DE69715909T2 - Mos-anordnung mit gate-substrat anschluss die auf einem soi-substrat gebildet wird - Google Patents

Mos-anordnung mit gate-substrat anschluss die auf einem soi-substrat gebildet wird

Info

Publication number
DE69715909T2
DE69715909T2 DE69715909T DE69715909T DE69715909T2 DE 69715909 T2 DE69715909 T2 DE 69715909T2 DE 69715909 T DE69715909 T DE 69715909T DE 69715909 T DE69715909 T DE 69715909T DE 69715909 T2 DE69715909 T2 DE 69715909T2
Authority
DE
Germany
Prior art keywords
substrate
gate
connection
mos arrangement
soi substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69715909T
Other languages
English (en)
Other versions
DE69715909D1 (de
Inventor
S Fechner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell Inc
Original Assignee
Honeywell Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Inc filed Critical Honeywell Inc
Application granted granted Critical
Publication of DE69715909D1 publication Critical patent/DE69715909D1/de
Publication of DE69715909T2 publication Critical patent/DE69715909T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thin Film Transistor (AREA)
DE69715909T 1996-12-19 1997-11-12 Mos-anordnung mit gate-substrat anschluss die auf einem soi-substrat gebildet wird Expired - Fee Related DE69715909T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/770,616 US5753955A (en) 1996-12-19 1996-12-19 MOS device having a gate to body connection with a body injection current limiting feature for use on silicon on insulator substrates
PCT/US1997/021012 WO1998027598A1 (en) 1996-12-19 1997-11-12 Mos device having a gate to body connection formed on a soi substrate

Publications (2)

Publication Number Publication Date
DE69715909D1 DE69715909D1 (de) 2002-10-31
DE69715909T2 true DE69715909T2 (de) 2003-05-28

Family

ID=25089166

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69715909T Expired - Fee Related DE69715909T2 (de) 1996-12-19 1997-11-12 Mos-anordnung mit gate-substrat anschluss die auf einem soi-substrat gebildet wird

Country Status (5)

Country Link
US (1) US5753955A (de)
EP (1) EP0946990B1 (de)
JP (1) JP2001506418A (de)
DE (1) DE69715909T2 (de)
WO (1) WO1998027598A1 (de)

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US6365934B1 (en) * 1999-01-29 2002-04-02 International Business Machines Corporation Method and apparatus for elimination of parasitic bipolar action in complementary oxide semiconductor (CMOS) silicon on insulator (SOI) circuits
FR2789519B1 (fr) * 1999-02-05 2003-03-28 Commissariat Energie Atomique Transistor mos a tension de seuil dynamique equipe d'un limiteur de courant, et procede de realisation d'un tel transistor
US6261878B1 (en) * 1999-06-21 2001-07-17 Intel Corporation Integrated circuit with dynamic threshold voltage
JP2001077368A (ja) * 1999-09-03 2001-03-23 Mitsubishi Electric Corp 半導体装置及びその製造方法
US6339005B1 (en) 1999-10-22 2002-01-15 International Business Machines Corporation Disposable spacer for symmetric and asymmetric Schottky contact to SOI MOSFET
JP3608456B2 (ja) * 1999-12-08 2005-01-12 セイコーエプソン株式会社 Ｓｏｉ構造のｍｉｓ電界効果トランジスタの製造方法
JP2002033484A (ja) * 2000-07-18 2002-01-31 Mitsubishi Electric Corp 半導体装置
KR100393221B1 (ko) * 2000-08-11 2003-07-31 삼성전자주식회사 플로팅 바디효과를 제거하기 위한 바디접촉부를 포함하는ｓｏｉ 전계효과트랜지스터 및 제조방법.
US6566848B2 (en) 2000-12-26 2003-05-20 Intel Corporation Auto-calibrating voltage regulator with dynamic set-point capability
JP2002299633A (ja) * 2001-04-03 2002-10-11 Sony Corp 電界効果型トランジスタ
US6784744B2 (en) * 2001-09-27 2004-08-31 Powerq Technologies, Inc. Amplifier circuits and methods
US6859102B2 (en) * 2001-09-27 2005-02-22 Powerq Technologies, Inc. Amplifier circuit and method
US6804502B2 (en) 2001-10-10 2004-10-12 Peregrine Semiconductor Corporation Switch circuit and method of switching radio frequency signals
US7075763B2 (en) * 2002-10-31 2006-07-11 Micron Technology, Inc. Methods, circuits, and applications using a resistor and a Schottky diode
EP3570374B1 (de) 2004-06-23 2022-04-20 pSemi Corporation Integriertes hf-frontend
US7773442B2 (en) 2004-06-25 2010-08-10 Cypress Semiconductor Corporation Memory cell array latchup prevention
US9842629B2 (en) 2004-06-25 2017-12-12 Cypress Semiconductor Corporation Memory cell array latchup prevention
US7375402B2 (en) * 2004-07-07 2008-05-20 Semi Solutions, Llc Method and apparatus for increasing stability of MOS memory cells
US8247840B2 (en) * 2004-07-07 2012-08-21 Semi Solutions, Llc Apparatus and method for improved leakage current of silicon on insulator transistors using a forward biased diode
US7683433B2 (en) * 2004-07-07 2010-03-23 Semi Solution, Llc Apparatus and method for improving drive-strength and leakage of deep submicron MOS transistors
US7224205B2 (en) * 2004-07-07 2007-05-29 Semi Solutions, Llc Apparatus and method for improving drive-strength and leakage of deep submicron MOS transistors
JP2006066691A (ja) * 2004-08-27 2006-03-09 Renesas Technology Corp 半導体装置およびその製造方法
EP1831932B1 (de) * 2004-12-29 2013-05-08 Semi Solutions LLC. Vorrichtung und verfahren zur verbesserung der ansteuerstärke, des leckens und der stabilität von tief-submikrometer-mos-transistoren und speicherzellen
US7651905B2 (en) * 2005-01-12 2010-01-26 Semi Solutions, Llc Apparatus and method for reducing gate leakage in deep sub-micron MOS transistors using semi-rectifying contacts
US7898297B2 (en) * 2005-01-04 2011-03-01 Semi Solution, Llc Method and apparatus for dynamic threshold voltage control of MOS transistors in dynamic logic circuits
US7910993B2 (en) 2005-07-11 2011-03-22 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFET's using an accumulated charge sink
US20080076371A1 (en) 2005-07-11 2008-03-27 Alexander Dribinsky Circuit and method for controlling charge injection in radio frequency switches
USRE48965E1 (en) 2005-07-11 2022-03-08 Psemi Corporation Method and apparatus improving gate oxide reliability by controlling accumulated charge
US7890891B2 (en) 2005-07-11 2011-02-15 Peregrine Semiconductor Corporation Method and apparatus improving gate oxide reliability by controlling accumulated charge
US8742502B2 (en) 2005-07-11 2014-06-03 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction
US9653601B2 (en) 2005-07-11 2017-05-16 Peregrine Semiconductor Corporation Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction
US7863689B2 (en) * 2006-09-19 2011-01-04 Semi Solutions, Llc. Apparatus for using a well current source to effect a dynamic threshold voltage of a MOS transistor
EP2255443B1 (de) * 2008-02-28 2012-11-28 Peregrine Semiconductor Corporation Verfahren und vorrichtung für digitale abstimmung eines kondensators bei einer integrierten schaltung
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US9628075B2 (en) 2012-07-07 2017-04-18 Skyworks Solutions, Inc. Radio-frequency switch having dynamic body coupling
US9059702B2 (en) 2012-07-07 2015-06-16 Skyworks Solutions, Inc. Switch linearization by non-linear compensation of a field-effect transistor
US9160328B2 (en) 2012-07-07 2015-10-13 Skyworks Solutions, Inc. Circuits, devices, methods and applications related to silicon-on-insulator based radio-frequency switches
US20140009212A1 (en) * 2012-07-07 2014-01-09 Skyworks Solutions, Inc. Body-gate coupling to improve linearity of radio-frequency switch
US9276570B2 (en) 2012-07-07 2016-03-01 Skyworks Solutions, Inc. Radio-frequency switch having gate node voltage compensation network
US9148194B2 (en) 2012-07-07 2015-09-29 Skyworks Solutions, Inc. Radio-frequency switch system having improved intermodulation distortion performance
US10147724B2 (en) 2012-07-07 2018-12-04 Skyworks Solutions, Inc. Feed-forward circuit to improve intermodulation distortion performance of radio-frequency switch
US8975950B2 (en) 2012-07-07 2015-03-10 Skyworks Solutions, Inc. Switching device having a discharge circuit for improved intermodulation distortion performance
US9590674B2 (en) 2012-12-14 2017-03-07 Peregrine Semiconductor Corporation Semiconductor devices with switchable ground-body connection
US9013225B2 (en) 2013-02-04 2015-04-21 Skyworks Solutions, Inc. RF switches having increased voltage swing uniformity
US20150236798A1 (en) 2013-03-14 2015-08-20 Peregrine Semiconductor Corporation Methods for Increasing RF Throughput Via Usage of Tunable Filters
US9406695B2 (en) 2013-11-20 2016-08-02 Peregrine Semiconductor Corporation Circuit and method for improving ESD tolerance and switching speed
US9831857B2 (en) 2015-03-11 2017-11-28 Peregrine Semiconductor Corporation Power splitter with programmable output phase shift
US9948281B2 (en) 2016-09-02 2018-04-17 Peregrine Semiconductor Corporation Positive logic digitally tunable capacitor
US20180316343A1 (en) * 2017-04-28 2018-11-01 Qualcomm Incorporated Transistor Switch
US10475816B2 (en) 2017-10-06 2019-11-12 Qualcomm Incorporated Body current bypass resistor
US10505530B2 (en) 2018-03-28 2019-12-10 Psemi Corporation Positive logic switch with selectable DC blocking circuit
US10236872B1 (en) 2018-03-28 2019-03-19 Psemi Corporation AC coupling modules for bias ladders
US10886911B2 (en) 2018-03-28 2021-01-05 Psemi Corporation Stacked FET switch bias ladders
US11476849B2 (en) 2020-01-06 2022-10-18 Psemi Corporation High power positive logic switch

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GB9311129D0 (en) * 1993-05-28 1993-07-14 Philips Electronics Uk Ltd Electronic devices with-film circuit elements forming a sampling circuit
US5559368A (en) * 1994-08-30 1996-09-24 The Regents Of The University Of California Dynamic threshold voltage mosfet having gate to body connection for ultra-low voltage operation

Also Published As

Publication number Publication date
WO1998027598A1 (en) 1998-06-25
JP2001506418A (ja) 2001-05-15
DE69715909D1 (de) 2002-10-31
EP0946990B1 (de) 2002-09-25
EP0946990A1 (de) 1999-10-06
US5753955A (en) 1998-05-19

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Legal Events

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8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee