DE69704536D1 - Spin-Ventil GMR Sensor mit Austauschstabilisierung - Google Patents

Spin-Ventil GMR Sensor mit Austauschstabilisierung

Info

Publication number
DE69704536D1
DE69704536D1 DE69704536T DE69704536T DE69704536D1 DE 69704536 D1 DE69704536 D1 DE 69704536D1 DE 69704536 T DE69704536 T DE 69704536T DE 69704536 T DE69704536 T DE 69704536T DE 69704536 D1 DE69704536 D1 DE 69704536D1
Authority
DE
Germany
Prior art keywords
spin valve
gmr sensor
valve gmr
stabilization
exchange
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69704536T
Other languages
English (en)
Other versions
DE69704536T2 (de
Inventor
Durga P Ravipati
Samuel W Yuan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Read Rite Corp
Original Assignee
Read Rite Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Read Rite Corp filed Critical Read Rite Corp
Application granted granted Critical
Publication of DE69704536D1 publication Critical patent/DE69704536D1/de
Publication of DE69704536T2 publication Critical patent/DE69704536T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G11B5/3929—Disposition of magnetic thin films not used for directly coupling magnetic flux from the track to the MR film or for shielding
    • G11B5/3932—Magnetic biasing films
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Magnetic Heads (AREA)
  • Hall/Mr Elements (AREA)
DE69704536T 1996-11-13 1997-10-30 Spin-Ventil GMR Sensor mit Austauschstabilisierung Expired - Fee Related DE69704536T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/748,063 US5739990A (en) 1996-11-13 1996-11-13 Spin-valve GMR sensor with inbound exchange stabilization

Publications (2)

Publication Number Publication Date
DE69704536D1 true DE69704536D1 (de) 2001-05-17
DE69704536T2 DE69704536T2 (de) 2001-08-09

Family

ID=25007832

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69704536T Expired - Fee Related DE69704536T2 (de) 1996-11-13 1997-10-30 Spin-Ventil GMR Sensor mit Austauschstabilisierung

Country Status (4)

Country Link
US (1) US5739990A (de)
EP (1) EP0843303B1 (de)
JP (1) JPH10149517A (de)
DE (1) DE69704536T2 (de)

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US6064551A (en) * 1997-02-27 2000-05-16 Sony Corporation Magnetoresistance effect type magnetic head
US6040962A (en) * 1997-05-14 2000-03-21 Tdk Corporation Magnetoresistive element with conductive films and magnetic domain films overlapping a central active area
JP3263004B2 (ja) * 1997-06-06 2002-03-04 アルプス電気株式会社 スピンバルブ型薄膜素子
US6134090A (en) * 1998-03-20 2000-10-17 Seagate Technology Llc Enhanced spin-valve/GMR magnetic sensor with an insulating boundary layer
US6103136A (en) * 1998-03-23 2000-08-15 Headway Technologies, Inc. Method for forming a soft adjacent layer (SAL) magnetoresistive (MR) sensor element with transversely magnetically biased soft adjacent layer (SAL)
US6738236B1 (en) 1998-05-07 2004-05-18 Seagate Technology Llc Spin valve/GMR sensor using synthetic antiferromagnetic layer pinned by Mn-alloy having a high blocking temperature
US6191926B1 (en) 1998-05-07 2001-02-20 Seagate Technology Llc Spin valve magnetoresistive sensor using permanent magnet biased artificial antiferromagnet layer
US6356420B1 (en) 1998-05-07 2002-03-12 Seagate Technology Llc Storage system having read head utilizing GMR and AMr effects
US6169647B1 (en) 1998-06-11 2001-01-02 Seagate Technology Llc Giant magnetoresistive sensor having weakly pinned ferromagnetic layer
US6633464B2 (en) * 1998-12-09 2003-10-14 Read-Rite Corporation Synthetic antiferromagnetic pinned layer with Fe/FeSi/Fe system
US6462920B1 (en) 1998-12-23 2002-10-08 Read-Rite Corporation Method and system for reducing MR head instability
US6228276B1 (en) * 1999-02-05 2001-05-08 Headway Technologies, Inc. Method of manufacturing magnetoresistive (MR) sensor element with sunken lead structure
US6469878B1 (en) * 1999-02-11 2002-10-22 Seagate Technology Llc Data head and method using a single antiferromagnetic material to pin multiple magnetic layers with differing orientation
US6583971B1 (en) * 1999-03-09 2003-06-24 Sae Magnetics (Hk) Ltd. Elimination of electric-pop noise in MR/GMR device
JP2000331318A (ja) * 1999-05-18 2000-11-30 Fujitsu Ltd 磁気抵抗効果ヘッド
US6383574B1 (en) 1999-07-23 2002-05-07 Headway Technologies, Inc. Ion implantation method for fabricating magnetoresistive (MR) sensor element
US6453542B1 (en) * 2000-02-28 2002-09-24 Headway Technologies, Inc. Method for fabricating balanced shield connections for noise reduction in MR/GMR read heads
JP2001256608A (ja) * 2000-03-14 2001-09-21 Toshiba Corp 磁気ヘッド及び磁気記憶再生装置
US6496334B1 (en) 2000-05-26 2002-12-17 Read-Rite Corportion Data storage and retrieval apparatus with thin film read head having planarized extra gap and shield layers and method of fabrication thereof
JP4074192B2 (ja) * 2000-09-19 2008-04-09 シーゲイト テクノロジー エルエルシー 自己無撞着減磁場を有する巨大磁気抵抗センサ
US6801408B1 (en) 2000-11-02 2004-10-05 Western Digital (Fremont), Inc. Data storage and retrieval apparatus with thin film read head having a planar sensor element and an extra gap and method of fabrication thereof
JP2002170211A (ja) * 2000-11-28 2002-06-14 Hitachi Ltd スピンバルブ型巨大磁気抵抗効果ヘッド及びその製造方法
US6798622B2 (en) 2000-12-11 2004-09-28 Headway Technologies, Inc. Magnetoresistive (MR) sensor element with sunken lead structure
US6577477B1 (en) 2001-02-01 2003-06-10 Headway Technologies, Inc. Hard magnetic bias configuration for GMR
US6661625B1 (en) 2001-02-20 2003-12-09 Kyusik Sin Spin-dependent tunneling sensor with low resistance metal oxide tunnel barrier
US7016165B2 (en) * 2001-04-02 2006-03-21 Headway Technologies, Inc. Abutted junction GMR read head with an improved hard bias layer and a method for its fabrication
US6700752B2 (en) 2001-04-18 2004-03-02 Seagate Technology Llc Non-magnetic metallic layer in a reader gap of a disc drive
JP3593320B2 (ja) * 2001-04-20 2004-11-24 アルプス電気株式会社 磁気検出素子及びその製造方法
US20030002231A1 (en) * 2001-06-29 2003-01-02 Dee Richard Henry Reduced sensitivity spin valve head for magnetic tape applications
US20030002232A1 (en) * 2001-06-29 2003-01-02 Storage Technology Corporation Apparatus and method of making a reduced sensitivity spin valve sensor apparatus in which a flux carrying capacity is increased
US20030002225A1 (en) * 2001-06-29 2003-01-02 Storage Technology Corporation Apparatus and method of making a reduced sensitivity spin valve sensor apparatus in which a flux injection efficiency is reduced
US20030002230A1 (en) * 2001-06-29 2003-01-02 Storage Technology Corporation Apparatus and method of making a reduced sensitivity spin valve sensor apparatus in which a basic magnetic sensitivity is reduced
JP3958947B2 (ja) * 2001-09-14 2007-08-15 アルプス電気株式会社 磁気検出素子及びその製造方法
JP3828777B2 (ja) * 2001-10-22 2006-10-04 株式会社日立グローバルストレージテクノロジーズ 磁気抵抗効果ヘッド
JP2003303406A (ja) * 2002-04-08 2003-10-24 Hitachi Ltd 磁気抵抗効果ヘッド及び磁気ヘッド
WO2003054523A2 (en) * 2001-12-21 2003-07-03 Koninklijke Philips Electronics N.V. Sensor and method for measuring the areal density of magnetic nanoparticles on a micro-array
KR100446295B1 (ko) * 2002-02-14 2004-09-01 삼성전자주식회사 저온에서 위크 라이트를 방지하는 거대자기저항 헤드
US6744607B2 (en) 2002-03-21 2004-06-01 Hitachi Global Storage Technologies Netherlands B.V. Exchange biased self-pinned spin valve sensor with recessed overlaid leads
US20030228488A1 (en) * 2002-06-05 2003-12-11 Seagate Technology Llc Magnetic read head using (FePt)100-xCux as a permanent magnet material
US7133264B2 (en) * 2002-09-13 2006-11-07 Hitachi Global Storage Technologies Netherlands B.V. High resistance sense current perpendicular-to-plane (CPP) giant magnetoresistive (GMR) head
US7177122B2 (en) * 2003-10-27 2007-02-13 Seagate Technology Llc Biasing for tri-layer magnetoresistive sensors
JP2005251254A (ja) * 2004-03-02 2005-09-15 Tdk Corp 薄膜磁気ヘッド、薄膜磁気ヘッドのウエハ、ヘッドジンバルアセンブリ、ハードディスク装置、および薄膜磁気ヘッドの製造方法
US7891081B2 (en) * 2004-04-01 2011-02-22 Headway Technologies, Inc. Process of manufacturing a side pinned magnetic recording sensor
US7209329B2 (en) * 2004-06-28 2007-04-24 Hitachi Global Storage Technologies Netherlands B.V. Heat sink and high thermal stability structure for CPP sensor
DE102004032484B3 (de) * 2004-07-05 2005-11-24 Infineon Technologies Ag Sensor und Verfahren zum Herstellen eines Sensors
US7354505B2 (en) * 2004-08-25 2008-04-08 Board Of Trustees Of Michigan State University Epitaxial ferromagnetic Ni3FeN
JP5529648B2 (ja) * 2009-08-04 2014-06-25 キヤノンアネルバ株式会社 磁気センサ積層体、その成膜方法、成膜制御プログラムおよび記録媒体
US20110050211A1 (en) * 2009-08-26 2011-03-03 Seagate Technology Llc Trapezoidal reader for ultra high density magnetic recording
US8582251B2 (en) * 2009-08-26 2013-11-12 Seagate Technology Llc Magnetic sensor with non-rectangular geometry
US10614840B1 (en) 2017-07-11 2020-04-07 Seagate Technology Llc Reader with shape optimized for higher SNR

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US4771349A (en) * 1986-10-31 1988-09-13 International Business Machine Corporation Magnetoresistive read transducer
US5018037A (en) * 1989-10-10 1991-05-21 Krounbi Mohamad T Magnetoresistive read transducer having hard magnetic bias
US5285339A (en) * 1992-02-28 1994-02-08 International Business Machines Corporation Magnetoresistive read transducer having improved bias profile
JPH06349031A (ja) * 1993-04-14 1994-12-22 Sanyo Electric Co Ltd 磁気抵抗効果型ヘッド
US5438470A (en) * 1994-05-13 1995-08-01 Read-Rite Corporation Magnetoresistive structure with contiguous junction hard bias design with low lead resistance
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US5483402A (en) * 1994-06-15 1996-01-09 Quantum Corporation Magneto resistive head having symmetric off-track performance profile
US5528440A (en) * 1994-07-26 1996-06-18 International Business Machines Corporation Spin valve magnetoresistive element with longitudinal exchange biasing of end regions abutting the free layer, and magnetic recording system using the element
US5508866A (en) * 1994-08-15 1996-04-16 International Business Machines Corporation Magnetoresistive sensor having exchange-coupled stabilization for transverse bias layer
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US5568335A (en) * 1994-12-29 1996-10-22 International Business Machines Corporation Multi-layer gap structure for high resolution magnetoresistive read head
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Also Published As

Publication number Publication date
EP0843303B1 (de) 2001-04-11
EP0843303A2 (de) 1998-05-20
EP0843303A3 (de) 1998-06-24
US5739990A (en) 1998-04-14
DE69704536T2 (de) 2001-08-09
JPH10149517A (ja) 1998-06-02

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee