DE69934971D1 - Halbleiteranordnung mit kontakthöckern und verfahren zu ihrer herstellung - Google Patents

Halbleiteranordnung mit kontakthöckern und verfahren zu ihrer herstellung

Info

Publication number
DE69934971D1
DE69934971D1 DE69934971T DE69934971T DE69934971D1 DE 69934971 D1 DE69934971 D1 DE 69934971D1 DE 69934971 T DE69934971 T DE 69934971T DE 69934971 T DE69934971 T DE 69934971T DE 69934971 D1 DE69934971 D1 DE 69934971D1
Authority
DE
Germany
Prior art keywords
production
contact holes
semiconductor assembly
semiconductor
assembly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69934971T
Other languages
English (en)
Inventor
Takakazu Yano
Shigeru Morokawa
Takashi Masuda
Makoto Watanabe
Masayoshi Kikuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Citizen Holdings Co Ltd
Original Assignee
Citizen Watch Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Citizen Watch Co Ltd filed Critical Citizen Watch Co Ltd
Application granted granted Critical
Publication of DE69934971D1 publication Critical patent/DE69934971D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/03—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
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    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/13124—Aluminium [Al] as principal constituent
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    • H01L2924/01004—Beryllium [Be]
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    • H01L2924/01022—Titanium [Ti]
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    • H01L2924/01037—Rubidium [Rb]
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    • H01L2924/01049—Indium [In]
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    • H01L2924/01073—Tantalum [Ta]
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    • H01L2924/01078—Platinum [Pt]
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    • H01L2924/01079—Gold [Au]
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
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    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Wire Bonding (AREA)
  • Liquid Crystal (AREA)
DE69934971T 1998-02-25 1999-02-25 Halbleiteranordnung mit kontakthöckern und verfahren zu ihrer herstellung Expired - Fee Related DE69934971D1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP4314098 1998-02-25
JP28074798 1998-10-02
PCT/JP1999/000892 WO1999044228A1 (en) 1998-02-25 1999-02-25 Semiconductor device

Publications (1)

Publication Number Publication Date
DE69934971D1 true DE69934971D1 (de) 2007-03-15

Family

ID=26382892

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69934971T Expired - Fee Related DE69934971D1 (de) 1998-02-25 1999-02-25 Halbleiteranordnung mit kontakthöckern und verfahren zu ihrer herstellung

Country Status (9)

Country Link
US (1) US6583506B1 (de)
EP (1) EP1061570B1 (de)
JP (1) JP3442738B2 (de)
KR (1) KR100350936B1 (de)
CN (1) CN1148794C (de)
AU (1) AU2640499A (de)
BR (1) BR9908224A (de)
DE (1) DE69934971D1 (de)
WO (1) WO1999044228A1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003203940A (ja) * 2001-10-25 2003-07-18 Seiko Epson Corp 半導体チップ及び配線基板並びにこれらの製造方法、半導体ウエハ、半導体装置、回路基板並びに電子機器
TWI227556B (en) * 2003-07-15 2005-02-01 Advanced Semiconductor Eng Chip structure
DE102008042107A1 (de) * 2008-09-15 2010-03-18 Robert Bosch Gmbh Elektronisches Bauteil sowie Verfahren zu seiner Herstellung
EP2444999A4 (de) 2009-06-18 2012-11-14 Rohm Co Ltd Halbleiterbauelement
TW201203403A (en) * 2010-07-12 2012-01-16 Siliconware Precision Industries Co Ltd Semiconductor element and fabrication method thereof
CN103681696A (zh) 2013-12-24 2014-03-26 京东方科技集团股份有限公司 一种电极引出结构、阵列基板以及显示装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4188438A (en) * 1975-06-02 1980-02-12 National Semiconductor Corporation Antioxidant coating of copper parts for thermal compression gang bonding of semiconductive devices
JPS58115860A (ja) * 1981-12-29 1983-07-09 Fujitsu Ltd 半導体装置
US4661375A (en) 1985-04-22 1987-04-28 At&T Technologies, Inc. Method for increasing the height of solder bumps
US5134460A (en) 1986-08-11 1992-07-28 International Business Machines Corporation Aluminum bump, reworkable bump, and titanium nitride structure for tab bonding
JPH02285638A (ja) * 1989-04-27 1990-11-22 Toshiba Corp 半導体装置
JP2598328B2 (ja) * 1989-10-17 1997-04-09 三菱電機株式会社 半導体装置およびその製造方法
US5470787A (en) * 1994-05-02 1995-11-28 Motorola, Inc. Semiconductor device solder bump having intrinsic potential for forming an extended eutectic region and method for making and using the same
JPH09129648A (ja) * 1995-10-31 1997-05-16 Toshiba Corp 半導体素子およびその実装方法
JPH09330932A (ja) * 1996-06-10 1997-12-22 Matsushita Electric Ind Co Ltd バンプ形成体およびバンプ形成方法

Also Published As

Publication number Publication date
KR20010034539A (ko) 2001-04-25
US6583506B1 (en) 2003-06-24
CN1291348A (zh) 2001-04-11
WO1999044228A1 (en) 1999-09-02
JP3442738B2 (ja) 2003-09-02
BR9908224A (pt) 2000-10-24
EP1061570A4 (de) 2002-07-31
CN1148794C (zh) 2004-05-05
EP1061570A1 (de) 2000-12-20
EP1061570B1 (de) 2007-01-24
AU2640499A (en) 1999-09-15
KR100350936B1 (ko) 2002-08-30

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Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: CITIZEN HOLDINGS CO., LTD., NISHITOKYO, TOKIO/, JP

8339 Ceased/non-payment of the annual fee