DE69821560D1 - Epitaxieverfahren auf einem Siliciumsubstrat mit durch Arsen hochdotierten Gebieten - Google Patents

Epitaxieverfahren auf einem Siliciumsubstrat mit durch Arsen hochdotierten Gebieten

Info

Publication number
DE69821560D1
DE69821560D1 DE69821560T DE69821560T DE69821560D1 DE 69821560 D1 DE69821560 D1 DE 69821560D1 DE 69821560 T DE69821560 T DE 69821560T DE 69821560 T DE69821560 T DE 69821560T DE 69821560 D1 DE69821560 D1 DE 69821560D1
Authority
DE
Germany
Prior art keywords
arsenic
silicon substrate
heavily doped
epitaxial process
areas heavily
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69821560T
Other languages
English (en)
Other versions
DE69821560T2 (de
Inventor
Didier Dutartre
Patrick Jerier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Orange SA
Original Assignee
STMicroelectronics SA
France Telecom SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA, France Telecom SA filed Critical STMicroelectronics SA
Application granted granted Critical
Publication of DE69821560D1 publication Critical patent/DE69821560D1/de
Publication of DE69821560T2 publication Critical patent/DE69821560T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE69821560T 1997-07-31 1998-07-28 Epitaxieverfahren auf einem Siliciumsubstrat mit durch Arsen hochdotierten Gebieten Expired - Lifetime DE69821560T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR9710032 1997-07-31
FR9710032A FR2766845B1 (fr) 1997-07-31 1997-07-31 Procede d'epitaxie sur un substrat de silicium comprenant des zones fortement dopees a l'arsenic

Publications (2)

Publication Number Publication Date
DE69821560D1 true DE69821560D1 (de) 2004-03-18
DE69821560T2 DE69821560T2 (de) 2005-01-05

Family

ID=9510054

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69821560T Expired - Lifetime DE69821560T2 (de) 1997-07-31 1998-07-28 Epitaxieverfahren auf einem Siliciumsubstrat mit durch Arsen hochdotierten Gebieten

Country Status (5)

Country Link
US (2) US6162706A (de)
EP (1) EP0897024B1 (de)
JP (1) JPH11139900A (de)
DE (1) DE69821560T2 (de)
FR (1) FR2766845B1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2766845B1 (fr) 1997-07-31 1999-10-15 Sgs Thomson Microelectronics Procede d'epitaxie sur un substrat de silicium comprenant des zones fortement dopees a l'arsenic
US20030138545A1 (en) * 2002-01-22 2003-07-24 Guanggu Sun Glucomannan high fiber beverage
US6911367B2 (en) * 2003-04-18 2005-06-28 Micron Technology, Inc. Methods of forming semiconductive materials having flattened surfaces; methods of forming isolation regions; and methods of forming elevated source/drain regions
JP4599816B2 (ja) * 2003-08-01 2010-12-15 信越半導体株式会社 シリコンエピタキシャルウェーハの製造方法
US7474114B2 (en) * 2005-09-08 2009-01-06 Sitronic Corporation System and method for characterizing silicon wafers
WO2007131343A1 (en) * 2006-05-15 2007-11-22 Arise Technologies Corporation Low-temperature doping processes for silicon wafer devices

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3660180A (en) * 1969-02-27 1972-05-02 Ibm Constrainment of autodoping in epitaxial deposition
FR2041710B1 (de) * 1969-05-08 1974-06-14 Radiotechnique Compelec
US3716422A (en) * 1970-03-30 1973-02-13 Ibm Method of growing an epitaxial layer by controlling autodoping
US3669769A (en) * 1970-09-29 1972-06-13 Ibm Method for minimizing autodoping in epitaxial deposition
US3765960A (en) * 1970-11-02 1973-10-16 Ibm Method for minimizing autodoping in epitaxial deposition
US4153486A (en) * 1978-06-05 1979-05-08 International Business Machines Corporation Silicon tetrachloride epitaxial process for producing very sharp autodoping profiles and very low defect densities on substrates with high concentration buried impurity layers utilizing a preheating in hydrogen
JPS57115822A (en) * 1981-01-08 1982-07-19 Nec Corp Manufacture of semiconductor device
JPS57196800A (en) * 1981-05-29 1982-12-02 Nec Corp Silicon epitaxial growth method
US4504330A (en) * 1983-10-19 1985-03-12 International Business Machines Corporation Optimum reduced pressure epitaxial growth process to prevent autodoping
US5221412A (en) * 1989-09-26 1993-06-22 Toagosei Chemical Industry Co., Ltd. Vapor-phase epitaxial growth process by a hydrogen pretreatment step followed by decomposition of disilane to form monocrystalline Si film
EP0671770B1 (de) * 1993-02-09 2000-08-02 GENERAL SEMICONDUCTOR, Inc. Mehrschichtige Epitaxie für eine Siliziumdiode
US5356837A (en) * 1993-10-29 1994-10-18 International Business Machines Corporation Method of making epitaxial cobalt silicide using a thin metal underlayer
FR2766845B1 (fr) 1997-07-31 1999-10-15 Sgs Thomson Microelectronics Procede d'epitaxie sur un substrat de silicium comprenant des zones fortement dopees a l'arsenic

Also Published As

Publication number Publication date
FR2766845B1 (fr) 1999-10-15
JPH11139900A (ja) 1999-05-25
DE69821560T2 (de) 2005-01-05
EP0897024A1 (de) 1999-02-17
US20020081374A1 (en) 2002-06-27
US6162706A (en) 2000-12-19
EP0897024B1 (de) 2004-02-11
US6776842B2 (en) 2004-08-17
FR2766845A1 (fr) 1999-02-05

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition