DE69930439D1 - Elektrische Vorrichtung mit integriertem Flashspeicher - Google Patents

Elektrische Vorrichtung mit integriertem Flashspeicher

Info

Publication number
DE69930439D1
DE69930439D1 DE69930439T DE69930439T DE69930439D1 DE 69930439 D1 DE69930439 D1 DE 69930439D1 DE 69930439 T DE69930439 T DE 69930439T DE 69930439 T DE69930439 T DE 69930439T DE 69930439 D1 DE69930439 D1 DE 69930439D1
Authority
DE
Germany
Prior art keywords
flash memory
electrical device
integrated flash
integrated
electrical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69930439T
Other languages
English (en)
Other versions
DE69930439T2 (de
Inventor
Nobutsugu Odani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Semiconductor Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE69930439D1 publication Critical patent/DE69930439D1/de
Publication of DE69930439T2 publication Critical patent/DE69930439T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/005—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor comprising combined but independently operative RAM-ROM, RAM-PROM, RAM-EPROM cells
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/14—Error detection or correction of the data by redundancy in operation
    • G06F11/1402—Saving, restoring, recovering or retrying
    • G06F11/1415—Saving, restoring, recovering or retrying at system level
    • G06F11/1441—Resetting or repowering

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Quality & Reliability (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Read Only Memory (AREA)
  • Debugging And Monitoring (AREA)
  • Memory System (AREA)
DE69930439T 1998-09-28 1999-04-22 Elektrische Vorrichtung mit integriertem Flashspeicher Expired - Lifetime DE69930439T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP27323198 1998-09-28
JP27323198A JP4146006B2 (ja) 1998-09-28 1998-09-28 フラッシュメモリを有する電子機器

Publications (2)

Publication Number Publication Date
DE69930439D1 true DE69930439D1 (de) 2006-05-11
DE69930439T2 DE69930439T2 (de) 2006-08-17

Family

ID=17524957

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69930439T Expired - Lifetime DE69930439T2 (de) 1998-09-28 1999-04-22 Elektrische Vorrichtung mit integriertem Flashspeicher

Country Status (4)

Country Link
US (1) US6484270B1 (de)
EP (1) EP0990987B1 (de)
JP (1) JP4146006B2 (de)
DE (1) DE69930439T2 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3983969B2 (ja) 2000-03-08 2007-09-26 株式会社東芝 不揮発性半導体記憶装置
JP2002288999A (ja) * 2001-03-27 2002-10-04 Fujitsu Ltd 半導体メモリ
JP4049297B2 (ja) * 2001-06-11 2008-02-20 株式会社ルネサステクノロジ 半導体記憶装置
FI20035041A0 (fi) * 2003-03-31 2003-03-31 Nokia Corp Menetelmä tiedon tallentamiseksi muistiin, järjestelmä, elektroniikkalaite ja muistikortti
US20050050261A1 (en) * 2003-08-27 2005-03-03 Thomas Roehr High density flash memory with high speed cache data interface
KR100560851B1 (ko) * 2003-09-03 2006-03-17 주식회사 이온라이트 음이온 발생과 대기정화 기능을 갖는 삼파장 램프
TWI224259B (en) * 2003-09-08 2004-11-21 Via Tech Inc Method and related apparatus for clearing data in a memory device
US20050223126A1 (en) * 2004-03-31 2005-10-06 Chu Li W Buffer controller between memories and method for the same
US7177782B2 (en) * 2004-06-18 2007-02-13 Lenovo (Singapore) Pte. Ltd. Methods and arrangements for capturing runtime information
KR100643288B1 (ko) 2004-11-16 2006-11-10 삼성전자주식회사 플래시 메모리의 데이터 처리 장치 및 방법
KR100643287B1 (ko) 2004-11-19 2006-11-10 삼성전자주식회사 플래시 메모리의 데이터 처리 장치 및 방법
JP2006338370A (ja) * 2005-06-02 2006-12-14 Toshiba Corp メモリシステム
JP5162846B2 (ja) * 2005-07-29 2013-03-13 ソニー株式会社 記憶装置、コンピュータシステム、および記憶システム
JP2008047244A (ja) * 2006-08-18 2008-02-28 Toshiba Corp 半導体記憶装置、半導体装置、及びデータ書き込み方法
JP5049733B2 (ja) * 2007-10-17 2012-10-17 株式会社東芝 情報処理システム
KR100960627B1 (ko) 2008-02-22 2010-06-07 주식회사 셀픽 에프램을 캐시 메모리로 사용하는 플래시 메모리 장치
JP5002629B2 (ja) 2009-08-28 2012-08-15 株式会社東芝 メモリシステム
DE102009048144A1 (de) * 2009-10-02 2011-04-07 Giesecke & Devrient Gmbh Verfahren zum Schreiben von Datensätzen in einen nicht-flüchtigen Datenspeicher
US20110208898A1 (en) * 2010-02-23 2011-08-25 Samsung Electronics Co., Ltd. Storage device, computing system, and data management method
JP2017162363A (ja) * 2016-03-11 2017-09-14 株式会社エルイーテック Ｒｏｍへのアクセスに関する情報を管理する装置
KR20200092103A (ko) 2019-01-24 2020-08-03 삼성전자주식회사 복수의 컨트롤러를 포함하는 메모리 시스템

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1031992B1 (de) * 1989-04-13 2006-06-21 SanDisk Corporation EEprom-System mit Blocklöschung
JP2582487B2 (ja) * 1991-07-12 1997-02-19 インターナショナル・ビジネス・マシーンズ・コーポレイション 半導体メモリを用いた外部記憶システム及びその制御方法
US5359569A (en) * 1991-10-29 1994-10-25 Hitachi Ltd. Semiconductor memory
JP3328321B2 (ja) * 1992-06-22 2002-09-24 株式会社日立製作所 半導体記憶装置
US5351216A (en) * 1993-03-05 1994-09-27 Microchip Technology Incorporated Premature termination of microcontroller EEPROM write
US5488711A (en) * 1993-04-01 1996-01-30 Microchip Technology Incorporated Serial EEPROM device and associated method for reducing data load time using a page mode write cache
GB9307623D0 (en) * 1993-04-13 1993-06-02 Jonhig Ltd Data writing to eeprom
JPH08123717A (ja) * 1994-10-25 1996-05-17 Oki Electric Ind Co Ltd 半導体記憶装置
JPH08137763A (ja) * 1994-11-04 1996-05-31 Fujitsu Ltd フラッシュメモリ制御装置
US5978941A (en) * 1995-03-15 1999-11-02 Hitachi, Ltd. Semiconductor memory device having deterioration determining function
JPH08263361A (ja) * 1995-03-23 1996-10-11 Mitsubishi Electric Corp フラッシュメモリカード
JP3364356B2 (ja) * 1995-03-30 2003-01-08 富士通株式会社 メモリ書替え装置
US5768162A (en) * 1995-07-26 1998-06-16 Comptek Federal Systems, Inc. Data bus recorder
US6134628A (en) * 1998-01-30 2000-10-17 Ricoh Company, Ltd. Method and computer-based system for rewriting a nonvolatile rewritable memory

Also Published As

Publication number Publication date
US6484270B1 (en) 2002-11-19
EP0990987A2 (de) 2000-04-05
DE69930439T2 (de) 2006-08-17
JP4146006B2 (ja) 2008-09-03
EP0990987A3 (de) 2002-01-23
EP0990987B1 (de) 2006-03-22
JP2000099405A (ja) 2000-04-07

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: FUJITSU MICROELECTRONICS LTD., TOKYO, JP

8327 Change in the person/name/address of the patent owner

Owner name: FUJITSU SEMICONDUCTOR LTD., YOKOHAMA, KANAGAWA, JP

8328 Change in the person/name/address of the agent

Representative=s name: SEEGER SEEGER LINDNER PARTNERSCHAFT PATENTANWAELTE