DE69739267D1 - Methode und Schaltung zur Verbesserung der Eigenschaften eines ESD-Schutzes für integrierte Halbleiterschaltungen - Google Patents

Methode und Schaltung zur Verbesserung der Eigenschaften eines ESD-Schutzes für integrierte Halbleiterschaltungen

Info

Publication number
DE69739267D1
DE69739267D1 DE69739267T DE69739267T DE69739267D1 DE 69739267 D1 DE69739267 D1 DE 69739267D1 DE 69739267 T DE69739267 T DE 69739267T DE 69739267 T DE69739267 T DE 69739267T DE 69739267 D1 DE69739267 D1 DE 69739267D1
Authority
DE
Germany
Prior art keywords
improving
properties
circuit
integrated circuits
semiconductor integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69739267T
Other languages
German (de)
English (en)
Inventor
Paolo Colombo
Emilio Camerlenghi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Application granted granted Critical
Publication of DE69739267D1 publication Critical patent/DE69739267D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/60—Lateral BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/711—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using bipolar transistors as protective elements
DE69739267T 1997-12-31 1997-12-31 Methode und Schaltung zur Verbesserung der Eigenschaften eines ESD-Schutzes für integrierte Halbleiterschaltungen Expired - Lifetime DE69739267D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP97830742A EP0932203B1 (en) 1997-12-31 1997-12-31 Method and circuit for improving the performances of an ESD protection on semiconductor circuit structures

Publications (1)

Publication Number Publication Date
DE69739267D1 true DE69739267D1 (de) 2009-04-02

Family

ID=8230941

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69739267T Expired - Lifetime DE69739267D1 (de) 1997-12-31 1997-12-31 Methode und Schaltung zur Verbesserung der Eigenschaften eines ESD-Schutzes für integrierte Halbleiterschaltungen

Country Status (4)

Country Link
US (2) US6242793B1 (enExample)
EP (1) EP0932203B1 (enExample)
JP (2) JPH11274166A (enExample)
DE (1) DE69739267D1 (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6770564B1 (en) * 1998-07-29 2004-08-03 Denso Corporation Method of etching metallic thin film on thin film resistor
DE19917155C1 (de) * 1999-04-16 2000-06-21 Bosch Gmbh Robert Schutzvorrichtung gegen elektrostatische Entladungen
EP1073119B1 (en) * 1999-07-30 2004-05-26 STMicroelectronics S.r.l. ESD protection device for semiconductor integrated circuit structure
DE10028008A1 (de) 2000-06-06 2001-12-13 Bosch Gmbh Robert Schutzvorrichtung gegen elektrostatische Entladungen
JP2002324846A (ja) * 2001-04-25 2002-11-08 Sanken Electric Co Ltd 半導体装置及びその製造方法
US6589833B2 (en) * 2001-12-03 2003-07-08 Nano Silicon Pte Ltd. ESD parasitic bipolar transistors with high resistivity regions in the collector
US7052939B2 (en) * 2002-11-26 2006-05-30 Freescale Semiconductor, Inc. Structure to reduce signal cross-talk through semiconductor substrate for system on chip applications
SE0300924D0 (sv) * 2003-03-28 2003-03-28 Infineon Technologies Wireless A method to provide a triple well in an epitaxially based CMOS or BiCMOS process
US7138701B2 (en) * 2003-10-02 2006-11-21 International Business Machines Corporation Electrostatic discharge protection networks for triple well semiconductor devices
DE102004007972B3 (de) * 2004-02-18 2005-09-01 Infineon Technologies Ag Halbleiterstruktur zum Schutz von integrierten Schaltungen vor ESD-Pulsen
US7282771B2 (en) * 2005-01-25 2007-10-16 International Business Machines Corporation Structure and method for latchup suppression
US7875933B2 (en) * 2005-03-29 2011-01-25 Infineon Technologies Ag Lateral bipolar transistor with additional ESD implant
US7268398B1 (en) * 2006-08-14 2007-09-11 National Semiconductor Corporation ESD protection cell with active pwell resistance control
JP5252830B2 (ja) * 2007-05-10 2013-07-31 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 半導体集積回路
US8114684B2 (en) * 2009-03-02 2012-02-14 Robert Bosch Gmbh Vertical hall effect sensor with current focus
US8885309B2 (en) 2011-03-24 2014-11-11 Fairchild Semiconductor Corporation Undervoltage protection system
US20120320481A1 (en) * 2011-06-16 2012-12-20 Fairchild Semiconductor Corporation Protection System
JP2013191767A (ja) * 2012-03-14 2013-09-26 Sharp Corp Ｅｓｄ保護トランジスタ素子
KR101975608B1 (ko) * 2013-06-12 2019-05-08 매그나칩 반도체 유한회사 고전압용 esd 트랜지스터 및 그 정전기 보호 회로
JP6428592B2 (ja) 2015-12-10 2018-11-28 株式会社デンソー 燃料噴射制御装置
JPWO2023189857A1 (enExample) * 2022-03-29 2023-10-05

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3199808B2 (ja) * 1991-05-14 2001-08-20 セイコーインスツルメンツ株式会社 半導体集積回路装置
IT1253682B (it) * 1991-09-12 1995-08-22 Sgs Thomson Microelectronics Struttura di protezione dalle scariche elettrostatiche
US5268588A (en) * 1992-09-30 1993-12-07 Texas Instruments Incorporated Semiconductor structure for electrostatic discharge protection
JP3073382B2 (ja) * 1993-12-27 2000-08-07 シャープ株式会社 半導体装置とその製造方法
US5545910A (en) * 1994-04-13 1996-08-13 Winbond Electronics Corp. ESD proctection device
US5545909A (en) * 1994-10-19 1996-08-13 Siliconix Incorporated Electrostatic discharge protection device for integrated circuit
KR100190008B1 (ko) * 1995-12-30 1999-06-01 윤종용 반도체 장치의 정전하 보호 장치

Also Published As

Publication number Publication date
US20010011751A1 (en) 2001-08-09
EP0932203B1 (en) 2009-02-18
US6242793B1 (en) 2001-06-05
EP0932203A1 (en) 1999-07-28
US6372597B2 (en) 2002-04-16
JPH11274166A (ja) 1999-10-08
JP2009060117A (ja) 2009-03-19

Similar Documents

Publication Publication Date Title
DE69739267D1 (de) Methode und Schaltung zur Verbesserung der Eigenschaften eines ESD-Schutzes für integrierte Halbleiterschaltungen
DE69904320D1 (de) On-chip schaltung und verfahren zur speicherschaltungs-prüfung
DE19882396T1 (de) Verfahren zur Verbesserung elektromagnetischer Strahlungseigenschaften verkapselter Schaltungen und damit in Beziehung stehende Vorrichtungen
DE69934581D1 (de) Kompositschaltungsschutzvorrichtung und verfahren zur herstellung derselben
DE60226689D1 (de) Verfahren und Vorrichtung zur Symmetrierung der Leckströme von aktiven Kondensatoren
GB2364837B (en) Mixed-signal circuitry and integrated circuit devices
DE50001613D1 (de) Verfahren und vorrichtung zur symmetrierung der verlustleistung mehrerer parallel geschalteter kaskodenschaltungen
DE69939012D1 (de) Verfahren und schaltung zur kompensation der nicht-linearität von kondensatoren
DE69432016D1 (de) Verfahren zur Herstellung integrierter Schaltungen und erzeugte Halbleiterscheibe
GB0220079D0 (en) Semiconductor integrated circuit and its layout method
DE60210900D1 (de) Prüfschaltung und integrierte Halbleiterschaltung zur Durchführung der Überprüfung von Knotenverbindungen
DE69936677D1 (de) Schutzstruktur für eine integrierte Schaltungshalbleiteranordnung gegen elektrostatische Entladungen
DE69708021D1 (de) Baugruppen aus Substraten und elektronischen Bauteilen
DE50001023D1 (de) Verfahren und schaltungsanordnung zur kontrastverbesserung eines bildes
DE69838683D1 (de) Halbleiterbauelement und verfahren zur herstellung
DE50207002D1 (de) Schaltungsanordnung und verfahren zur temperaturkompensation
DE69927143T2 (de) Halbleiteranordnung und verfahren zur herstellung
SG73599A1 (en) Semiconductor device and method of manufacturing the same and electronic apparatus
KR960008335A (ko) 반도체 집적회로의 정지시 전류측정법 및 그에 적합한 반도체 회로
DE60043646D1 (de) SiC-MOSFET für Leistungsschalter und Methode zur Herstellung desselben
DE50000925D1 (de) Vorrichtung und verfahren für den eingebauten selbsttest einer elektronischen schaltung
FR2718569B1 (fr) Circuit de protection assurant la protection des circuits intégrés contre les décharges électrostatiques (ESD).
SG114549A1 (en) Systems and methods for facilitating testing of pad drivers of integrated circuits
SG74105A1 (en) Semiconductor device method of manufacturing the same circuit board and electronic instrument
DE60037562D1 (de) Statische Induktion Halbleiteranordnung und Verfahren zur Herstellung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition