DE69821780D1 - Herstellungsverfahren für p- und n-leitende stickstoffhaltige aiii-bv-halbleiterverbindungen - Google Patents

Herstellungsverfahren für p- und n-leitende stickstoffhaltige aiii-bv-halbleiterverbindungen

Info

Publication number
DE69821780D1
DE69821780D1 DE69821780T DE69821780T DE69821780D1 DE 69821780 D1 DE69821780 D1 DE 69821780D1 DE 69821780 T DE69821780 T DE 69821780T DE 69821780 T DE69821780 T DE 69821780T DE 69821780 D1 DE69821780 D1 DE 69821780D1
Authority
DE
Germany
Prior art keywords
light
aiii
manufacturing process
detectors
semiconductors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69821780T
Other languages
English (en)
Other versions
DE69821780T2 (de
Inventor
Sylwester Porowski
Jan Jun
Tadeusz Suski
Czeslaw Skierbiszewski
Michal Leszczynski
Izabella Grzegory
Henryk Teisseyre
Jacek Baranowski
Elzbieta Litwin-Staszewska
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CT BADAN WYSOKOCISNIENIOWYCH P
Original Assignee
CT BADAN WYSOKOCISNIENIOWYCH P
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CT BADAN WYSOKOCISNIENIOWYCH P filed Critical CT BADAN WYSOKOCISNIENIOWYCH P
Publication of DE69821780D1 publication Critical patent/DE69821780D1/de
Application granted granted Critical
Publication of DE69821780T2 publication Critical patent/DE69821780T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02634—Homoepitaxy

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE1998621780 1997-06-06 1998-06-03 Herstellungsverfahren für p- und n-leitende stickstoffhaltige aiii-bv-halbleiterverbindungen Expired - Lifetime DE69821780T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
PL32040997 1997-06-06
PL97320409A PL183687B1 (pl) 1997-06-06 1997-06-06 Sposób wytwarzania półprzewodnikowych związków grupy A-B o przewodnictwie elektrycznym typu p i typu n
PCT/PL1998/000024 WO1998056046A1 (en) 1997-06-06 1998-06-03 THE METHOD OF FABRICATION OF SEMICONDUCTING COMPOUNDS OF NITRIDES A3B5 OF p- AND n-TYPE ELECTRIC CONDUCTIVITY

Publications (2)

Publication Number Publication Date
DE69821780D1 true DE69821780D1 (de) 2004-03-25
DE69821780T2 DE69821780T2 (de) 2005-01-13

Family

ID=20070035

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1998621780 Expired - Lifetime DE69821780T2 (de) 1997-06-06 1998-06-03 Herstellungsverfahren für p- und n-leitende stickstoffhaltige aiii-bv-halbleiterverbindungen

Country Status (7)

Country Link
US (1) US6329215B1 (de)
EP (1) EP1018167B1 (de)
JP (1) JP2002503394A (de)
AT (1) ATE259990T1 (de)
DE (1) DE69821780T2 (de)
PL (1) PL183687B1 (de)
WO (1) WO1998056046A1 (de)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW577813B (en) * 2000-07-10 2004-03-01 Semiconductor Energy Lab Film forming apparatus and method of manufacturing light emitting device
PL219109B1 (pl) * 2001-06-06 2015-03-31 Ammono Spółka Z Ograniczoną Odpowiedzialnością Sposób otrzymywania objętościowego monokrystalicznego azotku zawierającego gal oraz urządzenie do otrzymywania objętościowego monokrystalicznego azotku zawierającego gal
DE60234856D1 (de) 2001-10-26 2010-02-04 Ammono Sp Zoo Substrat für epitaxie
KR100679377B1 (ko) 2001-10-26 2007-02-05 암모노 에스피. 제트오. 오. 질화물 벌크 단결정층을 사용한 발광 디바이스 구조
US20060138431A1 (en) * 2002-05-17 2006-06-29 Robert Dwilinski Light emitting device structure having nitride bulk single crystal layer
AU2002354463A1 (en) * 2002-05-17 2003-12-02 Ammono Sp.Zo.O. Bulk single crystal production facility employing supercritical ammonia
JP4416648B2 (ja) * 2002-05-17 2010-02-17 アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン 発光素子の製造方法
EP1518009B1 (de) 2002-06-26 2013-07-17 Ammono S.A. Verfahren zur herstellung von massiven einkristallen aus gallium enthaltendem nitrid
AU2003285768A1 (en) * 2002-12-11 2004-06-30 Ammono Sp. Z O.O. A template type substrate and a method of preparing the same
TWI334890B (en) 2002-12-11 2010-12-21 Ammono Sp Zoo Process for obtaining bulk mono-crystalline gallium-containing nitride, eliminating impurities from the obtained crystal and manufacturing substrates made of bulk mono-crystalline gallium-containing nitride
JP2006013473A (ja) * 2004-05-24 2006-01-12 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子
JP5014804B2 (ja) * 2004-06-11 2012-08-29 アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン バルク単結晶ガリウム含有窒化物およびその用途
PL371405A1 (pl) * 2004-11-26 2006-05-29 Ammono Sp.Z O.O. Sposób wytwarzania objętościowych monokryształów metodą wzrostu na zarodku
KR20070095603A (ko) * 2006-03-22 2007-10-01 삼성코닝 주식회사 질화물계 반도체 기판의 아연 이온주입방법
JP2008135700A (ja) * 2006-11-01 2008-06-12 Furukawa Electric Co Ltd:The Ｉｉｉ族窒化物膜の製造方法及びｉｉｉ族窒化物半導体素子
US9218991B2 (en) 2007-06-25 2015-12-22 Infineon Technologies Americas Corp. Ion implantation at high temperature surface equilibrium conditions
US8395132B2 (en) 2007-06-25 2013-03-12 International Rectifier Corporation Ion implanting while growing a III-nitride layer
US8093597B2 (en) 2007-06-25 2012-01-10 International Rectifier Corporation In situ dopant implantation and growth of a III-nitride semiconductor body
PL219706B1 (pl) 2010-03-23 2015-06-30 Inst Chemii Fizycznej Polskiej Akademii Nauk Platforma do pomiarów powierzchniowo wzmocnionego efektu Ramana
FR3026558B1 (fr) * 2014-09-26 2018-03-09 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede d'activation de dopants dans une couche semi-conductrice a base de gan
JP6911281B2 (ja) * 2016-05-18 2021-07-28 富士電機株式会社 半導体装置の製造方法
JP2020155469A (ja) * 2019-03-18 2020-09-24 国立大学法人東海国立大学機構 窒化物半導体装置の製造方法
JP2020155468A (ja) * 2019-03-18 2020-09-24 国立大学法人東海国立大学機構 窒化物半導体装置の製造方法
JP7312402B2 (ja) * 2019-11-22 2023-07-21 株式会社アルバック 窒化物半導体基板の製造方法
US11901484B2 (en) 2021-06-11 2024-02-13 Applied Materials, Inc. Methods and systems for UV LED structures

Family Cites Families (7)

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Publication number Priority date Publication date Assignee Title
JPH0590639A (ja) * 1991-09-27 1993-04-09 Toshiba Corp 半導体発光素子の製造方法
JP2540791B2 (ja) * 1991-11-08 1996-10-09 日亜化学工業株式会社 ｐ型窒化ガリウム系化合物半導体の製造方法。
US5306662A (en) 1991-11-08 1994-04-26 Nichia Chemical Industries, Ltd. Method of manufacturing P-type compound semiconductor
JPH05275802A (ja) * 1992-03-27 1993-10-22 Fuji Xerox Co Ltd 半導体レーザの製造方法
PL173917B1 (pl) * 1993-08-10 1998-05-29 Ct Badan Wysokocisnieniowych P Sposób wytwarzania krystalicznej struktury wielowarstwowej
JPH0964419A (ja) * 1995-08-28 1997-03-07 Sumitomo Chem Co Ltd ３−５族化合物半導体及び発光素子
JP3642157B2 (ja) * 1997-05-26 2005-04-27 ソニー株式会社 ｐ型ＩＩＩ族ナイトライド化合物半導体、発光ダイオードおよび半導体レーザ

Also Published As

Publication number Publication date
EP1018167A1 (de) 2000-07-12
JP2002503394A (ja) 2002-01-29
US6329215B1 (en) 2001-12-11
ATE259990T1 (de) 2004-03-15
PL183687B1 (pl) 2002-06-28
PL320409A1 (en) 1998-12-07
EP1018167B1 (de) 2004-02-18
WO1998056046A1 (en) 1998-12-10
DE69821780T2 (de) 2005-01-13

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