DE69935967T2 - Verfahren zur herstellung von einem halbleiterbauelement mit einem bipolaren transistor - Google Patents
Verfahren zur herstellung von einem halbleiterbauelement mit einem bipolaren transistor Download PDFInfo
- Publication number
- DE69935967T2 DE69935967T2 DE69935967T DE69935967T DE69935967T2 DE 69935967 T2 DE69935967 T2 DE 69935967T2 DE 69935967 T DE69935967 T DE 69935967T DE 69935967 T DE69935967 T DE 69935967T DE 69935967 T2 DE69935967 T2 DE 69935967T2
- Authority
- DE
- Germany
- Prior art keywords
- mask
- electrically insulating
- layer
- polycrystalline
- insulating region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims description 39
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 238000000034 method Methods 0.000 claims description 41
- 238000005530 etching Methods 0.000 claims description 18
- 238000005498 polishing Methods 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 239000000126 substance Substances 0.000 description 8
- 238000000206 photolithography Methods 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000012777 electrically insulating material Substances 0.000 description 2
- 238000007521 mechanical polishing technique Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/01—Manufacture or treatment
- H10D10/051—Manufacture or treatment of vertical BJTs
- H10D10/054—Forming extrinsic base regions on silicon substrate after insulating device isolation in vertical BJTs having single crystalline emitter, collector or base regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/01—Manufacture or treatment
- H10D10/021—Manufacture or treatment of heterojunction BJTs [HBT]
Landscapes
- Bipolar Transistors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP98203054 | 1998-09-11 | ||
| EP98203054 | 1998-09-11 | ||
| PCT/EP1999/006416 WO2000016392A1 (en) | 1998-09-11 | 1999-08-31 | Method of manufacturing a semiconductor device with a bipolar transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69935967D1 DE69935967D1 (de) | 2007-06-14 |
| DE69935967T2 true DE69935967T2 (de) | 2008-01-10 |
Family
ID=8234106
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69935967T Expired - Lifetime DE69935967T2 (de) | 1998-09-11 | 1999-08-31 | Verfahren zur herstellung von einem halbleiterbauelement mit einem bipolaren transistor |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US6150224A (enExample) |
| EP (1) | EP1048066B1 (enExample) |
| JP (1) | JP2002525851A (enExample) |
| DE (1) | DE69935967T2 (enExample) |
| WO (1) | WO2000016392A1 (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1082758A2 (en) * | 1998-11-13 | 2001-03-14 | Koninklijke Philips Electronics N.V. | Method of manufacturing a semiconductor device comprising a bipolar transistor |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0378794A1 (en) * | 1989-01-18 | 1990-07-25 | International Business Machines Corporation | Vertical bipolar transistor structure and method of manufacturing |
| US5106767A (en) * | 1990-12-07 | 1992-04-21 | International Business Machines Corporation | Process for fabricating low capacitance bipolar junction transistor |
| US5117271A (en) * | 1990-12-07 | 1992-05-26 | International Business Machines Corporation | Low capacitance bipolar junction transistor and fabrication process therfor |
| JP2582519B2 (ja) * | 1992-07-13 | 1997-02-19 | インターナショナル・ビジネス・マシーンズ・コーポレイション | バイポーラ・トランジスタおよびその製造方法 |
| DE19609933A1 (de) * | 1996-03-14 | 1997-09-18 | Daimler Benz Ag | Verfahren zur Herstellung eines Heterobipolartransistors |
-
1999
- 1999-08-31 DE DE69935967T patent/DE69935967T2/de not_active Expired - Lifetime
- 1999-08-31 WO PCT/EP1999/006416 patent/WO2000016392A1/en not_active Ceased
- 1999-08-31 JP JP2000570829A patent/JP2002525851A/ja active Pending
- 1999-08-31 EP EP99969180A patent/EP1048066B1/en not_active Expired - Lifetime
- 1999-09-10 US US09/393,944 patent/US6150224A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP1048066B1 (en) | 2007-05-02 |
| DE69935967D1 (de) | 2007-06-14 |
| JP2002525851A (ja) | 2002-08-13 |
| EP1048066A1 (en) | 2000-11-02 |
| US6150224A (en) | 2000-11-21 |
| WO2000016392A1 (en) | 2000-03-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8327 | Change in the person/name/address of the patent owner |
Owner name: NXP B.V., EINDHOVEN, NL |
|
| 8328 | Change in the person/name/address of the agent |
Representative=s name: EISENFUEHR, SPEISER & PARTNER, 10178 BERLIN |