DE69804742D1 - Magnetisches Dünnfilmspeicherelement und Aufnahme-/Wiedergabeverfahren unter dessen Verwendung - Google Patents

Magnetisches Dünnfilmspeicherelement und Aufnahme-/Wiedergabeverfahren unter dessen Verwendung

Info

Publication number
DE69804742D1
DE69804742D1 DE69804742T DE69804742T DE69804742D1 DE 69804742 D1 DE69804742 D1 DE 69804742D1 DE 69804742 T DE69804742 T DE 69804742T DE 69804742 T DE69804742 T DE 69804742T DE 69804742 D1 DE69804742 D1 DE 69804742D1
Authority
DE
Germany
Prior art keywords
recording
thin film
same
memory element
reproducing method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69804742T
Other languages
English (en)
Other versions
DE69804742T2 (de
Inventor
Naoki Nishimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP15780698A external-priority patent/JP4040173B2/ja
Priority claimed from JP10256965A external-priority patent/JPH11154389A/ja
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE69804742D1 publication Critical patent/DE69804742D1/de
Application granted granted Critical
Publication of DE69804742T2 publication Critical patent/DE69804742T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/155—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements with cylindrical configuration
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1693—Timing circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Thin Magnetic Films (AREA)
DE69804742T 1997-09-18 1998-09-17 Magnetisches Dünnfilmspeicherelement und Aufnahme-/Wiedergabeverfahren unter dessen Verwendung Expired - Fee Related DE69804742T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP25353197 1997-09-18
JP15780698A JP4040173B2 (ja) 1998-06-05 1998-06-05 メモリ
JP10256965A JPH11154389A (ja) 1997-09-18 1998-09-10 磁気抵抗素子、磁性薄膜メモリ素子および該メモリ素子の記録再生方法

Publications (2)

Publication Number Publication Date
DE69804742D1 true DE69804742D1 (de) 2002-05-16
DE69804742T2 DE69804742T2 (de) 2002-09-26

Family

ID=27321232

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69804742T Expired - Fee Related DE69804742T2 (de) 1997-09-18 1998-09-17 Magnetisches Dünnfilmspeicherelement und Aufnahme-/Wiedergabeverfahren unter dessen Verwendung

Country Status (3)

Country Link
US (1) US6111784A (de)
EP (1) EP0910092B1 (de)
DE (1) DE69804742T2 (de)

Families Citing this family (69)

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EP0959475A3 (de) * 1998-05-18 2000-11-08 Canon Kabushiki Kaisha Magnetischer Dünnfilmspeicher sowie Schreibe- und Leseverfahren und Anordnung unter Verwendung solchen Speichers
DE59904972D1 (de) * 1998-07-15 2003-05-15 Infineon Technologies Ag Speicherzellenanordnung, bei der ein elektrischer widerstand eines speicherelements eine information darstellt und durch ein magnetfeld beeinflussbar ist, und verfahren zu deren herstellung
KR100369721B1 (ko) * 1998-08-12 2003-01-30 인피니언 테크놀로지스 아게 자기 저항성 소자 및 메모리 셀 장치내에 메모리 소자로서상기 소자의 사용
JP3235572B2 (ja) * 1998-09-18 2001-12-04 日本電気株式会社 磁気抵抗効果素子，磁気抵抗効果センサ及びそれらを利用したシステム
US6391483B1 (en) * 1999-03-30 2002-05-21 Carnegie Mellon University Magnetic device and method of forming same
JP3589346B2 (ja) * 1999-06-17 2004-11-17 松下電器産業株式会社 磁気抵抗効果素子および磁気抵抗効果記憶素子
JP2001084758A (ja) * 1999-09-17 2001-03-30 Fujitsu Ltd 強磁性トンネル接合ランダムアクセスメモリ、スピンバルブランダムアクセスメモリ、単一強磁性膜ランダムアクセスメモリ、およびこれらをつかったメモリセルアレイ
US6473336B2 (en) * 1999-12-16 2002-10-29 Kabushiki Kaisha Toshiba Magnetic memory device
DE10032278C1 (de) * 2000-07-03 2001-11-29 Infineon Technologies Ag Verfahren zur Verhinderung von Elektromigration in einem MRAM
US6914749B2 (en) * 2000-07-25 2005-07-05 Seagate Technology Llc Magnetic anisotropy of soft-underlayer induced by magnetron field
US6538921B2 (en) 2000-08-17 2003-03-25 Nve Corporation Circuit selection of magnetic memory cells and related cell structures
US7035138B2 (en) * 2000-09-27 2006-04-25 Canon Kabushiki Kaisha Magnetic random access memory having perpendicular magnetic films switched by magnetic fields from a plurality of directions
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US6579625B1 (en) * 2000-10-24 2003-06-17 Motorola, Inc. Magnetoelectronics element having a magnetic layer formed of multiple sub-element layers
US6515341B2 (en) * 2001-02-26 2003-02-04 Motorola, Inc. Magnetoelectronics element having a stressed over-layer configured for alteration of the switching energy barrier
US6538920B2 (en) * 2001-04-02 2003-03-25 Manish Sharma Cladded read conductor for a pinned-on-the-fly soft reference layer
US6404674B1 (en) * 2001-04-02 2002-06-11 Hewlett Packard Company Intellectual Property Administrator Cladded read-write conductor for a pinned-on-the-fly soft reference layer
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JP3854839B2 (ja) * 2001-10-02 2006-12-06 キヤノン株式会社 磁気抵抗素子を用いた不揮発固体メモリ
US6552554B1 (en) 2001-12-06 2003-04-22 The United States Of America As Represented By The Secretary Of The Navy Testing current perpendicular to plane giant magnetoresistance multilayer devices
JP4184668B2 (ja) * 2002-01-10 2008-11-19 富士通株式会社 Ｃｐｐ構造磁気抵抗効果素子
JP3661652B2 (ja) * 2002-02-15 2005-06-15 ソニー株式会社 磁気抵抗効果素子および磁気メモリ装置
CN1254790C (zh) * 2002-03-29 2006-05-03 株式会社东芝 固体磁性元件以及固体磁性元件阵列
US6927073B2 (en) * 2002-05-16 2005-08-09 Nova Research, Inc. Methods of fabricating magnetoresistive memory devices
US6621730B1 (en) * 2002-08-27 2003-09-16 Motorola, Inc. Magnetic random access memory having a vertical write line
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US6956257B2 (en) 2002-11-18 2005-10-18 Carnegie Mellon University Magnetic memory element and memory device including same
KR100499136B1 (ko) * 2002-12-14 2005-07-04 삼성전자주식회사 전자 스핀의존 산란을 이용한 자성매체 및 자성매체정보재생장치 및 재생방법
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US7660181B2 (en) * 2002-12-19 2010-02-09 Sandisk 3D Llc Method of making non-volatile memory cell with embedded antifuse
US8637366B2 (en) * 2002-12-19 2014-01-28 Sandisk 3D Llc Nonvolatile memory cell without a dielectric antifuse having high- and low-impedance states
US7618850B2 (en) * 2002-12-19 2009-11-17 Sandisk 3D Llc Method of making a diode read/write memory cell in a programmed state
US8008700B2 (en) * 2002-12-19 2011-08-30 Sandisk 3D Llc Non-volatile memory cell with embedded antifuse
US7800933B2 (en) * 2005-09-28 2010-09-21 Sandisk 3D Llc Method for using a memory cell comprising switchable semiconductor memory element with trimmable resistance
US20070164388A1 (en) * 2002-12-19 2007-07-19 Sandisk 3D Llc Memory cell comprising a diode fabricated in a low resistivity, programmed state
US7285464B2 (en) * 2002-12-19 2007-10-23 Sandisk 3D Llc Nonvolatile memory cell comprising a reduced height vertical diode
US7800932B2 (en) 2005-09-28 2010-09-21 Sandisk 3D Llc Memory cell comprising switchable semiconductor memory element with trimmable resistance
US7027321B2 (en) * 2004-01-10 2006-04-11 Honeywell International Inc. Tunneling anisotropic magnetoresistive device and method of operation
US20070279971A1 (en) * 2004-06-04 2007-12-06 Micron Technology, Inc. Modified pseudo-spin valve (psv) for memory applications
US7120048B2 (en) * 2004-06-21 2006-10-10 Honeywell International Inc. Nonvolatile memory vertical ring bit and write-read structure
TW200617952A (en) * 2004-07-27 2006-06-01 Univ Toronto Tunable magnetic switch
US7307268B2 (en) * 2005-01-19 2007-12-11 Sandisk Corporation Structure and method for biasing phase change memory array for reliable writing
US7116575B1 (en) * 2005-03-23 2006-10-03 Honeywell International Inc. Architectures for CPP ring shaped (RS) devices
US7800934B2 (en) * 2005-09-28 2010-09-21 Sandisk 3D Llc Programming methods to increase window for reverse write 3D cell
US7701756B2 (en) 2005-12-21 2010-04-20 Governing Council Of The University Of Toronto Magnetic memory composition and method of manufacture
US20080174936A1 (en) * 2007-01-19 2008-07-24 Western Lights Semiconductor Corp. Apparatus and Method to Store Electrical Energy
US8072791B2 (en) * 2007-06-25 2011-12-06 Sandisk 3D Llc Method of making nonvolatile memory device containing carbon or nitrogen doped diode
US8102694B2 (en) * 2007-06-25 2012-01-24 Sandisk 3D Llc Nonvolatile memory device containing carbon or nitrogen doped diode
US7830697B2 (en) * 2007-06-25 2010-11-09 Sandisk 3D Llc High forward current diodes for reverse write 3D cell
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US7759666B2 (en) * 2007-06-29 2010-07-20 Sandisk 3D Llc 3D R/W cell with reduced reverse leakage
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US7812335B2 (en) * 2008-04-11 2010-10-12 Sandisk 3D Llc Sidewall structured switchable resistor cell
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TW201505026A (zh) * 2013-07-17 2015-02-01 Univ Nat Yunlin Sci & Tech 環形磁阻記憶體及其寫入方法
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Also Published As

Publication number Publication date
DE69804742T2 (de) 2002-09-26
US6111784A (en) 2000-08-29
EP0910092A3 (de) 1999-12-29
EP0910092B1 (de) 2002-04-10
EP0910092A2 (de) 1999-04-21

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