FR2819953B1 - Commutateur de puissance a asservissement en di/dt - Google Patents

Commutateur de puissance a asservissement en di/dt

Info

Publication number
FR2819953B1
FR2819953B1 FR0100935A FR0100935A FR2819953B1 FR 2819953 B1 FR2819953 B1 FR 2819953B1 FR 0100935 A FR0100935 A FR 0100935A FR 0100935 A FR0100935 A FR 0100935A FR 2819953 B1 FR2819953 B1 FR 2819953B1
Authority
FR
France
Prior art keywords
power switch
controlled power
controlled
switch
power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0100935A
Other languages
English (en)
Other versions
FR2819953A1 (fr
Inventor
Robert Pezzani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR0100935A priority Critical patent/FR2819953B1/fr
Priority to KR1020027012635A priority patent/KR20030016241A/ko
Priority to CNB028001532A priority patent/CN1279616C/zh
Priority to US10/470,024 priority patent/US7432549B2/en
Priority to PCT/FR2002/000259 priority patent/WO2002059971A1/fr
Priority to EP02700368A priority patent/EP1358677A1/fr
Publication of FR2819953A1 publication Critical patent/FR2819953A1/fr
Application granted granted Critical
Publication of FR2819953B1 publication Critical patent/FR2819953B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electronic Switches (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
FR0100935A 2001-01-24 2001-01-24 Commutateur de puissance a asservissement en di/dt Expired - Fee Related FR2819953B1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR0100935A FR2819953B1 (fr) 2001-01-24 2001-01-24 Commutateur de puissance a asservissement en di/dt
KR1020027012635A KR20030016241A (ko) 2001-01-24 2002-01-22 Ｄｉ/ｄｔ 서보 파워 스위치
CNB028001532A CN1279616C (zh) 2001-01-24 2002-01-22 di/dt控制的电源开关
US10/470,024 US7432549B2 (en) 2001-01-24 2002-01-22 Di/dt servo power switches
PCT/FR2002/000259 WO2002059971A1 (fr) 2001-01-24 2002-01-22 Commutateur de puissance a asservissement en di/dt
EP02700368A EP1358677A1 (fr) 2001-01-24 2002-01-22 Commutateur de puissance a asservissement en di/dt

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0100935A FR2819953B1 (fr) 2001-01-24 2001-01-24 Commutateur de puissance a asservissement en di/dt

Publications (2)

Publication Number Publication Date
FR2819953A1 FR2819953A1 (fr) 2002-07-26
FR2819953B1 true FR2819953B1 (fr) 2003-06-13

Family

ID=8859176

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0100935A Expired - Fee Related FR2819953B1 (fr) 2001-01-24 2001-01-24 Commutateur de puissance a asservissement en di/dt

Country Status (6)

Country Link
US (1) US7432549B2 (fr)
EP (1) EP1358677A1 (fr)
KR (1) KR20030016241A (fr)
CN (1) CN1279616C (fr)
FR (1) FR2819953B1 (fr)
WO (1) WO2002059971A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107093621A (zh) * 2016-02-18 2017-08-25 比亚迪股份有限公司 半导体功率器件及其形成方法
CN112430611A (zh) * 2020-11-30 2021-03-02 华南理工大学 一种经优化的玉米赤霉烯酮降解酶zhd-p编码基因、重组菌体、表面展示体系与应用

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1475990A (en) * 1973-06-09 1977-06-10 Cav Ltd Dc motor systems
JPS59181046A (ja) * 1983-03-31 1984-10-15 Toshiba Corp 半導体集積回路
US4628438A (en) * 1983-12-16 1986-12-09 Control Concepts Corporation Power converter apparatus and method employing plural branches
FR2693035B1 (fr) * 1992-06-30 1994-09-30 Sgs Thomson Microelectronics Diode de protection pour composant semiconducteur vertical.
JP2570990B2 (ja) * 1993-10-29 1997-01-16 日本電気株式会社 半導体集積回路
JPH09260592A (ja) * 1996-03-19 1997-10-03 Fuji Electric Co Ltd 集積回路
JPH09312347A (ja) * 1996-05-24 1997-12-02 Hitachi Ltd Ｍｉｓ型半導体装置
US6127746A (en) * 1996-10-21 2000-10-03 International Rectifier Corp. Method of controlling the switching DI/DT and DV/DT of a MOS-gated power transistor
US5872384A (en) * 1997-01-17 1999-02-16 Lucent Technologies Inc. Component arrangement having magnetic field controlled transistor
JPH10247718A (ja) * 1997-03-04 1998-09-14 Fuji Electric Co Ltd 電流検知部付き縦型半導体素子
US6837438B1 (en) * 1998-10-30 2005-01-04 Hitachi Maxell, Ltd. Non-contact information medium and communication system utilizing the same
JP2001084343A (ja) * 1999-09-16 2001-03-30 Toshiba Corp 非接触ｉｃカード及びｉｃカード通信システム
US6326648B1 (en) * 1999-12-20 2001-12-04 Stmicroelectronics S.A. Power switch with a controlled DI/DT

Also Published As

Publication number Publication date
EP1358677A1 (fr) 2003-11-05
WO2002059971A1 (fr) 2002-08-01
KR20030016241A (ko) 2003-02-26
CN1455957A (zh) 2003-11-12
US7432549B2 (en) 2008-10-07
FR2819953A1 (fr) 2002-07-26
CN1279616C (zh) 2006-10-11
US20040056303A1 (en) 2004-03-25

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Legal Events

Date Code Title Description
ST Notification of lapse