DE69934362D1 - Verfahren zur nitridierung der gatter-oxydschicht von einem halbleiterbauelement - Google Patents

Verfahren zur nitridierung der gatter-oxydschicht von einem halbleiterbauelement

Info

Publication number
DE69934362D1
DE69934362D1 DE69934362T DE69934362T DE69934362D1 DE 69934362 D1 DE69934362 D1 DE 69934362D1 DE 69934362 T DE69934362 T DE 69934362T DE 69934362 T DE69934362 T DE 69934362T DE 69934362 D1 DE69934362 D1 DE 69934362D1
Authority
DE
Germany
Prior art keywords
nitriding
gate
semiconductor component
oxyde
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69934362T
Other languages
English (en)
Other versions
DE69934362T2 (de
Inventor
Daniel Bensahel
Yves Campidelli
Francois Martin
Caroline Hernandez
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
France Telecom SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA, France Telecom SA filed Critical Commissariat a lEnergie Atomique CEA
Application granted granted Critical
Publication of DE69934362D1 publication Critical patent/DE69934362D1/de
Publication of DE69934362T2 publication Critical patent/DE69934362T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28202—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28238—Making the insulator with sacrificial oxide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
    • H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DE69934362T 1998-02-18 1999-02-15 Verfahren zur nitridierung der gatter-oxydschicht von einem halbleiterbauelement Expired - Lifetime DE69934362T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR9801963 1998-02-18
FR9801963A FR2775120B1 (fr) 1998-02-18 1998-02-18 Procede de nitruration de la couche d'oxyde de grille d'un dispositif semiconducteur et dispositif obtenu
PCT/FR1999/000328 WO1999043023A1 (fr) 1998-02-18 1999-02-15 Procede de nitruration de la couche d'oxyde de grille d'un dispositif semiconducteur et dispositif obtenu

Publications (2)

Publication Number Publication Date
DE69934362D1 true DE69934362D1 (de) 2007-01-25
DE69934362T2 DE69934362T2 (de) 2008-01-10

Family

ID=9523101

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69934362T Expired - Lifetime DE69934362T2 (de) 1998-02-18 1999-02-15 Verfahren zur nitridierung der gatter-oxydschicht von einem halbleiterbauelement

Country Status (6)

Country Link
US (1) US6372581B1 (de)
EP (1) EP0976148B1 (de)
JP (1) JP2002510437A (de)
DE (1) DE69934362T2 (de)
FR (1) FR2775120B1 (de)
WO (1) WO1999043023A1 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2783530B1 (fr) 1998-09-21 2001-08-31 Commissariat Energie Atomique Procede de preparation, par nitruration, d'un substrat de silicium pour la formation d'une couche isolante mince
US6090707A (en) * 1999-09-02 2000-07-18 Micron Technology, Inc. Method of forming a conductive silicide layer on a silicon comprising substrate and method of forming a conductive silicide contact
JP2002190535A (ja) * 2000-12-21 2002-07-05 Mitsubishi Electric Corp 半導体装置及びその製造方法
US6893979B2 (en) * 2001-03-15 2005-05-17 International Business Machines Corporation Method for improved plasma nitridation of ultra thin gate dielectrics
US20030073255A1 (en) * 2001-10-12 2003-04-17 Sundar Narayanan Novel self monitoring process for ultra thin gate oxidation
KR100400323B1 (ko) * 2001-11-01 2003-10-01 주식회사 하이닉스반도체 반도체 소자의 시모스(ｃｍｏｓ) 및 그의 제조 방법
US7094707B1 (en) * 2002-05-13 2006-08-22 Cypress Semiconductor Corporation Method of forming nitrided oxide in a hot wall single wafer furnace
WO2004070796A2 (en) * 2003-02-04 2004-08-19 Applied Materials, Inc. Tailoring nitrogen profile in silicon oxynitride using rapid thermal annealing with ammonia under ultra-low pressure
US6949804B2 (en) * 2003-02-14 2005-09-27 Seiko Epson Corporation Semiconductor device with gate dielectric film having an oxide film and an oxynitride film
US7709403B2 (en) * 2003-10-09 2010-05-04 Panasonic Corporation Silicon carbide-oxide layered structure, production method thereof, and semiconductor device
US8987096B2 (en) * 2012-02-07 2015-03-24 United Microelectronics Corp. Semiconductor process
US10727055B2 (en) * 2017-02-10 2020-07-28 International Business Machines Corporation Method to increase the lithographic process window of extreme ultra violet negative tone development resists

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2937817B2 (ja) * 1995-08-01 1999-08-23 松下電子工業株式会社 半導体基板表面の酸化膜の形成方法及びｍｏｓ半導体デバイスの製造方法

Also Published As

Publication number Publication date
FR2775120A1 (fr) 1999-08-20
DE69934362T2 (de) 2008-01-10
US6372581B1 (en) 2002-04-16
WO1999043023A1 (fr) 1999-08-26
EP0976148A1 (de) 2000-02-02
FR2775120B1 (fr) 2000-04-07
EP0976148B1 (de) 2006-12-13
JP2002510437A (ja) 2002-04-02

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Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: COMMISSARIAT A L'ENERGIE ATOMIQUE, PARIS, FR

8328 Change in the person/name/address of the agent

Representative=s name: PATENTANWAELTE GESTHUYSEN, VON ROHR & EGGERT, 4512

8364 No opposition during term of opposition