DE69933930D1 - Vorrichtung und verfahren zum beeinflussen eines ladungsträgerstrahls - Google Patents

Vorrichtung und verfahren zum beeinflussen eines ladungsträgerstrahls

Info

Publication number
DE69933930D1
DE69933930D1 DE69933930T DE69933930T DE69933930D1 DE 69933930 D1 DE69933930 D1 DE 69933930D1 DE 69933930 T DE69933930 T DE 69933930T DE 69933930 T DE69933930 T DE 69933930T DE 69933930 D1 DE69933930 D1 DE 69933930D1
Authority
DE
Germany
Prior art keywords
influencing
charge
charge beam
beam beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69933930T
Other languages
English (en)
Inventor
Derek Aitken
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Superion Ltd
Original Assignee
Superion Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Superion Ltd filed Critical Superion Ltd
Application granted granted Critical
Publication of DE69933930D1 publication Critical patent/DE69933930D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J49/00—Particle spectrometers or separator tubes
    • H01J49/02—Details
    • H01J49/06—Electron- or ion-optical arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/05—Electron or ion-optical arrangements for separating electrons or ions according to their energy or mass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J49/00—Particle spectrometers or separator tubes
    • H01J49/26—Mass spectrometers or separator tubes
    • H01J49/28—Static spectrometers
    • H01J49/32—Static spectrometers using double focusing
    • H01J49/322—Static spectrometers using double focusing with a magnetic sector of 90 degrees, e.g. Mattauch-Herzog type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/05—Arrangements for energy or mass analysis
    • H01J2237/055—Arrangements for energy or mass analysis magnetic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/05—Arrangements for energy or mass analysis
    • H01J2237/057—Energy or mass filtering
DE69933930T 1998-06-19 1999-06-15 Vorrichtung und verfahren zum beeinflussen eines ladungsträgerstrahls Expired - Lifetime DE69933930D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB9813327.5A GB9813327D0 (en) 1998-06-19 1998-06-19 Apparatus and method relating to charged particles
PCT/GB1999/001879 WO1999066535A2 (en) 1998-06-19 1999-06-15 Apparatus and method relating to charged particles

Publications (1)

Publication Number Publication Date
DE69933930D1 true DE69933930D1 (de) 2006-12-21

Family

ID=10834093

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69933930T Expired - Lifetime DE69933930D1 (de) 1998-06-19 1999-06-15 Vorrichtung und verfahren zum beeinflussen eines ladungsträgerstrahls

Country Status (7)

Country Link
US (1) US6498348B2 (de)
EP (1) EP1090411B1 (de)
JP (1) JP4677099B2 (de)
AU (1) AU4378899A (de)
DE (1) DE69933930D1 (de)
GB (1) GB9813327D0 (de)
WO (1) WO1999066535A2 (de)

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KR100589243B1 (ko) * 2003-08-27 2006-06-15 엘지전자 주식회사 플라즈마 디스플레이 패널 및 그의 모듈
US20050061997A1 (en) * 2003-09-24 2005-03-24 Benveniste Victor M. Ion beam slit extraction with mass separation
EP1695038B1 (de) 2003-12-12 2013-02-13 Semequip, Inc. Steuerung des flusses von aus feststoffen sublimierten dämpfen
KR20050086196A (ko) * 2004-02-25 2005-08-30 엘지전자 주식회사 세탁기
US7902527B2 (en) * 2004-05-18 2011-03-08 Jiong Chen Apparatus and methods for ion beam implantation using ribbon and spot beams
US7462843B2 (en) * 2004-05-18 2008-12-09 Advanced Ion Bean Technology Inc. Apparatus and methods for ion beam implantation
US7675050B2 (en) * 2006-06-12 2010-03-09 Advanced Ion Beam Technology, Inc. Apparatus and method for ion beam implantation using ribbon and spot beams
US6903350B1 (en) * 2004-06-10 2005-06-07 Axcelis Technologies, Inc. Ion beam scanning systems and methods for improved ion implantation uniformity
WO2006060378A2 (en) * 2004-11-30 2006-06-08 Purser Kenneth H Broad energy-range ribbon ion beam collimation using a variable-gradient dipole
US7598594B2 (en) * 2004-12-20 2009-10-06 Electronics And Telecommunications Research Institute Wafer-scale microcolumn array using low temperature co-fired ceramic substrate
US7598505B2 (en) * 2005-03-08 2009-10-06 Axcelis Technologies, Inc. Multichannel ion gun
US7498572B2 (en) * 2005-09-14 2009-03-03 Nissin Ion Equipment Co., Ltd. Deflecting electromagnet and ion beam irradiating apparatus
US7507978B2 (en) * 2006-09-29 2009-03-24 Axcelis Technologies, Inc. Beam line architecture for ion implanter
US20080116390A1 (en) * 2006-11-17 2008-05-22 Pyramid Technical Consultants, Inc. Delivery of a Charged Particle Beam
US7888652B2 (en) * 2006-11-27 2011-02-15 Nissin Ion Equipment Co., Ltd. Ion implantation apparatus
WO2009039382A1 (en) 2007-09-21 2009-03-26 Semequip. Inc. Method for extending equipment uptime in ion implantation
US8642959B2 (en) 2007-10-29 2014-02-04 Micron Technology, Inc. Method and system of performing three-dimensional imaging using an electron microscope
US7915597B2 (en) * 2008-03-18 2011-03-29 Axcelis Technologies, Inc. Extraction electrode system for high current ion implanter
US8124946B2 (en) * 2008-06-25 2012-02-28 Axcelis Technologies Inc. Post-decel magnetic energy filter for ion implantation systems
GB2478265B (en) * 2008-09-03 2013-06-19 Superion Ltd Apparatus and method relating to the focusing of charged particles
WO2010030645A2 (en) * 2008-09-10 2010-03-18 Varian Semiconductor Equipment Associates, Inc. Techniques for manufacturing solar cells
US8263941B2 (en) * 2008-11-13 2012-09-11 Varian Semiconductor Equipment Associates, Inc. Mass analysis magnet for a ribbon beam
US8466431B2 (en) * 2009-02-12 2013-06-18 Varian Semiconductor Equipment Associates, Inc. Techniques for improving extracted ion beam quality using high-transparency electrodes
US9587292B2 (en) * 2009-10-01 2017-03-07 Advanced Applied Physics Solutions, Inc. Method and apparatus for isolating the radioisotope molybdenum-99
JP2011171009A (ja) * 2010-02-16 2011-09-01 Sii Nanotechnology Inc 集束イオンビーム装置
GB201011862D0 (en) * 2010-07-14 2010-09-01 Thermo Fisher Scient Bremen Ion detection arrangement
US8921802B2 (en) * 2011-03-17 2014-12-30 Nicholas R. White Mass analyzer apparatus and systems operative for focusing ribbon ion beams and for separating desired ion species from unwanted ion species in ribbon ion beams
US8513619B1 (en) * 2012-05-10 2013-08-20 Kla-Tencor Corporation Non-planar extractor structure for electron source
US9053893B2 (en) * 2013-03-14 2015-06-09 Schlumberger Technology Corporation Radiation generator having bi-polar electrodes
US9117617B2 (en) * 2013-06-24 2015-08-25 Agilent Technologies, Inc. Axial magnetic ion source and related ionization methods
US10321552B2 (en) * 2014-10-21 2019-06-11 Riken Undulator magnet array and undulator
US10176977B2 (en) 2014-12-12 2019-01-08 Agilent Technologies, Inc. Ion source for soft electron ionization and related systems and methods
US9870891B1 (en) * 2016-02-24 2018-01-16 Euclid Techlabs LLC High gradient permanent magnet elements for charged particle beamlines
US9905396B1 (en) * 2016-10-18 2018-02-27 Varian Semiconductor Equipment Associates, Inc. Curved post scan electrode
WO2018087593A1 (en) * 2016-11-11 2018-05-17 Nissin Ion Equipment Co., Ltd. Ion implanter
CN107864546B (zh) * 2017-10-31 2019-06-07 华中科技大学 一种回旋加速器的束流强度稳定调制装置
US11049691B2 (en) * 2017-12-21 2021-06-29 Varian Semiconductor Equipment Associates, Inc. Ion beam quality control using a movable mass resolving device
JP7201523B2 (ja) * 2018-06-07 2023-01-10 株式会社ニューフレアテクノロジー マルチ電子ビーム偏向器及びマルチビーム画像取得装置
US11037765B2 (en) * 2018-07-03 2021-06-15 Tokyo Electron Limited Resonant structure for electron cyclotron resonant (ECR) plasma ionization
CN111694045A (zh) * 2020-06-28 2020-09-22 核工业西南物理研究院 一种中性粒子分析器及分析电磁场和探测面的布置方法
US11574796B1 (en) 2021-07-21 2023-02-07 Applied Materials, Inc. Dual XY variable aperture in an ion implantation system

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JP4103016B2 (ja) * 1998-05-21 2008-06-18 株式会社 Ｓｅｎ−Ｓｈｉ・アクセリス カンパニー 傾斜ディセル装置とそのイオンビームの形成方法

Also Published As

Publication number Publication date
US6498348B2 (en) 2002-12-24
AU4378899A (en) 2000-01-05
JP4677099B2 (ja) 2011-04-27
US20020043621A1 (en) 2002-04-18
EP1090411A2 (de) 2001-04-11
GB9813327D0 (en) 1998-08-19
WO1999066535A2 (en) 1999-12-23
WO1999066535A3 (en) 2000-04-27
JP2002518809A (ja) 2002-06-25
EP1090411B1 (de) 2006-11-08

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Legal Events

Date Code Title Description
8332 No legal effect for de