DE69804742D1 - Magnetisches Dünnfilmspeicherelement und Aufnahme-/Wiedergabeverfahren unter dessen Verwendung - Google Patents

Magnetisches Dünnfilmspeicherelement und Aufnahme-/Wiedergabeverfahren unter dessen Verwendung

Info

Publication number
DE69804742D1
DE69804742D1 DE69804742T DE69804742T DE69804742D1 DE 69804742 D1 DE69804742 D1 DE 69804742D1 DE 69804742 T DE69804742 T DE 69804742T DE 69804742 T DE69804742 T DE 69804742T DE 69804742 D1 DE69804742 D1 DE 69804742D1
Authority
DE
Germany
Prior art keywords
recording
thin film
same
memory element
reproducing method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69804742T
Other languages
English (en)
Other versions
DE69804742T2 (de
Inventor
Naoki Nishimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP15780698A external-priority patent/JP4040173B2/ja
Priority claimed from JP10256965A external-priority patent/JPH11154389A/ja
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE69804742D1 publication Critical patent/DE69804742D1/de
Publication of DE69804742T2 publication Critical patent/DE69804742T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/155—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements with cylindrical configuration
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1693—Timing circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Thin Magnetic Films (AREA)
DE69804742T 1997-09-18 1998-09-17 Magnetisches Dünnfilmspeicherelement und Aufnahme-/Wiedergabeverfahren unter dessen Verwendung Expired - Fee Related DE69804742T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP25353197 1997-09-18
JP15780698A JP4040173B2 (ja) 1998-06-05 1998-06-05 メモリ
JP10256965A JPH11154389A (ja) 1997-09-18 1998-09-10 磁気抵抗素子、磁性薄膜メモリ素子および該メモリ素子の記録再生方法

Publications (2)

Publication Number Publication Date
DE69804742D1 true DE69804742D1 (de) 2002-05-16
DE69804742T2 DE69804742T2 (de) 2002-09-26

Family

ID=27321232

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69804742T Expired - Fee Related DE69804742T2 (de) 1997-09-18 1998-09-17 Magnetisches Dünnfilmspeicherelement und Aufnahme-/Wiedergabeverfahren unter dessen Verwendung

Country Status (3)

Country Link
US (1) US6111784A (de)
EP (1) EP0910092B1 (de)
DE (1) DE69804742T2 (de)

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CN1182552C (zh) * 1998-08-12 2004-12-29 因芬尼昂技术股份公司 磁致电阻元件及其作为存储单元阵列内的存储元的应用
JP3235572B2 (ja) * 1998-09-18 2001-12-04 日本電気株式会社 磁気抵抗効果素子，磁気抵抗効果センサ及びそれらを利用したシステム
US6391483B1 (en) * 1999-03-30 2002-05-21 Carnegie Mellon University Magnetic device and method of forming same
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US20070164388A1 (en) * 2002-12-19 2007-07-19 Sandisk 3D Llc Memory cell comprising a diode fabricated in a low resistivity, programmed state
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US7285464B2 (en) * 2002-12-19 2007-10-23 Sandisk 3D Llc Nonvolatile memory cell comprising a reduced height vertical diode
US8008700B2 (en) * 2002-12-19 2011-08-30 Sandisk 3D Llc Non-volatile memory cell with embedded antifuse
JP2006511965A (ja) * 2002-12-19 2006-04-06 マトリックス セミコンダクター インコーポレイテッド 高密度不揮発性メモリを製作するための改良された方法
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US20050226067A1 (en) * 2002-12-19 2005-10-13 Matrix Semiconductor, Inc. Nonvolatile memory cell operating by increasing order in polycrystalline semiconductor material
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Also Published As

Publication number Publication date
EP0910092B1 (de) 2002-04-10
US6111784A (en) 2000-08-29
DE69804742T2 (de) 2002-09-26
EP0910092A2 (de) 1999-04-21
EP0910092A3 (de) 1999-12-29

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