DE69934220D1 - Unter druck kontaktiertes halbleiterbauelement - Google Patents
Unter druck kontaktiertes halbleiterbauelementInfo
- Publication number
- DE69934220D1 DE69934220D1 DE69934220T DE69934220T DE69934220D1 DE 69934220 D1 DE69934220 D1 DE 69934220D1 DE 69934220 T DE69934220 T DE 69934220T DE 69934220 T DE69934220 T DE 69934220T DE 69934220 D1 DE69934220 D1 DE 69934220D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor element
- under pressure
- pressure contacted
- contacted semiconductor
- under
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
- H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01042—Molybdenum [Mo]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01074—Tungsten [W]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thyristors (AREA)
- Die Bonding (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP1999/000120 WO2000042664A1 (fr) | 1999-01-18 | 1999-01-18 | Dispositif a semiconducteur colle par compression |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69934220D1 true DE69934220D1 (de) | 2007-01-11 |
DE69934220T2 DE69934220T2 (de) | 2007-10-04 |
Family
ID=14234722
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69934220T Expired - Lifetime DE69934220T2 (de) | 1999-01-18 | 1999-01-18 | Unter druck kontaktiertes halbleiterbauelement |
Country Status (5)
Country | Link |
---|---|
US (1) | US6303987B1 (de) |
EP (1) | EP1065730B1 (de) |
JP (1) | JP3571354B2 (de) |
DE (1) | DE69934220T2 (de) |
WO (1) | WO2000042664A1 (de) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102005054543A1 (de) * | 2005-11-14 | 2007-05-31 | Peter Köllensperger | Halbleiterschalter mit integrierter Ansteuerschaltung |
JP2012504963A (ja) | 2008-10-07 | 2012-03-01 | エルエス9・インコーポレイテッド | 脂肪アルデヒドを生産するための方法および組成物 |
KR20130100630A (ko) * | 2012-03-02 | 2013-09-11 | 삼성전자주식회사 | 전자 방출 소자 및 이를 포함한 엑스선 발생 장치 |
KR20140106291A (ko) * | 2013-02-26 | 2014-09-03 | 삼성전자주식회사 | 평판형 엑스선 발생기를 구비한 엑스선 영상 시스템, 엑스선 발생기 및 전자 방출소자 |
CN103346130B (zh) * | 2013-07-01 | 2015-11-11 | 株洲南车时代电气股份有限公司 | Gct门极绝缘座及门极组件 |
JP2015138835A (ja) * | 2014-01-21 | 2015-07-30 | 株式会社東芝 | 半導体装置 |
WO2015154908A1 (en) * | 2014-04-10 | 2015-10-15 | Abb Technology Ag | Turn-off power semiconductor device with improved centering and fixing of a gate ring, and method for manufacturing the same |
JP2016062983A (ja) * | 2014-09-16 | 2016-04-25 | 株式会社東芝 | 半導体装置 |
CN111933588B (zh) * | 2020-06-24 | 2022-04-29 | 株洲中车时代半导体有限公司 | 一种igct封装结构 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2705476A1 (de) * | 1977-02-10 | 1978-08-17 | Bbc Brown Boveri & Cie | Fluessigkeitsgekuehltes leistungs-halbleiterbauelement in scheibenzellenbauweise |
JPS5633886A (en) * | 1979-08-28 | 1981-04-04 | Mitsubishi Electric Corp | Light drive semiconductor device |
JP2868209B2 (ja) | 1985-08-05 | 1999-03-10 | 富士通株式会社 | マルチプロセッサ・システムにおけるメモリ保護装置 |
JPH0526773Y2 (de) * | 1985-08-12 | 1993-07-07 | ||
JPH0760893B2 (ja) * | 1989-11-06 | 1995-06-28 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
JPH04352457A (ja) * | 1991-05-30 | 1992-12-07 | Mitsubishi Electric Corp | 圧接型半導体装置及びその製造方法 |
US5371386A (en) * | 1992-04-28 | 1994-12-06 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device and method of assembling the same |
JP3153638B2 (ja) * | 1992-06-26 | 2001-04-09 | 三菱電機株式会社 | 圧接型半導体装置及びその製造方法並びに熱補償板 |
JP3469304B2 (ja) * | 1994-04-12 | 2003-11-25 | 三菱電機株式会社 | 半導体装置 |
JP3291977B2 (ja) * | 1995-05-31 | 2002-06-17 | 三菱電機株式会社 | 圧接型半導体素子及びその製造方法並びに圧接型半導体装置 |
JP3535341B2 (ja) * | 1997-03-24 | 2004-06-07 | 三菱電機株式会社 | 圧接型半導体装置 |
-
1999
- 1999-01-18 DE DE69934220T patent/DE69934220T2/de not_active Expired - Lifetime
- 1999-01-18 JP JP55392999A patent/JP3571354B2/ja not_active Expired - Lifetime
- 1999-01-18 EP EP99900329A patent/EP1065730B1/de not_active Expired - Lifetime
- 1999-01-18 WO PCT/JP1999/000120 patent/WO2000042664A1/ja active IP Right Grant
-
2000
- 2000-09-18 US US09/664,574 patent/US6303987B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP1065730A1 (de) | 2001-01-03 |
WO2000042664A1 (fr) | 2000-07-20 |
DE69934220T2 (de) | 2007-10-04 |
EP1065730A4 (de) | 2004-05-26 |
US6303987B1 (en) | 2001-10-16 |
JP3571354B2 (ja) | 2004-09-29 |
EP1065730B1 (de) | 2006-11-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE60025972D1 (de) | Druckreaktionsblock | |
JP2002504674A5 (ja) | 圧力センサ | |
DE50002168D1 (de) | Proportional-druckregelventil | |
DE60022019D1 (de) | Fluidventil | |
DE60022719D1 (de) | Halbleiterdruckwandler mit Filter | |
DE59911611D1 (de) | Druckmessgerät | |
ID28773A (id) | Penunjukan-tanah dengan tekanan-sama | |
NO20003985D0 (no) | Halvledende trykksensor | |
DE50000339D1 (de) | Drucksystem | |
DE60035580D1 (de) | Halbleiter | |
DE60002954D1 (de) | Filmartiger drucksensor | |
DE60121910D1 (de) | Drucksensor mit Halbleiter-Sensorchip | |
DE60030116D1 (de) | Einzelpositionsdruckmesser | |
DE69917943D1 (de) | Halbleiter-drucksensor | |
DK1096549T3 (da) | Holdeindretninger til substrater | |
DE59914223D1 (de) | Relativdrucksensor | |
DE50014915D1 (de) | Drucksensor | |
DE60017315D1 (de) | Thermisches Entspannungsventil | |
DE69934220D1 (de) | Unter druck kontaktiertes halbleiterbauelement | |
DE50003994D1 (de) | Proportional-druckregelventil | |
IT1307196B1 (it) | Dispositivo di comando per idropulitrici o simili | |
DE59911803D1 (de) | Druckventil | |
NO996559A (no) | Trykkforsterker | |
DE69820981D1 (de) | Halbleiterdrucksensor | |
DE50004643D1 (de) | Drucksteuergerät |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8320 | Willingness to grant licences declared (paragraph 23) |