DE69715289D1 - Elektrode für Plasmaätzen; Vorrichtung und Verfahren mit dieser Elektrode - Google Patents
Elektrode für Plasmaätzen; Vorrichtung und Verfahren mit dieser ElektrodeInfo
- Publication number
- DE69715289D1 DE69715289D1 DE69715289T DE69715289T DE69715289D1 DE 69715289 D1 DE69715289 D1 DE 69715289D1 DE 69715289 T DE69715289 T DE 69715289T DE 69715289 T DE69715289 T DE 69715289T DE 69715289 D1 DE69715289 D1 DE 69715289D1
- Authority
- DE
- Germany
- Prior art keywords
- electrode
- plasma etching
- etching
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32559—Protection means, e.g. coatings
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10S156/914—Differential etching apparatus including particular materials of construction
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12407496A JP3454333B2 (ja) | 1996-04-22 | 1996-04-22 | プラズマエッチング電極 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69715289D1 true DE69715289D1 (de) | 2002-10-17 |
DE69715289T2 DE69715289T2 (de) | 2003-05-08 |
Family
ID=14876298
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69715289T Expired - Fee Related DE69715289T2 (de) | 1996-04-22 | 1997-04-22 | Elektrode für Plasmaätzen; Vorrichtung und Verfahren mit dieser Elektrode |
Country Status (6)
Country | Link |
---|---|
US (1) | US5951814A (de) |
EP (1) | EP0803897B1 (de) |
JP (1) | JP3454333B2 (de) |
KR (1) | KR100417926B1 (de) |
DE (1) | DE69715289T2 (de) |
TW (1) | TW379257B (de) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6399499B1 (en) * | 1999-09-14 | 2002-06-04 | Jeong Gey Lee | Method for fabricating an electrode of a plasma chamber |
TW531820B (en) | 2000-05-12 | 2003-05-11 | Tokyo Electron Ltd | Method of adjusting the thickness of an electrode in a plasma processing system |
JP2002093777A (ja) * | 2000-07-11 | 2002-03-29 | Nisshinbo Ind Inc | ドライエッチング装置 |
JP3876167B2 (ja) * | 2002-02-13 | 2007-01-31 | 川崎マイクロエレクトロニクス株式会社 | 洗浄方法および半導体装置の製造方法 |
US6846726B2 (en) * | 2002-04-17 | 2005-01-25 | Lam Research Corporation | Silicon parts having reduced metallic impurity concentration for plasma reaction chambers |
JP3868341B2 (ja) * | 2002-04-22 | 2007-01-17 | 日清紡績株式会社 | 耐熱性に優れたプラズマエッチング電極及びそれを装着したドライエッチング装置 |
US20040033361A1 (en) * | 2002-08-06 | 2004-02-19 | Kabushiki Kaisha Kobe Seiko Sho(Kobe Steel, Ltd.) | Component of glass-like carbon for CVD apparatus and process for production thereof |
US7172531B2 (en) * | 2003-06-06 | 2007-02-06 | Rodgers Jr Robert E | Variable stride exercise apparatus |
JP4403919B2 (ja) * | 2004-04-01 | 2010-01-27 | 株式会社Sumco | 耐久性に優れたプラズマエッチング用シリコン電極板 |
US7247579B2 (en) | 2004-12-23 | 2007-07-24 | Lam Research Corporation | Cleaning methods for silicon electrode assembly surface contamination removal |
JP4849236B2 (ja) * | 2006-09-27 | 2012-01-11 | 三菱マテリアル株式会社 | パーティクル発生の少ないプラズマエッチング装置用シリコン電極板 |
WO2009078923A2 (en) * | 2007-12-19 | 2009-06-25 | Lam Research Corporation | Film adhesive for semiconductor vacuum processing apparatus |
SG187386A1 (en) * | 2007-12-19 | 2013-02-28 | Lam Res Corp | A composite showerhead electrode assembly for a plasma processing apparatus |
GB2465174A (en) * | 2008-11-06 | 2010-05-12 | Nviro Cleantech Ltd | Roughened electrode for decontamination processes |
GB201102337D0 (en) * | 2011-02-09 | 2011-03-23 | Univ Ulster | A plasma based surface augmentation method |
US9314854B2 (en) | 2013-01-30 | 2016-04-19 | Lam Research Corporation | Ductile mode drilling methods for brittle components of plasma processing apparatuses |
US8893702B2 (en) | 2013-02-20 | 2014-11-25 | Lam Research Corporation | Ductile mode machining methods for hard and brittle components of plasma processing apparatuses |
US20140356985A1 (en) | 2013-06-03 | 2014-12-04 | Lam Research Corporation | Temperature controlled substrate support assembly |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61224423A (ja) * | 1985-03-29 | 1986-10-06 | Toshiba Corp | 反応性イオンエツチング装置 |
JP2553389B2 (ja) * | 1988-12-26 | 1996-11-13 | 東芝セラミックス株式会社 | Cvd装置用カーボン治具 |
JPH07114198B2 (ja) * | 1989-10-02 | 1995-12-06 | 東海カーボン株式会社 | プラズマエッチング用電極板 |
JPH0826464B2 (ja) * | 1989-10-20 | 1996-03-13 | イビデン株式会社 | プラズマエツチング用電極板 |
JPH0463606A (ja) * | 1990-07-03 | 1992-02-28 | Nippon Steel Corp | 表面に非晶質炭素層を持つダイヤモンド工具 |
JP3252330B2 (ja) * | 1991-09-20 | 2002-02-04 | 東芝セラミックス株式会社 | プラズマエッチング用電極板 |
JP2527666B2 (ja) * | 1992-02-18 | 1996-08-28 | イビデン株式会社 | ガラス状炭素被覆物品 |
US5472565A (en) * | 1993-11-17 | 1995-12-05 | Lam Research Corporation | Topology induced plasma enhancement for etched uniformity improvement |
JP3372647B2 (ja) * | 1994-04-18 | 2003-02-04 | キヤノン株式会社 | プラズマ処理装置 |
-
1996
- 1996-04-22 JP JP12407496A patent/JP3454333B2/ja not_active Expired - Fee Related
-
1997
- 1997-04-17 TW TW086104970A patent/TW379257B/zh not_active IP Right Cessation
- 1997-04-18 US US08/837,468 patent/US5951814A/en not_active Expired - Lifetime
- 1997-04-21 KR KR1019970014667A patent/KR100417926B1/ko not_active IP Right Cessation
- 1997-04-22 EP EP97302745A patent/EP0803897B1/de not_active Expired - Lifetime
- 1997-04-22 DE DE69715289T patent/DE69715289T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE69715289T2 (de) | 2003-05-08 |
US5951814A (en) | 1999-09-14 |
EP0803897B1 (de) | 2002-09-11 |
JP3454333B2 (ja) | 2003-10-06 |
KR100417926B1 (ko) | 2004-06-11 |
TW379257B (en) | 2000-01-11 |
EP0803897A3 (de) | 1998-04-01 |
EP0803897A2 (de) | 1997-10-29 |
KR970070241A (ko) | 1997-11-07 |
JPH09289197A (ja) | 1997-11-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69715289D1 (de) | Elektrode für Plasmaätzen; Vorrichtung und Verfahren mit dieser Elektrode | |
DE69423760T2 (de) | Verfahren und vorrichtung zur isolierung von mikrogefässzellen | |
DE69611977D1 (de) | Verfahren und Vorrichtung zur Vermeidung von Fehlerstrom | |
DE69532853D1 (de) | Verfahren und vorrichtung zur mikrowellen-plasmaerzeugung | |
DE69835314D1 (de) | Verfahren und Vorrichtung zur formatgesteuerten Interaktion zwischen Geräten | |
DE69630589D1 (de) | Verfahren und vorrichtung zur plasmaerzeugung | |
DE69522694T2 (de) | Verfahren und vorrichtung zum plasmaspritzen | |
DE69719925T2 (de) | Vorrichtung und Verfahren zur Plasmabrennerserzeugung | |
DE69804808D1 (de) | Verfahren und vorrichtung zur reduzierung von verunreinigungen | |
DE69840900D1 (de) | Komplexes orthogonales Spreizverfahren für Mehrkanäle und zugehörende Vorrichtung | |
DE875757T1 (de) | Vorrichtung und Verfahren zur Plasmavorbereitung | |
DE69626782D1 (de) | Verfahren und gerät zur plasmabearbeitung | |
DE69528743D1 (de) | Verfahren und Vorrichtung zur Plasmabehandlung | |
DE59712656D1 (de) | Vorrichtung und verfahren zur kathodenzerstäubung | |
KR970004986A (ko) | 돌출전극 부속 전자부품의 제조장치 및 제조방법 | |
DE69425332T2 (de) | Verfahren und Vorrichtung zur Plasmamassenspektrometrie | |
DE59009845D1 (de) | Verfahren und Vorrichtung zum Mikrowellen-Plasmaätzen. | |
DE69840936D1 (de) | Verfahren und vorrichtung zur zeitmultiplex-ansteuerung mit spannungssignalen | |
DE69817114D1 (de) | Verfahren und Vorrichtung zur Reduzierung des Vorspannungsstromes in einem Referenzspannungkonstanter | |
DE69413214D1 (de) | Plasmalichtbogenverfahren- und vorrichtung | |
DE19881726T1 (de) | Verfahren und Vorrichtung zum Sprühen von Plasma | |
DE69404843D1 (de) | Verfahren und vorrichtung zum nachweis und zur identifizierung von elektrischen kabeln | |
DE59705537D1 (de) | Verfahren und Vorrichtung zum funkenerosiven Bearbeiten | |
DE69707425D1 (de) | Verfahren und vorrichtung mit gerätebeschreibung für konventionelles gerät | |
ATE434187T1 (de) | Verfahren und vorrichtung zur prüfung von elektrischen geräten mit schutzleiter |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |