DE69834096D1 - Verfahren zur herstellung einer halbleiteranordnung mit schottky-übergang - Google Patents
Verfahren zur herstellung einer halbleiteranordnung mit schottky-übergangInfo
- Publication number
- DE69834096D1 DE69834096D1 DE69834096T DE69834096T DE69834096D1 DE 69834096 D1 DE69834096 D1 DE 69834096D1 DE 69834096 T DE69834096 T DE 69834096T DE 69834096 T DE69834096 T DE 69834096T DE 69834096 D1 DE69834096 D1 DE 69834096D1
- Authority
- DE
- Germany
- Prior art keywords
- producing
- semiconductor assembly
- schottky transition
- schottky
- transition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 230000007704 transition Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66143—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP97202711 | 1997-09-03 | ||
EP97202711 | 1997-09-03 | ||
PCT/IB1998/001240 WO1999012188A2 (en) | 1997-09-03 | 1998-08-12 | Method of manufacturing a semiconductor device with a schottky junction |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69834096D1 true DE69834096D1 (de) | 2006-05-18 |
DE69834096T2 DE69834096T2 (de) | 2007-01-04 |
Family
ID=8228700
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69834096T Expired - Lifetime DE69834096T2 (de) | 1997-09-03 | 1998-08-12 | Verfahren zur herstellung einer halbleiteranordnung mit schottky-übergang |
Country Status (5)
Country | Link |
---|---|
US (1) | US6218222B1 (de) |
EP (1) | EP0935816B1 (de) |
JP (1) | JP3983306B2 (de) |
DE (1) | DE69834096T2 (de) |
WO (1) | WO1999012188A2 (de) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19930781B4 (de) * | 1999-07-03 | 2006-10-12 | Robert Bosch Gmbh | Diode mit Metall-Halbleiterkontakt und Verfahren zu ihrer Herstellung |
DE10015884A1 (de) * | 2000-03-30 | 2001-10-11 | Philips Corp Intellectual Pty | Schottky-Diode |
US8901699B2 (en) | 2005-05-11 | 2014-12-02 | Cree, Inc. | Silicon carbide junction barrier Schottky diodes with suppressed minority carrier injection |
US7466009B2 (en) * | 2006-06-05 | 2008-12-16 | Texas Instruments Incorporated | Method for reducing dislocation threading using a suppression implant |
US8324705B2 (en) * | 2008-05-27 | 2012-12-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Schottky diodes having low-voltage and high-concentration rings |
US8871600B2 (en) | 2011-11-11 | 2014-10-28 | International Business Machines Corporation | Schottky barrier diodes with a guard ring formed by selective epitaxy |
CN109326524B (zh) * | 2018-12-04 | 2021-04-16 | 扬州扬杰电子科技股份有限公司 | 一种肖特基二极管的加工方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2044863A1 (de) * | 1970-09-10 | 1972-03-23 | Siemens Ag | Verfahren zur Herstellung von Schottkydioden |
JPS51120674A (en) * | 1975-04-16 | 1976-10-22 | Hitachi Ltd | Semiconductor device |
US4096622A (en) * | 1975-07-31 | 1978-06-27 | General Motors Corporation | Ion implanted Schottky barrier diode |
US4326211A (en) * | 1977-09-01 | 1982-04-20 | U.S. Philips Corporation | N+PP-PP-P+ Avalanche photodiode |
FR2460040A1 (fr) * | 1979-06-22 | 1981-01-16 | Thomson Csf | Procede pour realiser une diode schottky a tenue en tension amelioree |
US4260431A (en) * | 1979-12-21 | 1981-04-07 | Harris Corporation | Method of making Schottky barrier diode by ion implantation and impurity diffusion |
DE3124572A1 (de) * | 1981-06-23 | 1982-12-30 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur herstellung von schottky-dioden |
JP2808965B2 (ja) * | 1992-02-19 | 1998-10-08 | 日本電気株式会社 | 半導体装置 |
JPH0817186B2 (ja) * | 1992-03-18 | 1996-02-21 | 三星電子株式会社 | 電界効果トランジスタの製造方法 |
US5399883A (en) * | 1994-05-04 | 1995-03-21 | North Carolina State University At Raleigh | High voltage silicon carbide MESFETs and methods of fabricating same |
US5484740A (en) * | 1994-06-06 | 1996-01-16 | Motorola, Inc. | Method of manufacturing a III-V semiconductor gate structure |
-
1998
- 1998-08-12 DE DE69834096T patent/DE69834096T2/de not_active Expired - Lifetime
- 1998-08-12 JP JP51648899A patent/JP3983306B2/ja not_active Expired - Fee Related
- 1998-08-12 EP EP98935252A patent/EP0935816B1/de not_active Expired - Lifetime
- 1998-08-12 WO PCT/IB1998/001240 patent/WO1999012188A2/en active IP Right Grant
- 1998-08-27 US US09/141,644 patent/US6218222B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0935816A2 (de) | 1999-08-18 |
US6218222B1 (en) | 2001-04-17 |
DE69834096T2 (de) | 2007-01-04 |
WO1999012188A3 (en) | 1999-05-27 |
WO1999012188A2 (en) | 1999-03-11 |
JP2001505368A (ja) | 2001-04-17 |
EP0935816B1 (de) | 2006-04-05 |
JP3983306B2 (ja) | 2007-09-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8320 | Willingness to grant licences declared (paragraph 23) | ||
8364 | No opposition during term of opposition | ||
8328 | Change in the person/name/address of the agent |
Representative=s name: EISENFUEHR, SPEISER & PARTNER, 10178 BERLIN |
|
8327 | Change in the person/name/address of the patent owner |
Owner name: NXP B.V., EINDHOVEN, NL |