DE69920662D1 - Sibe-kristall - Google Patents

Sibe-kristall

Info

Publication number
DE69920662D1
DE69920662D1 DE69920662T DE69920662T DE69920662D1 DE 69920662 D1 DE69920662 D1 DE 69920662D1 DE 69920662 T DE69920662 T DE 69920662T DE 69920662 T DE69920662 T DE 69920662T DE 69920662 D1 DE69920662 D1 DE 69920662D1
Authority
DE
Germany
Prior art keywords
sibe
crystal
sibe crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69920662T
Other languages
English (en)
Other versions
DE69920662T2 (de
Inventor
Takao Abe
Ichiro Yonenaga
Tetsuya Igarashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Application granted granted Critical
Publication of DE69920662D1 publication Critical patent/DE69920662D1/de
Publication of DE69920662T2 publication Critical patent/DE69920662T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/52—Alloys
DE69920662T 1998-11-26 1999-11-05 Sibe-kristall Expired - Fee Related DE69920662T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP33589498 1998-11-26
JP33589498 1998-11-26
PCT/JP1999/006168 WO2000030975A1 (fr) 1998-11-26 1999-11-05 CRISTAL SiGe

Publications (2)

Publication Number Publication Date
DE69920662D1 true DE69920662D1 (de) 2004-11-04
DE69920662T2 DE69920662T2 (de) 2005-02-10

Family

ID=18293571

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69920662T Expired - Fee Related DE69920662T2 (de) 1998-11-26 1999-11-05 Sibe-kristall

Country Status (8)

Country Link
US (1) US6498288B1 (de)
EP (1) EP1052222B1 (de)
JP (1) JP3975676B2 (de)
KR (1) KR100654486B1 (de)
CN (1) CN1130308C (de)
DE (1) DE69920662T2 (de)
RU (1) RU2206643C2 (de)
WO (1) WO2000030975A1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002094131A (ja) * 2000-09-13 2002-03-29 Sumitomo Special Metals Co Ltd 熱電変換素子
CN100459202C (zh) * 2007-07-02 2009-02-04 北京科技大学 一种硅锗系热电材料的制备方法
WO2021002221A1 (ja) * 2019-07-03 2021-01-07 住友電気工業株式会社 熱電変換材料、熱電変換素子、熱電変換モジュールおよび光センサ
RU2739887C1 (ru) * 2020-05-06 2020-12-29 Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский Нижегородский государственный университет им. Н.И. Лобачевского" СПОСОБ ПОЛУЧЕНИЯ ТЕРМОЭЛЕКТРИЧЕСКОГО МАТЕРИАЛА n-ТИПА ПРОВОДИМОСТИ НА ОСНОВЕ ТВЕРДОГО РАСТВОРА Gex-δSi1-xSbδ ПРИ х=0,26-0,36, δ=0,008-0,01

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8431071D0 (en) * 1984-12-08 1985-01-16 Univ Glasgow Alloys
JP2686928B2 (ja) * 1985-08-26 1997-12-08 アンリツ株式会社 シリコン・ゲルマニウム混晶薄膜導電体
JPH04285096A (ja) * 1991-03-12 1992-10-09 Nec Corp Ｓｉ−Ｇｅ単結晶育成法
JP3313412B2 (ja) * 1992-07-07 2002-08-12 徳三 助川 半導体結晶の製造方法および装置
JPH07321323A (ja) * 1994-05-24 1995-12-08 Matsushita Electric Ind Co Ltd 薄膜トランジスタおよびその製造方法

Also Published As

Publication number Publication date
DE69920662T2 (de) 2005-02-10
RU2206643C2 (ru) 2003-06-20
EP1052222B1 (de) 2004-09-29
WO2000030975A1 (fr) 2000-06-02
CN1288443A (zh) 2001-03-21
EP1052222A4 (de) 2002-02-13
KR100654486B1 (ko) 2006-12-05
KR20010033781A (ko) 2001-04-25
CN1130308C (zh) 2003-12-10
EP1052222A1 (de) 2000-11-15
JP3975676B2 (ja) 2007-09-12
US6498288B1 (en) 2002-12-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee