DE69913940D1 - Nichtflüchtiger speicher mit verbesserter leseanordnung sowie zugehöriges verfahren - Google Patents

Nichtflüchtiger speicher mit verbesserter leseanordnung sowie zugehöriges verfahren

Info

Publication number
DE69913940D1
DE69913940D1 DE69913940T DE69913940T DE69913940D1 DE 69913940 D1 DE69913940 D1 DE 69913940D1 DE 69913940 T DE69913940 T DE 69913940T DE 69913940 T DE69913940 T DE 69913940T DE 69913940 D1 DE69913940 D1 DE 69913940D1
Authority
DE
Germany
Prior art keywords
sensing
current
improved
memory state
cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69913940T
Other languages
English (en)
Inventor
Raul-Adrian Cernea
Rushyah Tang
Douglas Lee
Chi-Ming Wang
Daniel Guterman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SanDisk Corp
Original Assignee
SanDisk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SanDisk Corp filed Critical SanDisk Corp
Application granted granted Critical
Publication of DE69913940D1 publication Critical patent/DE69913940D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/32—Timing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/564—Miscellaneous aspects
    • G11C2211/5644—Multilevel memory comprising counting devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/564—Miscellaneous aspects
    • G11C2211/5645—Multilevel memory with current-mirror arrangements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/04—Arrangements for selecting an address in a digital store using a sequential addressing device, e.g. shift register, counter

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Measuring Or Testing Involving Enzymes Or Micro-Organisms (AREA)
  • Catching Or Destruction (AREA)
  • Road Signs Or Road Markings (AREA)
  • Cosmetics (AREA)
DE69913940T 1998-10-23 1999-10-20 Nichtflüchtiger speicher mit verbesserter leseanordnung sowie zugehöriges verfahren Expired - Lifetime DE69913940D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/177,809 US6044019A (en) 1998-10-23 1998-10-23 Non-volatile memory with improved sensing and method therefor
PCT/US1999/024555 WO2000025318A1 (en) 1998-10-23 1999-10-20 Non-volatile memory with improved sensing and method therefor

Publications (1)

Publication Number Publication Date
DE69913940D1 true DE69913940D1 (de) 2004-02-05

Family

ID=22650060

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69913940T Expired - Lifetime DE69913940D1 (de) 1998-10-23 1999-10-20 Nichtflüchtiger speicher mit verbesserter leseanordnung sowie zugehöriges verfahren

Country Status (7)

Country Link
US (2) US6044019A (de)
EP (1) EP1050052B1 (de)
JP (1) JP4469087B2 (de)
AT (1) ATE257271T1 (de)
AU (1) AU1214600A (de)
DE (1) DE69913940D1 (de)
WO (1) WO2000025318A1 (de)

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Also Published As

Publication number Publication date
WO2000025318A1 (en) 2000-05-04
ATE257271T1 (de) 2004-01-15
JP4469087B2 (ja) 2010-05-26
AU1214600A (en) 2000-05-15
US6044019A (en) 2000-03-28
EP1050052A1 (de) 2000-11-08
EP1050052B1 (de) 2004-01-02
JP2002528845A (ja) 2002-09-03
US6282120B1 (en) 2001-08-28

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