DE69729905D1 - Thyristor mit reduzierter Minoritätsträger-Lebensdauer und Verfahren zur Herstellung desselben - Google Patents

Thyristor mit reduzierter Minoritätsträger-Lebensdauer und Verfahren zur Herstellung desselben

Info

Publication number
DE69729905D1
DE69729905D1 DE69729905T DE69729905T DE69729905D1 DE 69729905 D1 DE69729905 D1 DE 69729905D1 DE 69729905 T DE69729905 T DE 69729905T DE 69729905 T DE69729905 T DE 69729905T DE 69729905 D1 DE69729905 D1 DE 69729905D1
Authority
DE
Germany
Prior art keywords
thyristor
producing
same
minority carrier
carrier life
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69729905T
Other languages
English (en)
Other versions
DE69729905T2 (de
Inventor
Hajime Akiyama
Kenichi Honda
Yousuke Morita
Masahito Yoshikawa
Takeshi Ohshima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Japan Atomic Energy Agency
Original Assignee
Japan Atomic Energy Research Institute
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Atomic Energy Research Institute, Mitsubishi Electric Corp filed Critical Japan Atomic Energy Research Institute
Application granted granted Critical
Publication of DE69729905D1 publication Critical patent/DE69729905D1/de
Publication of DE69729905T2 publication Critical patent/DE69729905T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1012—Base regions of thyristors
    • H01L29/1016—Anode base regions of thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
    • H01L29/32—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
DE69729905T 1996-03-18 1997-03-17 Thyristor mit reduzierter Minoritätsträger-Lebensdauer und Verfahren zur Herstellung desselben Expired - Lifetime DE69729905T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP6136496 1996-03-18
JP06136496A JP3394383B2 (ja) 1996-03-18 1996-03-18 サイリスタの製造方法およびサイリスタ

Publications (2)

Publication Number Publication Date
DE69729905D1 true DE69729905D1 (de) 2004-08-26
DE69729905T2 DE69729905T2 (de) 2005-08-25

Family

ID=13169046

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69729905T Expired - Lifetime DE69729905T2 (de) 1996-03-18 1997-03-17 Thyristor mit reduzierter Minoritätsträger-Lebensdauer und Verfahren zur Herstellung desselben

Country Status (4)

Country Link
US (1) US6163040A (de)
EP (1) EP0797257B1 (de)
JP (1) JP3394383B2 (de)
DE (1) DE69729905T2 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4267083B2 (ja) 1998-06-01 2009-05-27 三菱電機株式会社 ダイオード
WO2000016406A1 (fr) * 1998-09-10 2000-03-23 Mitsubishi Denki Kabushiki Kaisha Dispositif semi-conducteur
DE10048437A1 (de) * 2000-09-29 2002-04-18 Eupec Gmbh & Co Kg Verfahren zum Herstellen eines Körpers aus Halbleitermaterial mit reduzierter mittlerer freier Weglänge und mit dem Verfahren hergestellter Körper
DE10048345A1 (de) * 2000-09-29 2002-05-16 Eupec Gmbh & Co Kg Körper aus Halbleitermaterial mit reduzierter mittlerer freier Weglänge
JP4539011B2 (ja) * 2002-02-20 2010-09-08 富士電機システムズ株式会社 半導体装置
JP2004288680A (ja) 2003-03-19 2004-10-14 Mitsubishi Electric Corp 圧接型半導体装置
DE102004004045B4 (de) * 2004-01-27 2009-04-02 Infineon Technologies Ag Halbleiterbauelement mit temporärem Feldstoppbereich und Verfahren zu dessen Herstellung
JP5358189B2 (ja) * 2006-01-20 2013-12-04 インフィネオン テクノロジーズ オーストリア アクチエンゲゼルシャフト 酸素含有半導体ウェハの処理方法
DE102006046844B4 (de) * 2006-10-02 2013-08-01 Infineon Technologies Austria Ag Leistungshalbleiterbauelement mit Feldstoppzone und Verfahren zur Herstellung eines solchen Leistungshalbleiterbauelements
US7687891B2 (en) * 2007-05-14 2010-03-30 Infineon Technologies Ag Diode having one or more zones of a first conductivity type and one or more zones of a second conductivity type each located within a layer of the second conductivity type
CN102779840B (zh) * 2012-07-18 2014-10-15 电子科技大学 一种具有终端深能级杂质层的igbt
CN102779848A (zh) * 2012-07-18 2012-11-14 电子科技大学 一种具有深能级掺杂元素漂移区的晶闸管
JP2017183403A (ja) * 2016-03-29 2017-10-05 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4056408A (en) * 1976-03-17 1977-11-01 Westinghouse Electric Corporation Reducing the switching time of semiconductor devices by nuclear irradiation
DE3117202A1 (de) * 1981-04-30 1982-11-18 Brown, Boveri & Cie Ag, 6800 Mannheim Verfahren zum einstellen der lebensdauer der minoritaetsladungstraeger in halbleiterschaltern mit protonenstrahlen
US4752818A (en) * 1985-09-28 1988-06-21 Kabushiki Kaisha Toyota Chuo Kenkyusho Semiconductor device with multiple recombination center layers
JPS649658A (en) * 1987-07-01 1989-01-12 Mitsubishi Electric Corp Gto thyristor
US5510274A (en) * 1987-08-19 1996-04-23 Mitsubishi Denki Kabushiki Kaisha Method of controlling a carrier lifetime in a semiconductor switching device
JPH07107935B2 (ja) * 1988-02-04 1995-11-15 株式会社東芝 半導体装置
US5182626A (en) * 1989-09-20 1993-01-26 Mitsubishi Denki Kabushiki Kaisha Insulated gate bipolar transistor and method of manufacturing the same
JPH03245569A (ja) * 1990-02-23 1991-11-01 Toshiba Corp 半導体装置の製造方法
US5160958A (en) * 1990-03-14 1992-11-03 Minolta Camera Co., Ltd. Image projecting apparatus
JP3210013B2 (ja) * 1991-03-27 2001-09-17 シーメンス アクチエンゲゼルシヤフト 調整可能なブレークオーバ電圧を有するサイリスタおよびその製造方法
DE4223914C2 (de) * 1992-06-30 1996-01-25 Fraunhofer Ges Forschung Verfahren zum Herstellen eines vertikalen Leistungsbauelementes mit reduzierter Minoritätsträgerlebensdauer in dessen Driftstrecke
US5981981A (en) * 1993-10-13 1999-11-09 Mitsubishi Denki Kabushiki Kaisha Semiconductor device including a bipolar structure
JP2883017B2 (ja) * 1995-02-20 1999-04-19 ローム株式会社 半導体装置およびその製法

Also Published As

Publication number Publication date
JP3394383B2 (ja) 2003-04-07
DE69729905T2 (de) 2005-08-25
EP0797257A3 (de) 1999-08-18
EP0797257A2 (de) 1997-09-24
JPH09260640A (ja) 1997-10-03
US6163040A (en) 2000-12-19
EP0797257B1 (de) 2004-07-21

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