DE69927854T2 - Verfahren zur herstellung eines siliziumkarbid-komposits - Google Patents

Verfahren zur herstellung eines siliziumkarbid-komposits Download PDF

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Publication number
DE69927854T2
DE69927854T2 DE69927854T DE69927854T DE69927854T2 DE 69927854 T2 DE69927854 T2 DE 69927854T2 DE 69927854 T DE69927854 T DE 69927854T DE 69927854 T DE69927854 T DE 69927854T DE 69927854 T2 DE69927854 T2 DE 69927854T2
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Prior art keywords
silicon
infiltrant
infiltration
silicon carbide
mass
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DE69927854T
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German (de)
English (en)
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DE69927854D1 (de
Inventor
Michael W. WAGGONER
R. Barry ROSSING
A. Michael RICHMOND
A. Michael AGHAJANIAN
L. Allyn MCCORMICK
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M Cubed Technologies Inc
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M Cubed Technologies Inc
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    • C22C32/0047—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents
    • C22C32/0052—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents only carbides
    • C22C32/0063—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents only carbides based on SiC
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  • Organic Chemistry (AREA)
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  • Structural Engineering (AREA)
  • Metallurgy (AREA)
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  • Inorganic Chemistry (AREA)
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  • Combustion & Propulsion (AREA)
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  • Thermal Sciences (AREA)
  • Ceramic Products (AREA)
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DE69927854T 1999-07-23 1999-07-23 Verfahren zur herstellung eines siliziumkarbid-komposits Expired - Lifetime DE69927854T2 (de)

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JP4261130B2 (ja) 2002-06-18 2009-04-30 株式会社東芝 シリコン／炭化ケイ素複合材料
US20030233977A1 (en) * 2002-06-20 2003-12-25 Yeshwanth Narendar Method for forming semiconductor processing components
JP3960933B2 (ja) * 2003-03-18 2007-08-15 日本碍子株式会社 高熱伝導性放熱材及びその製造方法
JP4552103B2 (ja) * 2003-04-21 2010-09-29 Ｔｏｔｏ株式会社 窒化珪素コンポジット、及び窒化珪素コンポジットの製造方法
JP4577639B2 (ja) * 2003-09-29 2010-11-10 Ｔｏｔｏ株式会社 シリコンセラミックスコンポジットおよびシリコンセラミックスコンポジットの製造方法
US7335331B1 (en) 2005-03-01 2008-02-26 Husnay Dana M Method for making ceramic plates
WO2007100698A2 (en) 2006-02-24 2007-09-07 M Cubed Technologies, Inc. Intermetallic-containing composite bodies, and methods for making same
JP5300493B2 (ja) * 2006-02-24 2013-09-25 エム キューブド テクノロジーズ， インコーポレイテッド 金属間化合物含有複合体、及びそれを製造するための方法
JP2009113477A (ja) 2007-10-15 2009-05-28 Taiheiyo Randamu Kk セラミックス成形体とその製造方法
JP5177793B2 (ja) * 2007-12-27 2013-04-10 独立行政法人物質・材料研究機構 炭化ケイ素の製造方法
JP6132586B2 (ja) * 2013-02-22 2017-05-24 株式会社フジコー ＳｉＣ成形体の製造方法
WO2014133068A1 (ja) * 2013-02-27 2014-09-04 京セラ株式会社 セラミック接合体および流路体
FR3008968B1 (fr) 2013-07-23 2016-12-09 Herakles Procede de fabrication de pieces en materiau composite par impregnation a basse temperature de fusion
US9123661B2 (en) 2013-08-07 2015-09-01 Lam Research Corporation Silicon containing confinement ring for plasma processing apparatus and method of forming thereof
DE102014216433A1 (de) * 2014-08-19 2016-02-25 Schunk Kohlenstofftechnik Gmbh Verfahren zur Herstellung eines Formkörpers sowie Formkörper
JP6489775B2 (ja) * 2014-08-21 2019-03-27 株式会社フジコー ＳｉＣ成形体の製造方法及びＳｉＣ成形体の加工方法
CN105349827A (zh) * 2015-10-30 2016-02-24 苏州列治埃盟新材料技术转移有限公司 一种碳化硅增强无铅锡铜合金棒及其制备方法
DE112017001938T5 (de) * 2016-04-06 2019-01-17 M Cubed Technologies, Inc. Diamantverbundwerkstoff-Konditionierer für ein CMP-Tuch
CN109748595B (zh) * 2017-11-01 2021-10-22 航天特种材料及工艺技术研究所 一种混合渗剂、用途及反应熔渗制备方法
IT202000030353A1 (it) * 2020-12-10 2022-06-10 Brembo Spa Pastiglia per freni a disco e relativo metodo di produzione
CN113185297B (zh) * 2021-04-27 2023-06-27 湖北中烟工业有限责任公司 电加热用陶瓷材料及其应用
CN114031415B (zh) * 2021-10-29 2022-08-02 中广核研究院有限公司 碳化硅接头及其金属渗透连接方法
CN114180967B (zh) * 2021-12-30 2023-01-31 浙江立泰复合材料股份有限公司 一种中空陶瓷材料及其制备方法
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CN1216830C (zh) 2005-08-31
DE69927854D1 (de) 2005-11-24
ATE307100T1 (de) 2005-11-15
CA2380288A1 (en) 2001-02-01
IL147600A0 (en) 2002-08-14
JP2003505329A (ja) 2003-02-12
KR20020073328A (ko) 2002-09-23
AU5318599A (en) 2001-02-13
WO2001007377A1 (en) 2001-02-01
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