DE69720642T2 - Anordnung von lichtemittierenden Dioden und lichtemittierende Diode - Google Patents

Anordnung von lichtemittierenden Dioden und lichtemittierende Diode

Info

Publication number
DE69720642T2
DE69720642T2 DE69720642T DE69720642T DE69720642T2 DE 69720642 T2 DE69720642 T2 DE 69720642T2 DE 69720642 T DE69720642 T DE 69720642T DE 69720642 T DE69720642 T DE 69720642T DE 69720642 T2 DE69720642 T2 DE 69720642T2
Authority
DE
Germany
Prior art keywords
light emitting
arrangement
emitting diode
emitting diodes
diodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69720642T
Other languages
English (en)
Other versions
DE69720642D1 (de
Inventor
Mitsuhiko Ogihara
Yukio Nakamura
Masumi Taninaka
Hiroshi Hamano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Data Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Data Corp filed Critical Oki Data Corp
Publication of DE69720642D1 publication Critical patent/DE69720642D1/de
Application granted granted Critical
Publication of DE69720642T2 publication Critical patent/DE69720642T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Devices (AREA)
  • Light Receiving Elements (AREA)
DE69720642T 1996-10-28 1997-09-01 Anordnung von lichtemittierenden Dioden und lichtemittierende Diode Expired - Lifetime DE69720642T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28552896A JP3681236B2 (ja) 1996-10-28 1996-10-28 半導体装置

Publications (2)

Publication Number Publication Date
DE69720642D1 DE69720642D1 (de) 2003-05-15
DE69720642T2 true DE69720642T2 (de) 2003-12-24

Family

ID=17692707

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69720642T Expired - Lifetime DE69720642T2 (de) 1996-10-28 1997-09-01 Anordnung von lichtemittierenden Dioden und lichtemittierende Diode

Country Status (4)

Country Link
US (1) US5917227A (de)
EP (1) EP0838861B1 (de)
JP (1) JP3681236B2 (de)
DE (1) DE69720642T2 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3681306B2 (ja) * 1999-06-18 2005-08-10 沖電気工業株式会社 発光素子アレイ、ｌｅｄアレイ及び電子写真プリンタ
JP2001068729A (ja) * 1999-08-30 2001-03-16 Kyocera Corp Ｌｅｄアレイ
US6933546B2 (en) * 2003-03-17 2005-08-23 Freescale Semiconductor, Inc. Semiconductor component
WO2007018360A1 (en) 2005-08-09 2007-02-15 Seoul Opto Device Co., Ltd. Ac light emitting diode and method for fabricating the same
JP4735651B2 (ja) * 2008-02-28 2011-07-27 沖電気工業株式会社 半導体発光装置及びｌｅｄアレイ
JP4954180B2 (ja) * 2008-10-15 2012-06-13 株式会社沖データ 半導体装置、ｌｅｄプリントヘッドおよび画像形成装置
DE102010026518A1 (de) * 2010-07-08 2012-01-12 Osram Opto Semiconductors Gmbh Leuchtdiodenchip und Verfahren zur Herstellung eines Leuchtdiodenchips
CN102339913B (zh) * 2011-09-30 2013-06-19 映瑞光电科技(上海)有限公司 高压led器件及其制造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4335501A (en) * 1979-10-31 1982-06-22 The General Electric Company Limited Manufacture of monolithic LED arrays for electroluminescent display devices
US4482906A (en) * 1982-06-30 1984-11-13 International Business Machines Corporation Gallium aluminum arsenide integrated circuit structure using germanium
JPS63170142A (ja) * 1987-01-09 1988-07-14 Shinko Electric Co Ltd 航空機用荷役作業車両
FR2620863B1 (fr) * 1987-09-22 1989-12-01 Thomson Csf Dispositif optoelectronique a base de composes iii-v sur substrat silicium
US4956683A (en) * 1988-03-14 1990-09-11 Polaroid Corporation Isolation of p-n junctions
JPH0817229B2 (ja) * 1988-03-31 1996-02-21 サンケン電気株式会社 半導体装置
NL8901400A (nl) * 1989-06-02 1991-01-02 Philips Nv Halfgeleiderinrichting met een stralingsgevoelig element.
JPH03160714A (ja) * 1989-11-20 1991-07-10 Fujitsu Ltd 半導体装置及びその製造方法
DE69132934T2 (de) * 1990-05-23 2002-08-29 Uniphase Opto Holdings Inc Strahlungsemittierende Halbleiteranordnung und Verfahren zum Herstellen derselben
US5453386A (en) * 1994-05-09 1995-09-26 Motorola, Inc. Method of fabrication of implanted LED array

Also Published As

Publication number Publication date
EP0838861B1 (de) 2003-04-09
JP3681236B2 (ja) 2005-08-10
DE69720642D1 (de) 2003-05-15
US5917227A (en) 1999-06-29
EP0838861A3 (de) 1999-09-29
EP0838861A2 (de) 1998-04-29
JPH10135513A (ja) 1998-05-22

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