DE69906209D1 - GaAs-Einkristallinesubstrat und Epitaxialescheibe, die dieses Substrat verwendet - Google Patents
GaAs-Einkristallinesubstrat und Epitaxialescheibe, die dieses Substrat verwendetInfo
- Publication number
- DE69906209D1 DE69906209D1 DE69906209T DE69906209T DE69906209D1 DE 69906209 D1 DE69906209 D1 DE 69906209D1 DE 69906209 T DE69906209 T DE 69906209T DE 69906209 T DE69906209 T DE 69906209T DE 69906209 D1 DE69906209 D1 DE 69906209D1
- Authority
- DE
- Germany
- Prior art keywords
- substrate
- epitaxial wafer
- single crystalline
- gaas single
- crystalline substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/42—Gallium arsenide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02395—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02463—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
- Y10T428/264—Up to 3 mils
- Y10T428/265—1 mil or less
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10273097A JP2967780B1 (ja) | 1998-09-28 | 1998-09-28 | GaAs単結晶基板およびそれを用いたエピタキシャルウェハ |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69906209D1 true DE69906209D1 (de) | 2003-04-30 |
DE69906209T2 DE69906209T2 (de) | 2003-09-25 |
Family
ID=17523106
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69906209T Expired - Lifetime DE69906209T2 (de) | 1998-09-28 | 1999-07-07 | GaAs-Einkristallinesubstrat und Epitaxialescheibe, die dieses Substrat verwendet |
Country Status (7)
Country | Link |
---|---|
US (1) | US6180269B1 (de) |
EP (1) | EP0990717B1 (de) |
JP (1) | JP2967780B1 (de) |
CN (2) | CN101451265B (de) |
CA (1) | CA2275088C (de) |
DE (1) | DE69906209T2 (de) |
TW (1) | TW473563B (de) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006060177A (ja) * | 2004-08-24 | 2006-03-02 | Sumitomo Chemical Co Ltd | pn接合を有する化合物半導体エピタキシャル基板の製造方法 |
JP4843929B2 (ja) * | 2004-10-21 | 2011-12-21 | 住友電気工業株式会社 | GaAs結晶の熱処理方法およびGaAs結晶基板 |
DE102005030851A1 (de) * | 2005-07-01 | 2007-01-04 | Freiberger Compound Materials Gmbh | Vorrichtung und Verfahren zum Tempern von III-V-Wafern sowie getemperte III-V-Halbleitereinkristallwafer |
EP1739213B1 (de) * | 2005-07-01 | 2011-04-13 | Freiberger Compound Materials GmbH | Vorrichtung und Verfahren zum Tempern von III-V-Wafern sowie getemperte III-V-Halbleitereinkristallwafer |
US8736003B2 (en) * | 2009-12-18 | 2014-05-27 | Allegro Microsystems, Llc | Integrated hybrid hall effect transducer |
JP2011219362A (ja) * | 2011-07-25 | 2011-11-04 | Sumitomo Electric Ind Ltd | GaAs結晶基板 |
JP6110886B2 (ja) * | 2014-06-17 | 2017-04-05 | 旭化成エレクトロニクス株式会社 | ホールセンサ |
CN107195772B (zh) * | 2014-06-17 | 2019-06-25 | 旭化成微电子株式会社 | 霍尔传感器 |
EP3508621A4 (de) * | 2017-07-04 | 2020-04-22 | Sumitomo Electric Industries, Ltd. | Galliumarsenid-kristallkörper und galliumarsenid-kristallsubstrat |
JPWO2019053856A1 (ja) * | 2017-09-14 | 2019-11-07 | 住友電気工業株式会社 | ヒ化ガリウム系化合物半導体結晶およびウエハ群 |
EP3604633B1 (de) | 2017-09-21 | 2024-02-21 | Sumitomo Electric Industries, Ltd. | Halbisolierendes galliumarsenidkristallsubstrat |
JP6900967B2 (ja) * | 2017-09-21 | 2021-07-14 | 住友電気工業株式会社 | 半絶縁性ヒ化ガリウム結晶基板 |
US11456363B2 (en) | 2018-02-23 | 2022-09-27 | Sumitomo Electric Industries, Ltd. | Indium phosphide crystal substrate |
EP3757261A4 (de) * | 2018-02-23 | 2021-11-03 | Sumitomo Electric Industries, Ltd. | Galliumarsenidkristallsubstrat |
US20210079556A1 (en) * | 2018-08-07 | 2021-03-18 | Sumitomo Electric Industries, Ltd. | Gallium arsenide single crystal and gallium arsenide single crystal substrate |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60137899A (ja) * | 1983-12-23 | 1985-07-22 | Sumitomo Electric Ind Ltd | 砒化ガリウム単結晶とその製造方法 |
JPS6454724A (en) | 1987-08-26 | 1989-03-02 | Hitachi Cable | Semi-insulating gaas single crystal wafer |
US5229637A (en) | 1988-03-14 | 1993-07-20 | Kabushiki Kaisha Toshiba | Semiconductor device |
WO1990000314A2 (en) * | 1988-07-02 | 1990-01-11 | The University Of Liverpool | Method of activation of superconductors and devices produced thereby |
JPH0238400A (ja) | 1988-07-28 | 1990-02-07 | Sumitomo Metal Mining Co Ltd | 半絶縁性GaAs単結晶およびその製造方法 |
JPH08102563A (ja) * | 1994-08-02 | 1996-04-16 | Toshiba Corp | 半導体ホール素子 |
JP3201305B2 (ja) | 1996-04-26 | 2001-08-20 | 住友電気工業株式会社 | Iii−v族化合物半導体結晶の製造方法 |
JP4135239B2 (ja) | 1997-12-26 | 2008-08-20 | 住友電気工業株式会社 | 半導体結晶およびその製造方法ならびに製造装置 |
-
1998
- 1998-09-28 JP JP10273097A patent/JP2967780B1/ja not_active Expired - Lifetime
-
1999
- 1999-06-15 CA CA002275088A patent/CA2275088C/en not_active Expired - Fee Related
- 1999-06-16 US US09/334,215 patent/US6180269B1/en not_active Expired - Lifetime
- 1999-07-07 EP EP99113143A patent/EP0990717B1/de not_active Expired - Lifetime
- 1999-07-07 DE DE69906209T patent/DE69906209T2/de not_active Expired - Lifetime
- 1999-08-18 CN CN2008101694086A patent/CN101451265B/zh not_active Expired - Lifetime
- 1999-08-18 CN CN991179250A patent/CN1249368B/zh not_active Expired - Fee Related
- 1999-09-17 TW TW088116112A patent/TW473563B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
CA2275088A1 (en) | 2000-03-28 |
CN101451265A (zh) | 2009-06-10 |
US6180269B1 (en) | 2001-01-30 |
CN101451265B (zh) | 2013-03-27 |
JP2000103699A (ja) | 2000-04-11 |
EP0990717A1 (de) | 2000-04-05 |
TW473563B (en) | 2002-01-21 |
JP2967780B1 (ja) | 1999-10-25 |
EP0990717B1 (de) | 2003-03-26 |
CN1249368A (zh) | 2000-04-05 |
CA2275088C (en) | 2002-08-27 |
DE69906209T2 (de) | 2003-09-25 |
CN1249368B (zh) | 2011-08-17 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8363 | Opposition against the patent |