DE69926634D1 - Profiliertes sputtertarget - Google Patents

Profiliertes sputtertarget

Info

Publication number
DE69926634D1
DE69926634D1 DE69926634T DE69926634T DE69926634D1 DE 69926634 D1 DE69926634 D1 DE 69926634D1 DE 69926634 T DE69926634 T DE 69926634T DE 69926634 T DE69926634 T DE 69926634T DE 69926634 D1 DE69926634 D1 DE 69926634D1
Authority
DE
Germany
Prior art keywords
profiled
sputter target
sputter
target
profiled sputter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69926634T
Other languages
English (en)
Other versions
DE69926634T2 (de
Inventor
S Gilman
Tetsuya Kojima
Chi-Fung Lo
Eiichi Shimizu
Hidemasa Tamura
Norio Yokoyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Praxair ST Technology Inc
Praxair Technology Inc
Original Assignee
Praxair ST Technology Inc
Praxair Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Praxair ST Technology Inc, Praxair Technology Inc filed Critical Praxair ST Technology Inc
Application granted granted Critical
Publication of DE69926634D1 publication Critical patent/DE69926634D1/de
Publication of DE69926634T2 publication Critical patent/DE69926634T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3423—Shape
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3491—Manufacturing of targets
DE69926634T 1998-06-01 1999-05-26 Profiliertes sputtertarget Expired - Lifetime DE69926634T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US88454 1998-06-01
US09/088,454 US6086735A (en) 1998-06-01 1998-06-01 Contoured sputtering target
PCT/US1999/011604 WO1999063128A1 (en) 1998-06-01 1999-05-26 Contoured sputtering target

Publications (2)

Publication Number Publication Date
DE69926634D1 true DE69926634D1 (de) 2005-09-15
DE69926634T2 DE69926634T2 (de) 2006-06-08

Family

ID=22211482

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69926634T Expired - Lifetime DE69926634T2 (de) 1998-06-01 1999-05-26 Profiliertes sputtertarget

Country Status (7)

Country Link
US (1) US6086735A (de)
EP (1) EP1092050B1 (de)
JP (1) JP3979787B2 (de)
KR (1) KR100761592B1 (de)
AU (1) AU4314399A (de)
DE (1) DE69926634T2 (de)
WO (1) WO1999063128A1 (de)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6858102B1 (en) * 2000-11-15 2005-02-22 Honeywell International Inc. Copper-containing sputtering targets, and methods of forming copper-containing sputtering targets
US6113761A (en) 1999-06-02 2000-09-05 Johnson Matthey Electronics, Inc. Copper sputtering target assembly and method of making same
KR20010050590A (ko) * 1999-09-23 2001-06-15 로버트 에이. 바쎄트 수명이 연장된 스퍼터 타깃
JP2003529206A (ja) 1999-11-24 2003-09-30 ハネウェル・インターナショナル・インコーポレーテッド 物理蒸着ターゲット、導電性集積回路金属合金相互接続配線、電気めっきアノード、集積回路における導電性相互接続配線として用いるための金属合金
US6497797B1 (en) 2000-08-21 2002-12-24 Honeywell International Inc. Methods of forming sputtering targets, and sputtering targets formed thereby
US6503380B1 (en) * 2000-10-13 2003-01-07 Honeywell International Inc. Physical vapor target constructions
KR100853743B1 (ko) * 2001-07-19 2008-08-25 허니웰 인터내셔널 인코포레이티드 스퍼터링 타겟, 스퍼터 리액터, 주조잉곳을 제조하는 방법및 금속제품을 제조하는 방법
US20040009087A1 (en) * 2002-07-10 2004-01-15 Wuwen Yi Physical vapor deposition targets, and methods of forming physical vapor deposition targets
KR20040057287A (ko) * 2002-12-26 2004-07-02 삼성전자주식회사 스퍼터링용 타겟
US6921470B2 (en) * 2003-02-13 2005-07-26 Cabot Corporation Method of forming metal blanks for sputtering targets
KR20060037247A (ko) * 2003-08-21 2006-05-03 허니웰 인터내셔널 인코포레이티드 Ｃｕ-함유 ＰＤⅤ 타겟과 그 제조방법
US7910218B2 (en) 2003-10-22 2011-03-22 Applied Materials, Inc. Cleaning and refurbishing chamber components having metal coatings
US7670436B2 (en) 2004-11-03 2010-03-02 Applied Materials, Inc. Support ring assembly
CN102230158B (zh) * 2004-11-17 2014-04-30 Jx日矿日石金属株式会社 溅射靶、溅射靶-背衬板组装体以及成膜装置
US8617672B2 (en) 2005-07-13 2013-12-31 Applied Materials, Inc. Localized surface annealing of components for substrate processing chambers
US7762114B2 (en) 2005-09-09 2010-07-27 Applied Materials, Inc. Flow-formed chamber component having a textured surface
US9127362B2 (en) 2005-10-31 2015-09-08 Applied Materials, Inc. Process kit and target for substrate processing chamber
US8647484B2 (en) 2005-11-25 2014-02-11 Applied Materials, Inc. Target for sputtering chamber
DE102006057386A1 (de) * 2006-12-04 2008-06-05 Uhde Gmbh Verfahren zum Beschichten von Substraten
US7981262B2 (en) 2007-01-29 2011-07-19 Applied Materials, Inc. Process kit for substrate processing chamber
US7942969B2 (en) 2007-05-30 2011-05-17 Applied Materials, Inc. Substrate cleaning chamber and components
US8968536B2 (en) 2007-06-18 2015-03-03 Applied Materials, Inc. Sputtering target having increased life and sputtering uniformity
US7901552B2 (en) * 2007-10-05 2011-03-08 Applied Materials, Inc. Sputtering target with grooves and intersecting channels
JP5364173B2 (ja) * 2011-01-26 2013-12-11 Ｊｘ日鉱日石金属株式会社 スパッタリングターゲット
TWI605142B (zh) * 2013-01-04 2017-11-11 塔沙Ｓｍｄ公司 具有增進的表面輪廓和改善的性能的矽濺射靶及製造其之方法
JP6539649B2 (ja) * 2013-07-09 2019-07-03 エリコン サーフェス ソリューションズ アーゲー、 プフェフィコン 電気絶縁層の反応スパッタ堆積用のターゲット
CN105934533B (zh) * 2014-01-21 2018-11-27 住友化学株式会社 溅射靶
WO2015178968A1 (en) * 2014-05-20 2015-11-26 Seagate Technology Llc Contoured target for sputtering
US10115573B2 (en) * 2014-10-14 2018-10-30 Applied Materials, Inc. Apparatus for high compressive stress film deposition to improve kit life
US9960023B2 (en) 2014-12-31 2018-05-01 Applied Materials, Inc. Methods and apparatus for nodule control in a titanium-tungsten target
JP6291122B1 (ja) * 2017-03-29 2018-03-14 住友化学株式会社 スパッタリングターゲット
US11244815B2 (en) * 2017-04-20 2022-02-08 Honeywell International Inc. Profiled sputtering target and method of making the same
US20180327897A1 (en) * 2017-05-12 2018-11-15 Applied Materials, Inc. Re-deposition free sputtering system

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE150482C (de) *
US3630881A (en) * 1970-01-22 1971-12-28 Ibm Cathode-target assembly for rf sputtering apparatus
DE2307649B2 (de) * 1973-02-16 1980-07-31 Robert Bosch Gmbh, 7000 Stuttgart Anordnung zum Aufstäuben verschiedener Materialien auf einem Substrat
DE3335623A1 (de) * 1983-09-30 1985-04-11 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung einer kohlenstoff enthaltenden schicht, kohlenstoff enthaltende schicht, verwendung einer kohlenstoff enthaltenden schicht und vorrichtung zur durchfuehrung eines verfahrens zur herstellung einer kohlenstoff enthaltenden schicht
JPH0715144B2 (ja) * 1985-08-08 1995-02-22 松下電器産業株式会社 スパツタリングタ−ゲツト材
JPS6314865A (ja) * 1986-07-07 1988-01-22 Matsushita Electric Ind Co Ltd スパツタリング装置
JPS63105968A (ja) * 1986-10-21 1988-05-11 Seiko Epson Corp スパツタ電極
JPS63153266A (ja) * 1986-12-15 1988-06-25 Tokuda Seisakusho Ltd スパツタ装置
DE69129081T2 (de) * 1990-01-29 1998-07-02 Varian Associates Gerät und Verfahren zur Niederschlagung durch einen Kollimator
CA2098725A1 (en) * 1991-01-28 1992-07-29 Daniel R. Marx Target for cathode sputtering
EP0625792B1 (de) * 1993-05-19 1997-05-28 Applied Materials, Inc. Vorrichtung und Verfahren zur Erhöhung der Zerstäubungsrate in einem Zerstäubungsgerät
JP3852967B2 (ja) * 1995-07-14 2006-12-06 株式会社アルバック 低圧スパッタリング装置
US5658442A (en) * 1996-03-07 1997-08-19 Applied Materials, Inc. Target and dark space shield for a physical vapor deposition system
US5914018A (en) * 1996-08-23 1999-06-22 Applied Materials, Inc. Sputter target for eliminating redeposition on the target sidewall

Also Published As

Publication number Publication date
WO1999063128A1 (en) 1999-12-09
DE69926634T2 (de) 2006-06-08
EP1092050B1 (de) 2005-08-10
EP1092050A4 (de) 2004-06-09
US6086735A (en) 2000-07-11
KR100761592B1 (ko) 2007-09-27
JP3979787B2 (ja) 2007-09-19
AU4314399A (en) 1999-12-20
JP2002517610A (ja) 2002-06-18
EP1092050A1 (de) 2001-04-18
KR20010043955A (ko) 2001-05-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition