DE69940756D1 - Methode zur Herstellung eines Kondensators in einer integrierten Schaltung - Google Patents

Methode zur Herstellung eines Kondensators in einer integrierten Schaltung

Info

Publication number
DE69940756D1
DE69940756D1 DE69940756T DE69940756T DE69940756D1 DE 69940756 D1 DE69940756 D1 DE 69940756D1 DE 69940756 T DE69940756 T DE 69940756T DE 69940756 T DE69940756 T DE 69940756T DE 69940756 D1 DE69940756 D1 DE 69940756D1
Authority
DE
Germany
Prior art keywords
capacitor
producing
integrated circuit
integrated
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69940756T
Other languages
English (en)
Inventor
Yvon Gris
Germaine Troillard
Jocelyne Mourier
Jos Guelen
Genevieve Lunardi
Henri Banvillet
Jean-Claude Oberlin
Catherine Maddalon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP BV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Application granted granted Critical
Publication of DE69940756D1 publication Critical patent/DE69940756D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)
DE69940756T 1998-07-21 1999-07-20 Methode zur Herstellung eines Kondensators in einer integrierten Schaltung Expired - Lifetime DE69940756D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9809437A FR2781603B1 (fr) 1998-07-21 1998-07-21 Procede de formation d'une capacite sur un circuit integre

Publications (1)

Publication Number Publication Date
DE69940756D1 true DE69940756D1 (de) 2009-06-04

Family

ID=9528954

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69940756T Expired - Lifetime DE69940756D1 (de) 1998-07-21 1999-07-20 Methode zur Herstellung eines Kondensators in einer integrierten Schaltung

Country Status (5)

Country Link
US (1) US6372570B1 (de)
EP (1) EP0975018B1 (de)
JP (1) JP2000049295A (de)
DE (1) DE69940756D1 (de)
FR (1) FR2781603B1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6180976B1 (en) * 1999-02-02 2001-01-30 Conexant Systems, Inc. Thin-film capacitors and methods for forming the same
DE10008573A1 (de) * 2000-02-24 2001-09-13 Infineon Technologies Ag Halbleiterbauelement und Herstellungsverfahren
FR2813145B1 (fr) * 2000-08-18 2002-11-29 St Microelectronics Sa Procede de fabrication d'un condensateur au sein d'un circuit integre, et circuit integre correspondant
DE10202697A1 (de) * 2002-01-24 2003-08-14 Infineon Technologies Dresden Verfahren zum Herstellen eines Kondensators in einer Dielektrikumschicht
WO2007030786A2 (en) * 2005-09-08 2007-03-15 Wms Gaming Inc. Gaming machine having positional expanding symbols
TWI405262B (zh) * 2007-07-17 2013-08-11 Creator Technology Bv 電子元件及電子元件之製法
US8388438B2 (en) * 2008-11-12 2013-03-05 Wms Gaming Inc. Wagering game providing suggestion for game feature to be achieved in subsequent play
US8957500B2 (en) 2012-10-10 2015-02-17 Nxp B.V. High-voltage integrated metal capacitor and fabrication method

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3163761B2 (ja) * 1992-06-10 2001-05-08 ヤマハ株式会社 集積回路装置
US5563762A (en) 1994-11-28 1996-10-08 Northern Telecom Limited Capacitor for an integrated circuit and method of formation thereof, and a method of adding on-chip capacitors to an integrated circuit
US6115233A (en) * 1996-06-28 2000-09-05 Lsi Logic Corporation Integrated circuit device having a capacitor with the dielectric peripheral region being greater than the dielectric central region
WO1998005071A1 (en) * 1996-07-26 1998-02-05 Symetrix Corporation Method of fabricating an integrated circuit using self-patterned thin films
US6242315B1 (en) * 1998-11-04 2001-06-05 United Microelectronics Corp. Method of manufacturing mixed mode semiconductor device
US6100195A (en) * 1998-12-28 2000-08-08 Chartered Semiconductor Manu. Ltd. Passivation of copper interconnect surfaces with a passivating metal layer

Also Published As

Publication number Publication date
JP2000049295A (ja) 2000-02-18
US6372570B1 (en) 2002-04-16
FR2781603A1 (fr) 2000-01-28
FR2781603B1 (fr) 2000-10-06
EP0975018B1 (de) 2009-04-22
EP0975018A1 (de) 2000-01-26

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Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: NXP B.V., EINDHOVEN, NL

8364 No opposition during term of opposition