JPS6454724A - Semi-insulating gaas single crystal wafer - Google Patents

Semi-insulating gaas single crystal wafer

Info

Publication number
JPS6454724A
JPS6454724A JP21162187A JP21162187A JPS6454724A JP S6454724 A JPS6454724 A JP S6454724A JP 21162187 A JP21162187 A JP 21162187A JP 21162187 A JP21162187 A JP 21162187A JP S6454724 A JPS6454724 A JP S6454724A
Authority
JP
Japan
Prior art keywords
concentration
semi
single crystal
crystal wafer
gaas single
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21162187A
Other languages
Japanese (ja)
Inventor
Tadaitsu Tsuchiya
Ryuichi Nakazono
Youhei Otoki
Shoji Kuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Cable Ltd
Original Assignee
Hitachi Cable Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Cable Ltd filed Critical Hitachi Cable Ltd
Priority to JP21162187A priority Critical patent/JPS6454724A/en
Publication of JPS6454724A publication Critical patent/JPS6454724A/en
Pending legal-status Critical Current

Links

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To attain a high activation rate and high insulating properties by respectively bringing carbon concentration and the concentration of a deep donor level EL2 to specified values or less. CONSTITUTION:The carbon concentration of a semi-insulating GaAs single crystal wafer is brought to 2X10<15>cm<-1> or less while the concentration of a deep donor level EL2 is brought to 1X10<16>cm<-1> or less. When carbon concentration is reduced, an activation rate is improved but resistivity is lowered simultaneously.On the other hand, resistivity increases by the reduction of the concentration of the deep donor level EL2. Accordingly, the wafer excellent both in the activation rate and resistivity is acquired by regulating both concentration.
JP21162187A 1987-08-26 1987-08-26 Semi-insulating gaas single crystal wafer Pending JPS6454724A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21162187A JPS6454724A (en) 1987-08-26 1987-08-26 Semi-insulating gaas single crystal wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21162187A JPS6454724A (en) 1987-08-26 1987-08-26 Semi-insulating gaas single crystal wafer

Publications (1)

Publication Number Publication Date
JPS6454724A true JPS6454724A (en) 1989-03-02

Family

ID=16608799

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21162187A Pending JPS6454724A (en) 1987-08-26 1987-08-26 Semi-insulating gaas single crystal wafer

Country Status (1)

Country Link
JP (1) JPS6454724A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0990717A1 (en) * 1998-09-28 2000-04-05 Sumitomo Electric Industries, Ltd. GaAs single crystal substrate and epitaxial wafer using the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0990717A1 (en) * 1998-09-28 2000-04-05 Sumitomo Electric Industries, Ltd. GaAs single crystal substrate and epitaxial wafer using the same
US6180269B1 (en) 1998-09-28 2001-01-30 Sumitomo Electric Industries, Ltd. GaAs single crystal substrate and epitaxial wafer using the same

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