DE69841449D1 - Sperrschicht-feldeffekttransistor aus silicumcarbid - Google Patents
Sperrschicht-feldeffekttransistor aus silicumcarbidInfo
- Publication number
- DE69841449D1 DE69841449D1 DE69841449T DE69841449T DE69841449D1 DE 69841449 D1 DE69841449 D1 DE 69841449D1 DE 69841449 T DE69841449 T DE 69841449T DE 69841449 T DE69841449 T DE 69841449T DE 69841449 D1 DE69841449 D1 DE 69841449D1
- Authority
- DE
- Germany
- Prior art keywords
- silicum
- carbide
- field effect
- effect transistor
- barrier field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000004888 barrier function Effects 0.000 title 1
- 230000005669 field effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
- H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
- Bipolar Transistors (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP1998/001185 WO1999048153A1 (fr) | 1998-03-19 | 1998-03-19 | Dispositif de commutation a semi-conducteur au carbure de silicium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE69841449D1 true DE69841449D1 (de) | 2010-03-04 |
Family
ID=14207836
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69841449T Expired - Lifetime DE69841449D1 (de) | 1998-03-19 | 1998-03-19 | Sperrschicht-feldeffekttransistor aus silicumcarbid |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6384428B1 (de) |
| EP (1) | EP1065726B1 (de) |
| KR (1) | KR100342798B1 (de) |
| CN (1) | CN1286805A (de) |
| DE (1) | DE69841449D1 (de) |
| WO (1) | WO1999048153A1 (de) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4360085B2 (ja) * | 2002-12-25 | 2009-11-11 | 株式会社デンソー | 炭化珪素半導体装置 |
| US6747291B1 (en) | 2003-01-10 | 2004-06-08 | The United States Of America As Represented By The Secretary Of The Air Force | Ohmic contacts on p-type silicon carbide using carbon films |
| CN1802752A (zh) | 2003-11-25 | 2006-07-12 | 松下电器产业株式会社 | 半导体元件 |
| WO2006090432A1 (ja) * | 2005-02-22 | 2006-08-31 | Neomax Co., Ltd. | ＳｉＣ単結晶基板の製造方法 |
| JP4775102B2 (ja) | 2005-05-09 | 2011-09-21 | 住友電気工業株式会社 | 半導体装置の製造方法 |
| JP4784178B2 (ja) * | 2005-07-01 | 2011-10-05 | 株式会社日立製作所 | 半導体装置 |
| JP5068009B2 (ja) * | 2005-09-14 | 2012-11-07 | 三菱電機株式会社 | 炭化ケイ素半導体装置 |
| CN101132030B (zh) * | 2007-08-24 | 2011-08-03 | 中国科学院上海硅酸盐研究所 | 一种高耐压碳化硅光导开关 |
| WO2011092808A1 (ja) * | 2010-01-27 | 2011-08-04 | 住友電気工業株式会社 | 炭化ケイ素半導体装置およびその製造方法 |
| CA2777675A1 (en) | 2010-01-19 | 2011-07-28 | Sumitomo Electric Industries, Ltd. | Silicon carbide semiconductor device and method of manufacturing thereof |
| CN102157597A (zh) * | 2010-02-11 | 2011-08-17 | 中国科学院上海硅酸盐研究所 | 一种光控碳化硅光电导开关 |
| EP3780114A1 (de) * | 2010-12-27 | 2021-02-17 | Sumitomo Electric Industries, Ltd. | Siliciumcarbidsubstrat, halbleiterbauelement, verfahren zur herstellung eines siliciumkarbidsubstrats und verfahren zur herstellung eines halbleiterbauelements |
| JP6278549B2 (ja) * | 2012-03-30 | 2018-02-14 | 富士電機株式会社 | 半導体装置 |
| JP2016004955A (ja) * | 2014-06-19 | 2016-01-12 | 三菱電機株式会社 | 炭化珪素半導体装置及びその製造方法 |
| CN104737912B (zh) * | 2015-03-31 | 2017-09-15 | 临沂大学 | 一种非洲菊组培快繁培养基及其培育方法 |
| JP6745458B2 (ja) * | 2015-04-15 | 2020-08-26 | パナソニックＩｐマネジメント株式会社 | 半導体素子 |
| US9773924B2 (en) | 2015-04-22 | 2017-09-26 | Panasonic Intellectual Property Management Co., Ltd. | Semiconductor device having barrier region and edge termination region enclosing barrier region |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63289960A (ja) * | 1987-05-22 | 1988-11-28 | Fujitsu Ltd | 電界効果型半導体装置 |
| JP3267983B2 (ja) * | 1991-02-14 | 2002-03-25 | 株式会社東芝 | 半導体発光素子及びその製造方法 |
| JP3146694B2 (ja) | 1992-11-12 | 2001-03-19 | 富士電機株式会社 | 炭化けい素ｍｏｓｆｅｔおよび炭化けい素ｍｏｓｆｅｔの製造方法 |
| JP2910573B2 (ja) * | 1993-09-10 | 1999-06-23 | 株式会社日立製作所 | 電界効果トランジスタ及びその製造方法 |
| EP0676814B1 (de) * | 1994-04-06 | 2006-03-22 | Denso Corporation | Herstellungsverfahren für Halbleiterbauelement mit Graben |
| WO1995034915A1 (en) * | 1994-06-13 | 1995-12-21 | Abb Research Ltd. | Semiconductor device in silicon carbide |
| US5736753A (en) * | 1994-09-12 | 1998-04-07 | Hitachi, Ltd. | Semiconductor device for improved power conversion having a hexagonal-system single-crystal silicon carbide |
| JP3158973B2 (ja) * | 1995-07-20 | 2001-04-23 | 富士電機株式会社 | 炭化けい素縦型ｆｅｔ |
| FR2738394B1 (fr) * | 1995-09-06 | 1998-06-26 | Nippon Denso Co | Dispositif a semi-conducteur en carbure de silicium, et son procede de fabrication |
| JP3471509B2 (ja) * | 1996-01-23 | 2003-12-02 | 株式会社デンソー | 炭化珪素半導体装置 |
| JPH10107263A (ja) * | 1996-09-27 | 1998-04-24 | Fuji Electric Co Ltd | 絶縁ゲート型炭化ケイ素半導体装置 |
| JPH10125904A (ja) * | 1996-10-17 | 1998-05-15 | Denso Corp | 炭化珪素半導体装置 |
-
1998
- 1998-03-19 WO PCT/JP1998/001185 patent/WO1999048153A1/ja active IP Right Grant
- 1998-03-19 KR KR1020007010289A patent/KR100342798B1/ko not_active IP Right Cessation
- 1998-03-19 EP EP98909765A patent/EP1065726B1/de not_active Expired - Lifetime
- 1998-03-19 DE DE69841449T patent/DE69841449D1/de not_active Expired - Lifetime
- 1998-03-19 CN CN98813915A patent/CN1286805A/zh active Pending
- 1998-03-19 US US09/646,305 patent/US6384428B1/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| KR100342798B1 (ko) | 2002-07-03 |
| EP1065726A1 (de) | 2001-01-03 |
| KR20010041965A (ko) | 2001-05-25 |
| CN1286805A (zh) | 2001-03-07 |
| EP1065726B1 (de) | 2010-01-13 |
| EP1065726A4 (de) | 2006-08-23 |
| WO1999048153A1 (fr) | 1999-09-23 |
| US6384428B1 (en) | 2002-05-07 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition |