DE69738700D1 - Silizium auf Isolator-Substrat zum Herstellen von Transistoren und Verfahren zum Vorbereiten eines derartigen Substrats - Google Patents

Silizium auf Isolator-Substrat zum Herstellen von Transistoren und Verfahren zum Vorbereiten eines derartigen Substrats

Info

Publication number
DE69738700D1
DE69738700D1 DE69738700T DE69738700T DE69738700D1 DE 69738700 D1 DE69738700 D1 DE 69738700D1 DE 69738700 T DE69738700 T DE 69738700T DE 69738700 T DE69738700 T DE 69738700T DE 69738700 D1 DE69738700 D1 DE 69738700D1
Authority
DE
Germany
Prior art keywords
substrate
silicon
preparing
manufacturing transistors
insulator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69738700T
Other languages
English (en)
Inventor
Simon Deleonibus
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Application granted granted Critical
Publication of DE69738700D1 publication Critical patent/DE69738700D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76294—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using selective deposition of single crystal silicon, i.e. SEG techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24851—Intermediate layer is discontinuous or differential
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24926—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including ceramic, glass, porcelain or quartz layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Element Separation (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE69738700T 1996-03-20 1997-03-18 Silizium auf Isolator-Substrat zum Herstellen von Transistoren und Verfahren zum Vorbereiten eines derartigen Substrats Expired - Lifetime DE69738700D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9603448A FR2746544B1 (fr) 1996-03-20 1996-03-20 Substrat de type silicium sur isolant pour la fabrication de transistors et procede de preparation d'un tel substrat

Publications (1)

Publication Number Publication Date
DE69738700D1 true DE69738700D1 (de) 2008-07-03

Family

ID=9490343

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69738700T Expired - Lifetime DE69738700D1 (de) 1996-03-20 1997-03-18 Silizium auf Isolator-Substrat zum Herstellen von Transistoren und Verfahren zum Vorbereiten eines derartigen Substrats

Country Status (7)

Country Link
US (1) US5897939A (de)
EP (1) EP0797252B1 (de)
JP (1) JP4065580B2 (de)
KR (1) KR970067611A (de)
CA (1) CA2200264A1 (de)
DE (1) DE69738700D1 (de)
FR (1) FR2746544B1 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5796671A (en) 1996-03-01 1998-08-18 Wahlstrom; Sven E. Dynamic random access memory
GB2352876B (en) * 1996-03-01 2001-03-21 Sven E Wahlstrom Dynamic random access memory
US6331181B1 (en) * 1998-12-08 2001-12-18 Intuitive Surgical, Inc. Surgical robotic tools, data architecture, and use
US6080612A (en) * 1998-05-20 2000-06-27 Sharp Laboratories Of America, Inc. Method of forming an ultra-thin SOI electrostatic discharge protection device
US6956268B2 (en) * 2001-05-18 2005-10-18 Reveo, Inc. MEMS and method of manufacturing MEMS
US7045878B2 (en) * 2001-05-18 2006-05-16 Reveo, Inc. Selectively bonded thin film layer and substrate layer for processing of useful devices
US7163826B2 (en) * 2001-09-12 2007-01-16 Reveo, Inc Method of fabricating multi layer devices on buried oxide layer substrates
US6875671B2 (en) * 2001-09-12 2005-04-05 Reveo, Inc. Method of fabricating vertical integrated circuits
US7033910B2 (en) * 2001-09-12 2006-04-25 Reveo, Inc. Method of fabricating multi layer MEMS and microfluidic devices
US20090065471A1 (en) * 2003-02-10 2009-03-12 Faris Sadeg M Micro-nozzle, nano-nozzle, manufacturing methods therefor, applications therefor
KR100673133B1 (ko) * 2006-01-23 2007-01-22 주식회사 하이닉스반도체 반도체 소자의 제조 방법
CN111129054B (zh) * 2019-12-23 2023-09-05 上海集成电路研发中心有限公司 一种cmos图像传感器结构及制造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2563377B1 (fr) * 1984-04-19 1987-01-23 Commissariat Energie Atomique Procede de fabrication d'une couche isolante enterree dans un substrat semi-conducteur, par implantation ionique
US4601779A (en) * 1985-06-24 1986-07-22 International Business Machines Corporation Method of producing a thin silicon-on-insulator layer
JPH0738435B2 (ja) * 1986-06-13 1995-04-26 松下電器産業株式会社 半導体装置の製造方法
JPH0279445A (ja) * 1988-09-14 1990-03-20 Oki Electric Ind Co Ltd 素子分離領域の形成方法
US5244827A (en) * 1991-10-31 1993-09-14 Sgs-Thomson Microelectronics, Inc. Method for planarized isolation for cmos devices

Also Published As

Publication number Publication date
EP0797252A2 (de) 1997-09-24
FR2746544A1 (fr) 1997-09-26
JP4065580B2 (ja) 2008-03-26
EP0797252B1 (de) 2008-05-21
EP0797252A3 (de) 1997-11-26
JPH1022398A (ja) 1998-01-23
CA2200264A1 (en) 1997-09-20
KR970067611A (ko) 1997-10-13
US5897939A (en) 1999-04-27
FR2746544B1 (fr) 1998-05-15

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