DE69800272T2 - Bauelementanordnung mit magnetfeldgesteuertem Transistor - Google Patents

Bauelementanordnung mit magnetfeldgesteuertem Transistor

Info

Publication number
DE69800272T2
DE69800272T2 DE69800272T DE69800272T DE69800272T2 DE 69800272 T2 DE69800272 T2 DE 69800272T2 DE 69800272 T DE69800272 T DE 69800272T DE 69800272 T DE69800272 T DE 69800272T DE 69800272 T2 DE69800272 T2 DE 69800272T2
Authority
DE
Germany
Prior art keywords
magnetic field
component arrangement
controlled transistor
field controlled
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69800272T
Other languages
English (en)
Other versions
DE69800272D1 (de
Inventor
Thaddeus John Gabara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nokia of America Corp
Original Assignee
Lucent Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lucent Technologies Inc filed Critical Lucent Technologies Inc
Publication of DE69800272D1 publication Critical patent/DE69800272D1/de
Application granted granted Critical
Publication of DE69800272T2 publication Critical patent/DE69800272T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
DE69800272T 1997-01-17 1998-01-06 Bauelementanordnung mit magnetfeldgesteuertem Transistor Expired - Lifetime DE69800272T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/785,516 US5872384A (en) 1997-01-17 1997-01-17 Component arrangement having magnetic field controlled transistor

Publications (2)

Publication Number Publication Date
DE69800272D1 DE69800272D1 (de) 2000-10-05
DE69800272T2 true DE69800272T2 (de) 2001-01-18

Family

ID=25135766

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69800272T Expired - Lifetime DE69800272T2 (de) 1997-01-17 1998-01-06 Bauelementanordnung mit magnetfeldgesteuertem Transistor

Country Status (5)

Country Link
US (1) US5872384A (de)
EP (1) EP0855741B1 (de)
JP (1) JP3383207B2 (de)
DE (1) DE69800272T2 (de)
TW (1) TW388979B (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3769120B2 (ja) * 1998-05-08 2006-04-19 株式会社東芝 半導体素子
DE19959725B4 (de) * 1999-12-10 2007-06-06 Infineon Technologies Ag Integrierte elektronische Schaltung mit wenigstens einer Induktivität und Verfahren zu ihrer Herstellung
FR2810451A1 (fr) * 2000-06-20 2001-12-21 Koninkl Philips Electronics Nv Circuit integre incluant un element inductif de facteur de qualite eleve et presentant une grande compacite
FR2819953B1 (fr) * 2001-01-24 2003-06-13 St Microelectronics Sa Commutateur de puissance a asservissement en di/dt
US6549096B2 (en) 2001-03-19 2003-04-15 International Business Machines Corporation Switched inductor/varactor tuning circuit having a variable integrated inductor
US6985058B2 (en) * 2002-09-17 2006-01-10 The Johns Hopkins University Lorentz force assisted switch
US7319261B1 (en) * 2002-11-21 2008-01-15 Analog Devices, Inc. Integrated MOS one-way isolation coupler and a semiconductor chip having an integrated MOS isolation one-way coupler located thereon
US7283029B2 (en) * 2004-12-08 2007-10-16 Purdue Research Foundation 3-D transformer for high-frequency applications
WO2006079998A1 (en) * 2005-01-31 2006-08-03 Koninklijke Philips Electronics N.V. Rapid and sensitive biosensing
JP4652434B2 (ja) * 2007-09-22 2011-03-16 太陽誘電株式会社 可変インダクタ及びこれを回路構成に組み入れた電子回路装置
US8614873B1 (en) * 2010-04-16 2013-12-24 James T. Beran Varying electrical current and/or conductivity in electrical current channels
US10424616B1 (en) * 2018-06-20 2019-09-24 Globalfoundries Singapore Pte. Ltd. Integrated circuit devices including vertical and lateral hall elements, and methods for fabricating the same

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4654684A (en) * 1981-04-13 1987-03-31 International Business Machines Corp. Magnetically sensitive transistors utilizing Lorentz field potential modultion of carrier injection
ES8303820A1 (es) * 1981-04-13 1983-02-01 Ibm "dispositivo transistor perfeccionado".
JPH065795B2 (ja) * 1985-02-18 1994-01-19 富士通株式会社 半導体装置
US4801883A (en) * 1986-06-02 1989-01-31 The Regents Of The University Of California Integrated-circuit one-way isolation coupler incorporating one or several carrier-domain magnetometers
GB2211987B (en) * 1987-10-30 1992-01-02 Plessey Co Plc Circuit arrangement including an inductor and a mesfet
US5208477A (en) * 1990-12-31 1993-05-04 The United States Of America As Represented By The Secretary Of The Navy Resistive gate magnetic field sensor
US5179429A (en) * 1992-03-30 1993-01-12 Motorola, Inc. Magnetic field sensor with split collector contacts for high sensitivity
JPH0888324A (ja) * 1994-09-19 1996-04-02 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法

Also Published As

Publication number Publication date
DE69800272D1 (de) 2000-10-05
TW388979B (en) 2000-05-01
EP0855741B1 (de) 2000-08-30
US5872384A (en) 1999-02-16
EP0855741A1 (de) 1998-07-29
JPH10209385A (ja) 1998-08-07
JP3383207B2 (ja) 2003-03-04

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition