DE69721217D1 - Gerät mit schaltungselement und übertragungsleitung - Google Patents

Gerät mit schaltungselement und übertragungsleitung

Info

Publication number
DE69721217D1
DE69721217D1 DE69721217T DE69721217T DE69721217D1 DE 69721217 D1 DE69721217 D1 DE 69721217D1 DE 69721217 T DE69721217 T DE 69721217T DE 69721217 T DE69721217 T DE 69721217T DE 69721217 D1 DE69721217 D1 DE 69721217D1
Authority
DE
Germany
Prior art keywords
transmission line
circuit element
circuit
transmission
line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69721217T
Other languages
English (en)
Other versions
DE69721217T2 (de
Inventor
Gerardus Baltus
Ronald Dekker
Lukas Leijten
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP BV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Application granted granted Critical
Publication of DE69721217D1 publication Critical patent/DE69721217D1/de
Publication of DE69721217T2 publication Critical patent/DE69721217T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H01L2924/13033—TRIAC - Triode for Alternating Current - A bidirectional switching device containing two thyristor structures with common gate contact
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Waveguides (AREA)
  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
DE69721217T 1996-09-27 1997-07-15 Gerät mit schaltungselement und übertragungsleitung Expired - Lifetime DE69721217T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP96202711 1996-09-27
PCT/IB1997/000873 WO1998013893A1 (en) 1996-09-27 1997-07-15 Device with circuit element and transmission line

Publications (2)

Publication Number Publication Date
DE69721217D1 true DE69721217D1 (de) 2003-05-28
DE69721217T2 DE69721217T2 (de) 2003-12-11

Family

ID=8224441

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69721217T Expired - Lifetime DE69721217T2 (de) 1996-09-27 1997-07-15 Gerät mit schaltungselement und übertragungsleitung

Country Status (6)

Country Link
US (1) US6060968A (de)
EP (1) EP0864184B1 (de)
JP (1) JP3960560B2 (de)
KR (1) KR100641431B1 (de)
DE (1) DE69721217T2 (de)
WO (1) WO1998013893A1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3496752B2 (ja) * 1998-02-19 2004-02-16 シャープ株式会社 マイクロ波・ミリ波装置
US7414858B2 (en) * 2002-04-11 2008-08-19 Koninklijke Philips Electronics N.V. Method of manufacturing an electronic device
US6858943B1 (en) * 2003-03-25 2005-02-22 Sandia Corporation Release resistant electrical interconnections for MEMS devices
US20090151992A1 (en) * 2007-12-18 2009-06-18 Broadcom Corporation Formation and integration of passive structures using silicon and package substrate
JP7287185B2 (ja) * 2019-04-05 2023-06-06 株式会社村田製作所 電子部品、電子部品実装基板及び電子部品の製造方法
CN113224032B (zh) * 2021-04-22 2022-09-20 中国电子科技集团公司第二十九研究所 一种芯片倒装结构及制作方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5931042A (ja) * 1982-08-12 1984-02-18 Mitsubishi Electric Corp 高周波高出力半導体装置
US4916417A (en) * 1985-09-24 1990-04-10 Murata Mfg. Co., Ltd. Microstripline filter
US5115245A (en) * 1990-09-04 1992-05-19 Hughes Aircraft Company Single substrate microwave radar transceiver including flip-chip integrated circuits
US5138436A (en) * 1990-11-16 1992-08-11 Ball Corporation Interconnect package having means for waveguide transmission of rf signals
US5087896A (en) * 1991-01-16 1992-02-11 Hughes Aircraft Company Flip-chip MMIC oscillator assembly with off-chip coplanar waveguide resonant inductor
JPH06125208A (ja) * 1992-10-09 1994-05-06 Mitsubishi Electric Corp マイクロ波集積回路およびその製造方法
US5510758A (en) * 1993-04-07 1996-04-23 Matsushita Electric Industrial Co., Ltd. Multilayer microstrip wiring board with a semiconductor device mounted thereon via bumps
JPH0837190A (ja) * 1994-07-22 1996-02-06 Nec Corp 半導体装置
US5621366A (en) * 1994-08-15 1997-04-15 Motorola, Inc. High-Q multi-layer ceramic RF transmission line resonator
US5552752A (en) * 1995-06-02 1996-09-03 Hughes Aircraft Company Microwave vertical interconnect through circuit with compressible conductor

Also Published As

Publication number Publication date
KR19990071653A (ko) 1999-09-27
KR100641431B1 (ko) 2007-06-04
DE69721217T2 (de) 2003-12-11
EP0864184A1 (de) 1998-09-16
EP0864184B1 (de) 2003-04-23
WO1998013893A1 (en) 1998-04-02
JP3960560B2 (ja) 2007-08-15
JP2000501589A (ja) 2000-02-08
US6060968A (en) 2000-05-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: EISENFUEHR, SPEISER & PARTNER, 10178 BERLIN

8327 Change in the person/name/address of the patent owner

Owner name: NXP B.V., EINDHOVEN, NL