DE69704536D1 - Spin-Ventil GMR Sensor mit Austauschstabilisierung - Google Patents
Spin-Ventil GMR Sensor mit AustauschstabilisierungInfo
- Publication number
- DE69704536D1 DE69704536D1 DE69704536T DE69704536T DE69704536D1 DE 69704536 D1 DE69704536 D1 DE 69704536D1 DE 69704536 T DE69704536 T DE 69704536T DE 69704536 T DE69704536 T DE 69704536T DE 69704536 D1 DE69704536 D1 DE 69704536D1
- Authority
- DE
- Germany
- Prior art keywords
- spin valve
- gmr sensor
- valve gmr
- stabilization
- exchange
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
- G11B5/3929—Disposition of magnetic thin films not used for directly coupling magnetic flux from the track to the MR film or for shielding
- G11B5/3932—Magnetic biasing films
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Magnetic Heads (AREA)
- Hall/Mr Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/748,063 US5739990A (en) | 1996-11-13 | 1996-11-13 | Spin-valve GMR sensor with inbound exchange stabilization |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69704536D1 true DE69704536D1 (de) | 2001-05-17 |
DE69704536T2 DE69704536T2 (de) | 2001-08-09 |
Family
ID=25007832
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69704536T Expired - Fee Related DE69704536T2 (de) | 1996-11-13 | 1997-10-30 | Spin-Ventil GMR Sensor mit Austauschstabilisierung |
Country Status (4)
Country | Link |
---|---|
US (1) | US5739990A (de) |
EP (1) | EP0843303B1 (de) |
JP (1) | JPH10149517A (de) |
DE (1) | DE69704536T2 (de) |
Families Citing this family (51)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6690553B2 (en) | 1996-08-26 | 2004-02-10 | Kabushiki Kaisha Toshiba | Magnetoresistance effect device, magnetic head therewith, magnetic recording/reproducing head, and magnetic storing apparatus |
US6064551A (en) * | 1997-02-27 | 2000-05-16 | Sony Corporation | Magnetoresistance effect type magnetic head |
US6040962A (en) * | 1997-05-14 | 2000-03-21 | Tdk Corporation | Magnetoresistive element with conductive films and magnetic domain films overlapping a central active area |
JP3263004B2 (ja) * | 1997-06-06 | 2002-03-04 | アルプス電気株式会社 | スピンバルブ型薄膜素子 |
US6134090A (en) * | 1998-03-20 | 2000-10-17 | Seagate Technology Llc | Enhanced spin-valve/GMR magnetic sensor with an insulating boundary layer |
US6103136A (en) * | 1998-03-23 | 2000-08-15 | Headway Technologies, Inc. | Method for forming a soft adjacent layer (SAL) magnetoresistive (MR) sensor element with transversely magnetically biased soft adjacent layer (SAL) |
US6738236B1 (en) | 1998-05-07 | 2004-05-18 | Seagate Technology Llc | Spin valve/GMR sensor using synthetic antiferromagnetic layer pinned by Mn-alloy having a high blocking temperature |
US6191926B1 (en) | 1998-05-07 | 2001-02-20 | Seagate Technology Llc | Spin valve magnetoresistive sensor using permanent magnet biased artificial antiferromagnet layer |
US6356420B1 (en) | 1998-05-07 | 2002-03-12 | Seagate Technology Llc | Storage system having read head utilizing GMR and AMr effects |
US6169647B1 (en) | 1998-06-11 | 2001-01-02 | Seagate Technology Llc | Giant magnetoresistive sensor having weakly pinned ferromagnetic layer |
US6633464B2 (en) * | 1998-12-09 | 2003-10-14 | Read-Rite Corporation | Synthetic antiferromagnetic pinned layer with Fe/FeSi/Fe system |
US6462920B1 (en) | 1998-12-23 | 2002-10-08 | Read-Rite Corporation | Method and system for reducing MR head instability |
US6228276B1 (en) * | 1999-02-05 | 2001-05-08 | Headway Technologies, Inc. | Method of manufacturing magnetoresistive (MR) sensor element with sunken lead structure |
US6469878B1 (en) * | 1999-02-11 | 2002-10-22 | Seagate Technology Llc | Data head and method using a single antiferromagnetic material to pin multiple magnetic layers with differing orientation |
US6583971B1 (en) * | 1999-03-09 | 2003-06-24 | Sae Magnetics (Hk) Ltd. | Elimination of electric-pop noise in MR/GMR device |
JP2000331318A (ja) * | 1999-05-18 | 2000-11-30 | Fujitsu Ltd | 磁気抵抗効果ヘッド |
US6383574B1 (en) | 1999-07-23 | 2002-05-07 | Headway Technologies, Inc. | Ion implantation method for fabricating magnetoresistive (MR) sensor element |
US6453542B1 (en) * | 2000-02-28 | 2002-09-24 | Headway Technologies, Inc. | Method for fabricating balanced shield connections for noise reduction in MR/GMR read heads |
JP2001256608A (ja) * | 2000-03-14 | 2001-09-21 | Toshiba Corp | 磁気ヘッド及び磁気記憶再生装置 |
US6496334B1 (en) | 2000-05-26 | 2002-12-17 | Read-Rite Corportion | Data storage and retrieval apparatus with thin film read head having planarized extra gap and shield layers and method of fabrication thereof |
JP4074192B2 (ja) * | 2000-09-19 | 2008-04-09 | シーゲイト テクノロジー エルエルシー | 自己無撞着減磁場を有する巨大磁気抵抗センサ |
US6801408B1 (en) | 2000-11-02 | 2004-10-05 | Western Digital (Fremont), Inc. | Data storage and retrieval apparatus with thin film read head having a planar sensor element and an extra gap and method of fabrication thereof |
JP2002170211A (ja) * | 2000-11-28 | 2002-06-14 | Hitachi Ltd | スピンバルブ型巨大磁気抵抗効果ヘッド及びその製造方法 |
US6798622B2 (en) | 2000-12-11 | 2004-09-28 | Headway Technologies, Inc. | Magnetoresistive (MR) sensor element with sunken lead structure |
US6577477B1 (en) | 2001-02-01 | 2003-06-10 | Headway Technologies, Inc. | Hard magnetic bias configuration for GMR |
US6661625B1 (en) | 2001-02-20 | 2003-12-09 | Kyusik Sin | Spin-dependent tunneling sensor with low resistance metal oxide tunnel barrier |
US7016165B2 (en) * | 2001-04-02 | 2006-03-21 | Headway Technologies, Inc. | Abutted junction GMR read head with an improved hard bias layer and a method for its fabrication |
US6700752B2 (en) | 2001-04-18 | 2004-03-02 | Seagate Technology Llc | Non-magnetic metallic layer in a reader gap of a disc drive |
JP3593320B2 (ja) * | 2001-04-20 | 2004-11-24 | アルプス電気株式会社 | 磁気検出素子及びその製造方法 |
US20030002231A1 (en) * | 2001-06-29 | 2003-01-02 | Dee Richard Henry | Reduced sensitivity spin valve head for magnetic tape applications |
US20030002232A1 (en) * | 2001-06-29 | 2003-01-02 | Storage Technology Corporation | Apparatus and method of making a reduced sensitivity spin valve sensor apparatus in which a flux carrying capacity is increased |
US20030002225A1 (en) * | 2001-06-29 | 2003-01-02 | Storage Technology Corporation | Apparatus and method of making a reduced sensitivity spin valve sensor apparatus in which a flux injection efficiency is reduced |
US20030002230A1 (en) * | 2001-06-29 | 2003-01-02 | Storage Technology Corporation | Apparatus and method of making a reduced sensitivity spin valve sensor apparatus in which a basic magnetic sensitivity is reduced |
JP3958947B2 (ja) * | 2001-09-14 | 2007-08-15 | アルプス電気株式会社 | 磁気検出素子及びその製造方法 |
JP3828777B2 (ja) * | 2001-10-22 | 2006-10-04 | 株式会社日立グローバルストレージテクノロジーズ | 磁気抵抗効果ヘッド |
JP2003303406A (ja) * | 2002-04-08 | 2003-10-24 | Hitachi Ltd | 磁気抵抗効果ヘッド及び磁気ヘッド |
WO2003054523A2 (en) * | 2001-12-21 | 2003-07-03 | Koninklijke Philips Electronics N.V. | Sensor and method for measuring the areal density of magnetic nanoparticles on a micro-array |
KR100446295B1 (ko) * | 2002-02-14 | 2004-09-01 | 삼성전자주식회사 | 저온에서 위크 라이트를 방지하는 거대자기저항 헤드 |
US6744607B2 (en) | 2002-03-21 | 2004-06-01 | Hitachi Global Storage Technologies Netherlands B.V. | Exchange biased self-pinned spin valve sensor with recessed overlaid leads |
US20030228488A1 (en) * | 2002-06-05 | 2003-12-11 | Seagate Technology Llc | Magnetic read head using (FePt)100-xCux as a permanent magnet material |
US7133264B2 (en) * | 2002-09-13 | 2006-11-07 | Hitachi Global Storage Technologies Netherlands B.V. | High resistance sense current perpendicular-to-plane (CPP) giant magnetoresistive (GMR) head |
US7177122B2 (en) * | 2003-10-27 | 2007-02-13 | Seagate Technology Llc | Biasing for tri-layer magnetoresistive sensors |
JP2005251254A (ja) * | 2004-03-02 | 2005-09-15 | Tdk Corp | 薄膜磁気ヘッド、薄膜磁気ヘッドのウエハ、ヘッドジンバルアセンブリ、ハードディスク装置、および薄膜磁気ヘッドの製造方法 |
US7891081B2 (en) * | 2004-04-01 | 2011-02-22 | Headway Technologies, Inc. | Process of manufacturing a side pinned magnetic recording sensor |
US7209329B2 (en) * | 2004-06-28 | 2007-04-24 | Hitachi Global Storage Technologies Netherlands B.V. | Heat sink and high thermal stability structure for CPP sensor |
DE102004032484B3 (de) * | 2004-07-05 | 2005-11-24 | Infineon Technologies Ag | Sensor und Verfahren zum Herstellen eines Sensors |
US7354505B2 (en) * | 2004-08-25 | 2008-04-08 | Board Of Trustees Of Michigan State University | Epitaxial ferromagnetic Ni3FeN |
JP5529648B2 (ja) * | 2009-08-04 | 2014-06-25 | キヤノンアネルバ株式会社 | 磁気センサ積層体、その成膜方法、成膜制御プログラムおよび記録媒体 |
US20110050211A1 (en) * | 2009-08-26 | 2011-03-03 | Seagate Technology Llc | Trapezoidal reader for ultra high density magnetic recording |
US8582251B2 (en) * | 2009-08-26 | 2013-11-12 | Seagate Technology Llc | Magnetic sensor with non-rectangular geometry |
US10614840B1 (en) | 2017-07-11 | 2020-04-07 | Seagate Technology Llc | Reader with shape optimized for higher SNR |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4639806A (en) * | 1983-09-09 | 1987-01-27 | Sharp Kabushiki Kaisha | Thin film magnetic head having a magnetized ferromagnetic film on the MR element |
US4771349A (en) * | 1986-10-31 | 1988-09-13 | International Business Machine Corporation | Magnetoresistive read transducer |
US5018037A (en) * | 1989-10-10 | 1991-05-21 | Krounbi Mohamad T | Magnetoresistive read transducer having hard magnetic bias |
US5285339A (en) * | 1992-02-28 | 1994-02-08 | International Business Machines Corporation | Magnetoresistive read transducer having improved bias profile |
JPH06349031A (ja) * | 1993-04-14 | 1994-12-22 | Sanyo Electric Co Ltd | 磁気抵抗効果型ヘッド |
US5438470A (en) * | 1994-05-13 | 1995-08-01 | Read-Rite Corporation | Magnetoresistive structure with contiguous junction hard bias design with low lead resistance |
US5583725A (en) * | 1994-06-15 | 1996-12-10 | International Business Machines Corporation | Spin valve magnetoresistive sensor with self-pinned laminated layer and magnetic recording system using the sensor |
US5483402A (en) * | 1994-06-15 | 1996-01-09 | Quantum Corporation | Magneto resistive head having symmetric off-track performance profile |
US5528440A (en) * | 1994-07-26 | 1996-06-18 | International Business Machines Corporation | Spin valve magnetoresistive element with longitudinal exchange biasing of end regions abutting the free layer, and magnetic recording system using the element |
US5508866A (en) * | 1994-08-15 | 1996-04-16 | International Business Machines Corporation | Magnetoresistive sensor having exchange-coupled stabilization for transverse bias layer |
US5493467A (en) * | 1994-12-27 | 1996-02-20 | International Business Machines Corporation | Yoke spin valve MR read head |
US5568335A (en) * | 1994-12-29 | 1996-10-22 | International Business Machines Corporation | Multi-layer gap structure for high resolution magnetoresistive read head |
US5495378A (en) * | 1995-01-30 | 1996-02-27 | Seagate Technology, Inc. | Magnetoresistive sensor with improved performance and processability |
US5608593A (en) * | 1995-03-09 | 1997-03-04 | Quantum Peripherals Colorado, Inc. | Shaped spin valve type magnetoresistive transducer and method for fabricating the same incorporating domain stabilization technique |
-
1996
- 1996-11-13 US US08/748,063 patent/US5739990A/en not_active Expired - Lifetime
-
1997
- 1997-10-30 DE DE69704536T patent/DE69704536T2/de not_active Expired - Fee Related
- 1997-10-30 EP EP97118958A patent/EP0843303B1/de not_active Expired - Lifetime
- 1997-11-13 JP JP9330987A patent/JPH10149517A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
EP0843303B1 (de) | 2001-04-11 |
EP0843303A2 (de) | 1998-05-20 |
EP0843303A3 (de) | 1998-06-24 |
US5739990A (en) | 1998-04-14 |
DE69704536T2 (de) | 2001-08-09 |
JPH10149517A (ja) | 1998-06-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |