DE69902553D1 - Verwendung des zeta-potentials während des chemisch-mechanischen polierens zur endpunktbestimmung - Google Patents

Verwendung des zeta-potentials während des chemisch-mechanischen polierens zur endpunktbestimmung

Info

Publication number
DE69902553D1
DE69902553D1 DE69902553T DE69902553T DE69902553D1 DE 69902553 D1 DE69902553 D1 DE 69902553D1 DE 69902553 T DE69902553 T DE 69902553T DE 69902553 T DE69902553 T DE 69902553T DE 69902553 D1 DE69902553 D1 DE 69902553D1
Authority
DE
Germany
Prior art keywords
change
polishing
fluid pressure
zeta potential
shear force
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69902553T
Other languages
English (en)
Other versions
DE69902553T2 (de
Inventor
C Krusell
J Nagengast
K Pant
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of DE69902553D1 publication Critical patent/DE69902553D1/de
Application granted granted Critical
Publication of DE69902553T2 publication Critical patent/DE69902553T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/013—Devices or means for detecting lapping completion
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B21/00—Machines or devices using grinding or polishing belts; Accessories therefor
    • B24B21/04—Machines or devices using grinding or polishing belts; Accessories therefor for grinding plane surfaces
    • B24B21/06—Machines or devices using grinding or polishing belts; Accessories therefor for grinding plane surfaces involving members with limited contact area pressing the belt against the work, e.g. shoes sweeping across the whole area to be ground
    • B24B21/08—Pressure shoes; Pressure members, e.g. backing belts
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/16—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the load
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/32—Polishing; Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Weting (AREA)
DE69902553T 1998-10-29 1999-10-13 Verwendung des zeta-potentials während des chemisch-mechanischen polierens zur endpunktbestimmung Expired - Fee Related DE69902553T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/182,570 US6325706B1 (en) 1998-10-29 1998-10-29 Use of zeta potential during chemical mechanical polishing for end point detection
PCT/US1999/023662 WO2000025983A1 (en) 1998-10-29 1999-10-13 Use of zeta potential during chemical mechanical polishing for end point detection

Publications (2)

Publication Number Publication Date
DE69902553D1 true DE69902553D1 (de) 2002-09-19
DE69902553T2 DE69902553T2 (de) 2003-04-24

Family

ID=22669046

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69902553T Expired - Fee Related DE69902553T2 (de) 1998-10-29 1999-10-13 Verwendung des zeta-potentials während des chemisch-mechanischen polierens zur endpunktbestimmung

Country Status (9)

Country Link
US (1) US6325706B1 (de)
EP (1) EP1124666B1 (de)
JP (1) JP2002528928A (de)
KR (1) KR100637568B1 (de)
AT (1) ATE222158T1 (de)
AU (1) AU6297799A (de)
DE (1) DE69902553T2 (de)
TW (1) TW445535B (de)
WO (1) WO2000025983A1 (de)

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JP3702668B2 (ja) * 1998-09-28 2005-10-05 株式会社村田製作所 電子部品チップ供給装置
US6492273B1 (en) 1999-08-31 2002-12-10 Micron Technology, Inc. Methods and apparatuses for monitoring and controlling mechanical or chemical-mechanical planarization of microelectronic substrate assemblies
US6375540B1 (en) * 2000-06-30 2002-04-23 Lam Research Corporation End-point detection system for chemical mechanical posing applications
US6520833B1 (en) * 2000-06-30 2003-02-18 Lam Research Corporation Oscillating fixed abrasive CMP system and methods for implementing the same
US6520834B1 (en) * 2000-08-09 2003-02-18 Micron Technology, Inc. Methods and apparatuses for analyzing and controlling performance parameters in mechanical and chemical-mechanical planarization of microelectronic substrates
US6439978B1 (en) * 2000-09-07 2002-08-27 Oliver Design, Inc. Substrate polishing system using roll-to-roll fixed abrasive
US6607425B1 (en) * 2000-12-21 2003-08-19 Lam Research Corporation Pressurized membrane platen design for improving performance in CMP applications
WO2003002301A1 (en) * 2001-06-26 2003-01-09 Lam Research Corporation End point detection system for chemical mechanical polishing applications
US6656024B1 (en) * 2001-12-21 2003-12-02 Lam Research Corporation Method and apparatus for reducing compressed dry air usage during chemical mechanical planarization
US6653202B1 (en) * 2003-01-17 2003-11-25 Advanced Micro Devices, Inc. Method of shallow trench isolation (STI) formation using amorphous carbon
DE10325406B4 (de) * 2003-06-05 2005-04-28 Eads Deutschland Gmbh Schadensermittlung an zu prüfenden Strukturen mittels Ultraschall
US20050118932A1 (en) * 2003-07-03 2005-06-02 Homayoun Talieh Adjustable gap chemical mechanical polishing method and apparatus
US6955588B1 (en) * 2004-03-31 2005-10-18 Lam Research Corporation Method of and platen for controlling removal rate characteristics in chemical mechanical planarization
US7120553B2 (en) * 2004-07-22 2006-10-10 Applied Materials, Inc. Iso-reflectance wavelengths
US7153182B1 (en) * 2004-09-30 2006-12-26 Lam Research Corporation System and method for in situ characterization and maintenance of polishing pad smoothness in chemical mechanical polishing
DE102004054920B4 (de) * 2004-11-09 2008-01-31 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Bauteil und Vorrichtung zur Steuerung von physikalischen Parametern mit mindestens einem Bauteil
DE102006018276A1 (de) * 2006-04-20 2007-10-31 Conti Temic Microelectronic Gmbh Verfahren und Vorrichtung zur Schliffpräparation eines mehrere ebene und zueinander parallel verlaufende Schichten unterschiedlichen Materials aufweisenden Probenkörpers
US9696710B2 (en) * 2009-11-05 2017-07-04 Vibration Technologies, Llc Method and system for measuring the dynamic response of a structure during a machining process
JP5819076B2 (ja) * 2010-03-10 2015-11-18 株式会社フジミインコーポレーテッド 研磨用組成物
US20130017762A1 (en) * 2011-07-15 2013-01-17 Infineon Technologies Ag Method and Apparatus for Determining a Measure of a Thickness of a Polishing Pad of a Polishing Machine
US9259821B2 (en) 2014-06-25 2016-02-16 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing layer formulation with conditioning tolerance
US9873180B2 (en) 2014-10-17 2018-01-23 Applied Materials, Inc. CMP pad construction with composite material properties using additive manufacturing processes
SG10202002601QA (en) 2014-10-17 2020-05-28 Applied Materials Inc Cmp pad construction with composite material properties using additive manufacturing processes
US10875153B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Advanced polishing pad materials and formulations
US11745302B2 (en) 2014-10-17 2023-09-05 Applied Materials, Inc. Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process
WO2017074773A1 (en) 2015-10-30 2017-05-04 Applied Materials, Inc. An apparatus and method of forming a polishing article that has a desired zeta potential
US10593574B2 (en) 2015-11-06 2020-03-17 Applied Materials, Inc. Techniques for combining CMP process tracking data with 3D printed CMP consumables
US10391605B2 (en) 2016-01-19 2019-08-27 Applied Materials, Inc. Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process
DE102016214568A1 (de) * 2016-08-05 2018-02-08 Weeke Bohrsysteme Gmbh Bearbeitungsvorrichtung und Bearbeitungsverfahren
WO2018132306A1 (en) 2017-01-10 2018-07-19 Vermeer Manufacturing Company Systems and methods for dosing slurries to remove suspended solids
US11471999B2 (en) 2017-07-26 2022-10-18 Applied Materials, Inc. Integrated abrasive polishing pads and manufacturing methods
WO2019022961A1 (en) * 2017-07-28 2019-01-31 Applied Materials, Inc. METHOD FOR IDENTIFYING AND MONITORING ROLLER ROLL POLISHING PAD MATERIALS DURING PROCESSING
WO2019032286A1 (en) 2017-08-07 2019-02-14 Applied Materials, Inc. ABRASIVE DISTRIBUTION POLISHING PADS AND METHODS OF MAKING SAME
CN112654655A (zh) 2018-09-04 2021-04-13 应用材料公司 先进抛光垫配方
US11851570B2 (en) 2019-04-12 2023-12-26 Applied Materials, Inc. Anionic polishing pads formed by printing processes
KR20220083915A (ko) * 2020-12-11 2022-06-21 삼성디스플레이 주식회사 감지 센서를 포함하는 표시 장치 및 감지 센서 제조 방법
US11878389B2 (en) 2021-02-10 2024-01-23 Applied Materials, Inc. Structures formed using an additive manufacturing process for regenerating surface texture in situ

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Also Published As

Publication number Publication date
KR20010085953A (ko) 2001-09-07
TW445535B (en) 2001-07-11
JP2002528928A (ja) 2002-09-03
KR100637568B1 (ko) 2006-10-20
ATE222158T1 (de) 2002-08-15
US6325706B1 (en) 2001-12-04
EP1124666B1 (de) 2002-08-14
WO2000025983A1 (en) 2000-05-11
EP1124666A1 (de) 2001-08-22
AU6297799A (en) 2000-05-22
DE69902553T2 (de) 2003-04-24

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