DE69840523D1 - Verbesserter schutz fur aktiv-matrix-anzeigen vor elektrostatische entladungen sowie testschema - Google Patents

Verbesserter schutz fur aktiv-matrix-anzeigen vor elektrostatische entladungen sowie testschema

Info

Publication number
DE69840523D1
DE69840523D1 DE69840523T DE69840523T DE69840523D1 DE 69840523 D1 DE69840523 D1 DE 69840523D1 DE 69840523 T DE69840523 T DE 69840523T DE 69840523 T DE69840523 T DE 69840523T DE 69840523 D1 DE69840523 D1 DE 69840523D1
Authority
DE
Germany
Prior art keywords
teschema
active
improved protection
electrostatic discharges
matrix indicators
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69840523T
Other languages
English (en)
Inventor
Scott H Holmberg
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix America Inc
Original Assignee
Hyundai Electronics America Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics America Inc filed Critical Hyundai Electronics America Inc
Application granted granted Critical
Publication of DE69840523D1 publication Critical patent/DE69840523D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/782—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, each consisting of a single circuit element
    • H01L21/786—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, each consisting of a single circuit element the substrate being other than a semiconductor body, e.g. insulating body
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1306—Details
    • G02F1/1309—Repairing; Testing
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136204—Arrangements to prevent high voltage or static electricity failures
DE69840523T 1997-01-13 1998-01-13 Verbesserter schutz fur aktiv-matrix-anzeigen vor elektrostatische entladungen sowie testschema Expired - Fee Related DE69840523D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US78233597A 1997-01-13 1997-01-13
PCT/US1998/000508 WO1998031050A1 (en) 1997-01-13 1998-01-13 Improved active matrix esd protection and testing scheme

Publications (1)

Publication Number Publication Date
DE69840523D1 true DE69840523D1 (de) 2009-03-19

Family

ID=25125723

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69840523T Expired - Fee Related DE69840523D1 (de) 1997-01-13 1998-01-13 Verbesserter schutz fur aktiv-matrix-anzeigen vor elektrostatische entladungen sowie testschema

Country Status (7)

Country Link
EP (1) EP1008177B1 (de)
JP (1) JP4294096B2 (de)
KR (1) KR100363307B1 (de)
CN (1) CN1129025C (de)
AU (1) AU6021198A (de)
DE (1) DE69840523D1 (de)
WO (1) WO1998031050A1 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2342213B (en) * 1998-09-30 2003-01-22 Lg Philips Lcd Co Ltd Thin film transistor substrate with testing circuit
KR100443539B1 (ko) 2002-04-16 2004-08-09 엘지.필립스 엘시디 주식회사 액정표시장치용 어레이기판과 그 제조방법
DE10227332A1 (de) * 2002-06-19 2004-01-15 Akt Electron Beam Technology Gmbh Ansteuervorrichtung mit verbesserten Testeneigenschaften
KR100870013B1 (ko) * 2002-08-27 2008-11-21 삼성전자주식회사 박막 트랜지스터 어레이 기판 및 그 제조 방법
KR100900543B1 (ko) 2002-11-14 2009-06-02 삼성전자주식회사 박막 트랜지스터 기판의 다결정 규소 박막 트랜지스터 및그의 형성 방법
KR100635061B1 (ko) * 2004-03-09 2006-10-17 삼성에스디아이 주식회사 평판 표시 장치 및 그의 제조 방법
KR101051008B1 (ko) * 2004-08-24 2011-07-21 삼성전자주식회사 어레이 기판의 제조 방법과, 이에 의해 제조된 어레이 기판
JP3982533B2 (ja) 2004-11-04 2007-09-26 ソニー株式会社 撮像装置および撮影補助マーク利用制御方法
US7477333B2 (en) 2005-08-30 2009-01-13 Chunghwa Picture Tubes, Ltd. Liquid crystal display panel with electrostatic discharge protection
KR101251351B1 (ko) 2005-12-28 2013-04-05 삼성디스플레이 주식회사 박막트랜지스터 기판, 이의 제조방법 및 이를 갖는표시패널
US20080024427A1 (en) * 2006-07-26 2008-01-31 Prime View International Co., Ltd. Electronic ink display panel
CN101661698B (zh) * 2008-08-26 2014-07-16 群创光电股份有限公司 显示影像系统
KR101082174B1 (ko) 2009-11-27 2011-11-09 삼성모바일디스플레이주식회사 유기전계발광 표시 장치 및 그의 제조 방법
CN103163670B (zh) * 2011-12-19 2016-03-02 上海中航光电子有限公司 一种液晶显示装置的检测开关
CN102566130B (zh) * 2012-03-02 2014-06-18 深圳市华星光电技术有限公司 液晶面板制造方法及装置
KR102330861B1 (ko) * 2015-11-17 2021-11-24 엘지디스플레이 주식회사 정전기 방지 회로 및 이를 적용한 백플레인 기판 및 이의 제조 방법
CN105372857B (zh) * 2015-12-16 2018-01-23 上海天马微电子有限公司 一种玻璃基板、液晶显示面板及液晶显示装置
CN112068375B (zh) * 2020-09-23 2022-10-11 北海惠科光电技术有限公司 母基板和显示面板

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4820222A (en) * 1986-12-31 1989-04-11 Alphasil, Inc. Method of manufacturing flat panel backplanes including improved testing and yields thereof and displays made thereby
JPH0711640B2 (ja) * 1988-07-07 1995-02-08 松下電器産業株式会社 アクティブマトリックス基板
JP2642462B2 (ja) * 1988-12-12 1997-08-20 シャープ株式会社 マトリクス形表示装置用基板および検査修正方法
JP2610328B2 (ja) * 1988-12-21 1997-05-14 株式会社東芝 液晶表示素子の製造方法
US5019002A (en) * 1989-07-12 1991-05-28 Honeywell, Inc. Method of manufacturing flat panel backplanes including electrostatic discharge prevention and displays made thereby
JP2764139B2 (ja) * 1989-10-20 1998-06-11 ホシデン・フィリップス・ディスプレイ株式会社 アクティブマトリックス液晶表示素子
JP2579427B2 (ja) * 1993-11-10 1997-02-05 インターナショナル・ビジネス・マシーンズ・コーポレイション 表示装置及び表示装置の駆動方法
JP3315834B2 (ja) * 1995-05-31 2002-08-19 富士通株式会社 薄膜トランジスタマトリクス装置及びその製造方法
US5668032A (en) * 1995-07-31 1997-09-16 Holmberg; Scott H. Active matrix ESD protection and testing scheme

Also Published As

Publication number Publication date
JP2001516465A (ja) 2001-09-25
KR20000070100A (ko) 2000-11-25
AU6021198A (en) 1998-08-03
CN1129025C (zh) 2003-11-26
KR100363307B1 (ko) 2002-11-30
EP1008177B1 (de) 2009-01-28
WO1998031050A1 (en) 1998-07-16
EP1008177A1 (de) 2000-06-14
EP1008177A4 (de) 2000-12-27
CN1243603A (zh) 2000-02-02
JP4294096B2 (ja) 2009-07-08

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee