DE69729429D1 - Verfahren zur Herstellung eines SiO2-Films mit niedrigem Brechungsindex - Google Patents

Verfahren zur Herstellung eines SiO2-Films mit niedrigem Brechungsindex

Info

Publication number
DE69729429D1
DE69729429D1 DE69729429T DE69729429T DE69729429D1 DE 69729429 D1 DE69729429 D1 DE 69729429D1 DE 69729429 T DE69729429 T DE 69729429T DE 69729429 T DE69729429 T DE 69729429T DE 69729429 D1 DE69729429 D1 DE 69729429D1
Authority
DE
Germany
Prior art keywords
producing
refractive index
low refractive
sio2 film
index sio2
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69729429T
Other languages
English (en)
Other versions
DE69729429T2 (de
Inventor
Koji Ichimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dai Nippon Printing Co Ltd
Original Assignee
Dai Nippon Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dai Nippon Printing Co Ltd filed Critical Dai Nippon Printing Co Ltd
Application granted granted Critical
Publication of DE69729429D1 publication Critical patent/DE69729429D1/de
Publication of DE69729429T2 publication Critical patent/DE69729429T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11—Anti-reflection coatings
    • G02B1/111—Anti-reflection coatings using layers comprising organic materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31652—Of asbestos
    • Y10T428/31663—As siloxane, silicone or silane
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31652—Of asbestos
    • Y10T428/31667—Next to addition polymer from unsaturated monomers, or aldehyde or ketone condensation product
DE1997629429 1996-12-18 1997-12-17 Verfahren zur Herstellung eines SiO2-Films mit niedrigem Brechungsindex Expired - Fee Related DE69729429T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP35414196 1996-12-18
JP35414196 1996-12-18
JP31599297A JP3773340B2 (ja) 1996-12-18 1997-10-31 低屈折率ＳｉＯ２ 膜及びその製造方法
JP31599297 1997-10-31

Publications (2)

Publication Number Publication Date
DE69729429D1 true DE69729429D1 (de) 2004-07-15
DE69729429T2 DE69729429T2 (de) 2005-06-16

Family

ID=26568491

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1997629429 Expired - Fee Related DE69729429T2 (de) 1996-12-18 1997-12-17 Verfahren zur Herstellung eines SiO2-Films mit niedrigem Brechungsindex

Country Status (4)

Country Link
US (2) US20020001725A1 (de)
EP (1) EP0849374B1 (de)
JP (1) JP3773340B2 (de)
DE (1) DE69729429T2 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6054379A (en) 1998-02-11 2000-04-25 Applied Materials, Inc. Method of depositing a low k dielectric with organo silane
US6593247B1 (en) * 1998-02-11 2003-07-15 Applied Materials, Inc. Method of depositing low k films using an oxidizing plasma
US6340435B1 (en) 1998-02-11 2002-01-22 Applied Materials, Inc. Integrated low K dielectrics and etch stops
JP2000121804A (ja) * 1998-10-09 2000-04-28 Sekisui Chem Co Ltd 反射防止フィルム
JP2002103507A (ja) * 2000-09-29 2002-04-09 Dainippon Printing Co Ltd シリカ層、及びシリカ層を用いた反射防止フィルム
DE102005007825B4 (de) 2005-01-10 2015-09-17 Interpane Entwicklungs-Und Beratungsgesellschaft Mbh Verfahren zur Herstellung einer reflexionsmindernden Beschichtung, reflexionsmindernde Schicht auf einem transparenten Substrat sowie Verwendung einer derartigen Schicht
JP4807195B2 (ja) * 2006-09-08 2011-11-02 旭硝子株式会社 低屈折率膜の製膜方法および低屈折率膜を有する物品
US20100104996A1 (en) * 2007-06-25 2010-04-29 Sharp Kabushiki Kaisha Baking apparatus
US20090274930A1 (en) * 2008-04-30 2009-11-05 Guardian Industries Corp. Alkaline earth fluoride coatings deposited via combustion deposition
FR2985255B1 (fr) * 2011-12-28 2015-08-07 Ecole Polytech Article revetu d'un revetement interferentiel ayant des proprietes stables dans le temps.
US9025100B2 (en) 2012-11-30 2015-05-05 Apple Inc. Display with shielding antireflection layer
FR3007024A1 (fr) * 2013-06-14 2014-12-19 Essilor Int Article revetu d'une couche de nature silico-organique ameliorant les performances d'un revetement externe
JP6508053B2 (ja) * 2013-09-27 2019-05-08 住友化学株式会社 積層フィルム、有機エレクトロルミネッセンス装置、光電変換装置および液晶ディスプレイ
EP3693765B1 (de) * 2019-02-05 2023-04-19 Essilor International Mit einer antireflexionsschicht mit verbesserten optischen eigenschaften beschichteter artikel
EP3693766A1 (de) * 2019-02-05 2020-08-12 Corporation de L'Ecole Polytechnique de Montreal Mit einer schicht mit niedrigem brechungsindex auf basis von fluorierten organosiliciumverbindungen beschichteter artikel

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4419386A (en) * 1981-09-14 1983-12-06 Gordon Roy G Non-iridescent glass structures
US5759643A (en) * 1987-01-16 1998-06-02 Seiko Epson Corporation Polarizing plate and method of production
US5264286A (en) * 1988-03-03 1993-11-23 Asahi Glass Company Ltd. Laminated glass structure
CA2054094C (en) * 1990-10-25 1999-12-21 Kazufumi Ogawa Chemically adsorbed monomolecular lamination film
WO1992020833A1 (en) * 1991-05-17 1992-11-26 Lam Research Corporation A PROCESS FOR DEPOSITING A SIOx FILM HAVING REDUCED INTRINSIC STRESS AND/OR REDUCED HYDROGEN CONTENT
JP2699695B2 (ja) * 1991-06-07 1998-01-19 日本電気株式会社 化学気相成長法
DE69331291T2 (de) * 1992-11-13 2002-08-08 Energy Conversion Devices Inc Verfahren zur Herstellung einer Sperrbeschichtung mittels plasmaunterstütztem CVD
US5364666A (en) * 1993-09-23 1994-11-15 Becton, Dickinson And Company Process for barrier coating of plastic objects
JPH0790589A (ja) * 1993-09-24 1995-04-04 G T C:Kk シリコン酸化膜の形成方法
US5909314A (en) * 1994-02-15 1999-06-01 Dai Nippon Printing Co., Ltd. Optical functional materials and process for producing the same
US5563105A (en) * 1994-09-30 1996-10-08 International Business Machines Corporation PECVD method of depositing fluorine doped oxide using a fluorine precursor containing a glass-forming element
EP0724286A1 (de) * 1995-01-25 1996-07-31 Applied Materials, Inc. Verfahren zur Herstellung eines Dünnfilms aus Siliziumoxid für eine Halbleitervorrichtung
US5571576A (en) * 1995-02-10 1996-11-05 Watkins-Johnson Method of forming a fluorinated silicon oxide layer using plasma chemical vapor deposition
JPH09203817A (ja) * 1996-01-26 1997-08-05 Toyo Commun Equip Co Ltd 光導波路カプラ
SG53005A1 (en) * 1996-07-03 1998-09-28 Novellus Systems Inc Method for depositing substituted fluorcarbon polymeric layers
DE19650784A1 (de) 1996-12-06 1998-06-10 Bosch Gmbh Robert Vorrichtung für eine Kraftstoffversorgungsanlage

Also Published As

Publication number Publication date
US20020001725A1 (en) 2002-01-03
DE69729429T2 (de) 2005-06-16
US7348041B2 (en) 2008-03-25
JP3773340B2 (ja) 2006-05-10
US20040157061A1 (en) 2004-08-12
EP0849374B1 (de) 2004-06-09
EP0849374A2 (de) 1998-06-24
EP0849374A3 (de) 1999-06-30
JPH10230561A (ja) 1998-09-02

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee