DE69823721D1 - Maganoxid-Material mit einer Mn03-Matrix - Google Patents

Maganoxid-Material mit einer Mn03-Matrix

Info

Publication number
DE69823721D1
DE69823721D1 DE69823721T DE69823721T DE69823721D1 DE 69823721 D1 DE69823721 D1 DE 69823721D1 DE 69823721 T DE69823721 T DE 69823721T DE 69823721 T DE69823721 T DE 69823721T DE 69823721 D1 DE69823721 D1 DE 69823721D1
Authority
DE
Germany
Prior art keywords
magan
matrix
oxide material
oxide
magan oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69823721T
Other languages
English (en)
Other versions
DE69823721T2 (de
Inventor
Atsushi Asamitsu
Yasuhide Tomioka
Hideki Kuwahara
Yoshinori Tokura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Sharp Corp
Sanyo Electric Co Ltd
New Energy and Industrial Technology Development Organization
Original Assignee
National Institute of Advanced Industrial Science and Technology AIST
Sharp Corp
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Institute of Advanced Industrial Science and Technology AIST, Sharp Corp, Sanyo Electric Co Ltd filed Critical National Institute of Advanced Industrial Science and Technology AIST
Publication of DE69823721D1 publication Critical patent/DE69823721D1/de
Application granted granted Critical
Publication of DE69823721T2 publication Critical patent/DE69823721T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G45/00—Compounds of manganese
    • C01G45/12—Manganates manganites or permanganates
    • C01G45/1221—Manganates or manganites with a manganese oxidation state of Mn(III), Mn(IV) or mixtures thereof
    • C01G45/125—Manganates or manganites with a manganese oxidation state of Mn(III), Mn(IV) or mixtures thereof of the type[MnO3]n-, e.g. Li2MnO3, Li2[MxMn1-xO3], (La,Sr)MnO3
    • C01G45/1264—Manganates or manganites with a manganese oxidation state of Mn(III), Mn(IV) or mixtures thereof of the type[MnO3]n-, e.g. Li2MnO3, Li2[MxMn1-xO3], (La,Sr)MnO3 containing rare earth, e.g. La1-xCaxMnO3, LaMnO3
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/016—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on manganites
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
    • H01F1/0009—Antiferromagnetic materials, i.e. materials exhibiting a Néel transition temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
    • H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
    • H01F1/40—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4
    • H01F1/401—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4 diluted
    • H01F1/407—Diluted non-magnetic ions in a magnetic cation-sublattice, e.g. perovskites, La1-x(Ba,Sr)xMnO3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8836—Complex metal oxides, e.g. perovskites, spinels
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/40—Electric properties
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/30—Resistive cell, memory material aspects
    • G11C2213/31—Material having complex metal oxide, e.g. perovskite structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Manufacturing & Machinery (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Structural Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Hall/Mr Elements (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE69823721T 1997-03-14 1998-03-13 Maganoxid-Material mit einer Mn03-Matrix Expired - Lifetime DE69823721T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP9060632A JP3030333B2 (ja) 1997-03-14 1997-03-14 電流及び電場誘起相転移を用いたスイッチング素子及びメモリー素子
JP6063297 1997-03-14

Publications (2)

Publication Number Publication Date
DE69823721D1 true DE69823721D1 (de) 2004-06-17
DE69823721T2 DE69823721T2 (de) 2005-05-12

Family

ID=13147891

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69823721T Expired - Lifetime DE69823721T2 (de) 1997-03-14 1998-03-13 Maganoxid-Material mit einer Mn03-Matrix

Country Status (4)

Country Link
US (1) US6166947A (de)
EP (1) EP0864538B1 (de)
JP (1) JP3030333B2 (de)
DE (1) DE69823721T2 (de)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000095522A (ja) * 1998-06-29 2000-04-04 Sharp Corp ペロブスカイト型マンガン酸化物薄膜、その製造方法及びそれを用いた赤外線検出素子
US6590268B2 (en) * 2000-03-14 2003-07-08 Matsushita Electric Industrial Co., Ltd. Magnetic control device, and magnetic component and memory apparatus using the same
DE10110292C1 (de) * 2001-02-26 2002-10-02 Dresden Ev Inst Festkoerper Stromabhängiges resistives Bauelement
US6569745B2 (en) * 2001-06-28 2003-05-27 Sharp Laboratories Of America, Inc. Shared bit line cross point memory array
JP2004273656A (ja) 2003-03-07 2004-09-30 Taiyo Yuden Co Ltd Ｅｐｉｒ素子及びそれを利用した半導体装置
US6927120B2 (en) * 2003-05-21 2005-08-09 Sharp Laboratories Of America, Inc. Method for forming an asymmetric crystalline structure memory cell
KR100552704B1 (ko) * 2003-12-17 2006-02-20 삼성전자주식회사 반도체 장치의 불휘발성 커패시터, 이를 포함하는 반도체메모리 소자 및 그 동작방법
JP2005311071A (ja) * 2004-04-21 2005-11-04 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JP2006269688A (ja) * 2005-03-23 2006-10-05 National Institute Of Advanced Industrial & Technology 不揮発性メモリ素子
DE112006000612T5 (de) * 2005-03-23 2008-02-14 National Institute Of Advanced Industrial Science And Technology Nichtflüchtiges Speicherelement
JP4919146B2 (ja) 2005-09-27 2012-04-18 独立行政法人産業技術総合研究所 スイッチング素子
US7615771B2 (en) 2006-04-27 2009-11-10 Hitachi Global Storage Technologies Netherlands, B.V. Memory array having memory cells formed from metallic material
US20080137396A1 (en) * 2006-12-07 2008-06-12 Jan Boris Philipp Spin glass memory cell
JP4446054B2 (ja) 2007-03-23 2010-04-07 独立行政法人産業技術総合研究所 不揮発性記憶素子
JP2008244373A (ja) * 2007-03-29 2008-10-09 Japan Advanced Institute Of Science & Technology Hokuriku アモルファス基板またはアモルファス膜の上にマンガン酸化物を直に堆積させた２層構造物。
US20080313166A1 (en) * 2007-06-15 2008-12-18 Microsoft Corporation Research progression summary
DE102008019860B4 (de) * 2008-04-15 2010-10-07 Technische Universität Dresden Vorrichtung, Verfahren und Verwendung des Verfahrens zur Erzeugung von schaltbarem temporärem Magnetismus in oxidischen Materialien mittels elektrischer Felder
JP5569836B2 (ja) * 2008-12-18 2014-08-13 国立大学法人広島大学 ペロブスカイト型酸化物の相転移誘起方法、電子機能素子材料として用いられるペロブスカイト型酸化物、ペロブスカイト型酸化物を用いた電子機能素子及び電子装置
JP5482021B2 (ja) * 2009-08-26 2014-04-23 富士通株式会社 抵抗スイッチ素子および抵抗スイッチメモリ素子
EP2650407B1 (de) 2010-12-09 2015-07-29 Fuji Electric Co., Ltd. Perovskitmanganoxid-dünnfilm
JP5725036B2 (ja) 2010-12-09 2015-05-27 富士電機株式会社 ペロフスカイト型マンガン酸化物薄膜およびその製造方法
WO2012124506A1 (ja) 2011-03-14 2012-09-20 富士電機株式会社 酸化物基板およびその製造方法
WO2012140971A1 (ja) 2011-04-14 2012-10-18 富士電機株式会社 ペロフスカイト型マンガン酸化物薄膜
US20130200457A1 (en) 2011-06-16 2013-08-08 Fuji Electric Co., Ltd. Strongly correlated oxide field effect element
WO2013058044A1 (ja) 2011-10-19 2013-04-25 富士電機株式会社 強相関不揮発メモリー素子
WO2013108507A1 (ja) 2012-01-20 2013-07-25 富士電機株式会社 マンガン酸化物薄膜および酸化物積層体
US9006737B2 (en) 2012-01-20 2015-04-14 Fuji Electric Co., Ltd. Manganese oxide thin film and oxide laminate
US11264566B2 (en) 2019-06-21 2022-03-01 Headway Technologies, Inc. Magnetic element with perpendicular magnetic anisotropy (PMA) and improved coercivity field (Hc)/switching current ratio
US11094653B2 (en) 2019-11-13 2021-08-17 Sandisk Technologies Llc Bonded assembly containing a dielectric bonding pattern definition layer and methods of forming the same
WO2021101582A1 (en) * 2019-11-18 2021-05-27 Western Digital Technologies, Inc. Electric field controllable spin filter tunnel junction magnetoresistive memory devices and methods of making the same
US10964748B1 (en) 2019-11-18 2021-03-30 Western Digital Technologies, Inc. Electric field controllable spin filter tunnel junction magnetoresistive memory devices and methods of making the same
US11069741B2 (en) 2019-11-18 2021-07-20 Western Digital Technologies, Inc. Electric field controllable spin filter tunnel junction magnetoresistive memory devices and methods of making the same

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5487356A (en) * 1992-08-07 1996-01-30 Advanced Technology Materials, Inc. Chemical vapor deposition method of growing oxide films with giant magnetoresistance
US5506077A (en) * 1993-06-14 1996-04-09 Koksbang; Rene Manganese oxide cathode active material
JP2685721B2 (ja) * 1994-11-04 1997-12-03 工業技術院長 無粒界型マンガン酸化物系結晶体及びスイッチング型磁気抵抗素子
JP2748876B2 (ja) * 1995-01-27 1998-05-13 日本電気株式会社 磁気抵抗効果膜

Also Published As

Publication number Publication date
US6166947A (en) 2000-12-26
EP0864538A1 (de) 1998-09-16
JPH10255481A (ja) 1998-09-25
JP3030333B2 (ja) 2000-04-10
DE69823721T2 (de) 2005-05-12
EP0864538B1 (de) 2004-05-12

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE

Owner name: SHARP K.K., OSAKA, JP

Owner name: SANYO ELECTRIC CO., LTD., MORIGUCHI, OSAKA, JP

Owner name: NEW ENERGY AND INDUSTRIAL TECHNOLOGY DEVELOPMENT O