DE69511145D1 - Magnetoresistiver Wiedergabekopf mit doppeltem Spin-Ventilelement - Google Patents

Magnetoresistiver Wiedergabekopf mit doppeltem Spin-Ventilelement

Info

Publication number
DE69511145D1
DE69511145D1 DE69511145T DE69511145T DE69511145D1 DE 69511145 D1 DE69511145 D1 DE 69511145D1 DE 69511145 T DE69511145 T DE 69511145T DE 69511145 T DE69511145 T DE 69511145T DE 69511145 D1 DE69511145 D1 DE 69511145D1
Authority
DE
Germany
Prior art keywords
valve element
spin valve
playback head
double spin
magnetoresistive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69511145T
Other languages
English (en)
Other versions
DE69511145T2 (de
Inventor
Neil Smith
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eastman Kodak Co
Original Assignee
Eastman Kodak Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eastman Kodak Co filed Critical Eastman Kodak Co
Application granted granted Critical
Publication of DE69511145D1 publication Critical patent/DE69511145D1/de
Publication of DE69511145T2 publication Critical patent/DE69511145T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G11B5/3945—Heads comprising more than one sensitive element
    • G11B5/3948—Heads comprising more than one sensitive element the sensitive elements being active read-out elements
    • G11B5/3951—Heads comprising more than one sensitive element the sensitive elements being active read-out elements the active elements being arranged on several parallel planes
    • G11B5/3954—Heads comprising more than one sensitive element the sensitive elements being active read-out elements the active elements being arranged on several parallel planes the active elements transducing on a single track

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Magnetic Heads (AREA)
DE69511145T 1994-03-09 1995-03-04 Magnetoresistiver Wiedergabekopf mit doppeltem Spin-Ventilelement Expired - Fee Related DE69511145T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US20875594A 1994-03-09 1994-03-09

Publications (2)

Publication Number Publication Date
DE69511145D1 true DE69511145D1 (de) 1999-09-09
DE69511145T2 DE69511145T2 (de) 2000-02-03

Family

ID=22775921

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69511145T Expired - Fee Related DE69511145T2 (de) 1994-03-09 1995-03-04 Magnetoresistiver Wiedergabekopf mit doppeltem Spin-Ventilelement

Country Status (4)

Country Link
US (1) US5627703A (de)
EP (1) EP0676746B1 (de)
JP (1) JPH07320229A (de)
DE (1) DE69511145T2 (de)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09274710A (ja) * 1996-04-04 1997-10-21 Fujitsu Ltd スピンバルブ磁気抵抗効果ヘッドとその製造方法及び磁気記録装置
TW367493B (en) * 1996-04-30 1999-08-21 Toshiba Corp Reluctance component
US5869963A (en) * 1996-09-12 1999-02-09 Alps Electric Co., Ltd. Magnetoresistive sensor and head
US5768069A (en) * 1996-11-27 1998-06-16 International Business Machines Corporation Self-biased dual spin valve sensor
US6469873B1 (en) * 1997-04-25 2002-10-22 Hitachi, Ltd. Magnetic head and magnetic storage apparatus using the same
US6118622A (en) 1997-05-13 2000-09-12 International Business Machines Corporation Technique for robust resetting of spin valve head
US5748399A (en) * 1997-05-13 1998-05-05 International Business Machines Corporation Resettable symmetric spin valve
US5825595A (en) * 1997-05-13 1998-10-20 International Business Machines Corporation Spin valve sensor with two spun values separated by an insulated current conductor
US5856617A (en) * 1997-09-02 1999-01-05 International Business Machines Corporation Atomic force microscope system with cantilever having unbiased spin valve magnetoresistive strain gauge
JPH1196513A (ja) * 1997-09-17 1999-04-09 Fujitsu Ltd 磁気ヘッド及びこれを有する磁気記憶装置
US5966012A (en) * 1997-10-07 1999-10-12 International Business Machines Corporation Magnetic tunnel junction device with improved fixed and free ferromagnetic layers
US6245450B1 (en) 1997-11-17 2001-06-12 Matsushita Electric Industrial Co., Ltd. Exchange coupling film magnetoresistance effect device magnetoresistance effective head and method for producing magnetoresistance effect device
US5920446A (en) * 1998-01-06 1999-07-06 International Business Machines Corporation Ultra high density GMR sensor
US6185079B1 (en) 1998-11-09 2001-02-06 International Business Machines Corporation Disk drive with thermal asperity reduction circuitry using a magnetic tunnel junction sensor
KR100467463B1 (ko) * 1999-05-28 2005-01-24 마쯔시다덴기산교 가부시키가이샤 자기 저항 소자 및 그 제조방법 및 자기 부품
US6519117B1 (en) * 1999-12-06 2003-02-11 International Business Machines Corporation Dual AP pinned GMR head with offset layer
US6643103B1 (en) 2000-01-05 2003-11-04 Seagate Technology Llc Very high linear resolution CPP differential dual spin valve magnetoresistive head
US6731473B2 (en) * 2000-04-12 2004-05-04 Seagate Technology Llc Dual pseudo spin valve heads
US6549382B1 (en) 2000-06-14 2003-04-15 International Business Machines Corporation Read head with asymmetric dual AP pinned spin valve sensor
US6570745B1 (en) 2000-11-20 2003-05-27 International Business Machines Corporation Lead overlaid type of sensor with sensor passive regions pinned
US6633461B2 (en) * 2001-03-20 2003-10-14 Hitachi Global Storage Technologies Netherlands B.V. Dual tunnel junction sensor antiferromagnetic layer between pinned layers
US6650509B2 (en) 2001-03-20 2003-11-18 Hitachi Global Storage Technologies Netherlands B.V. Dual spin valve sensor with AP pinned layers
US6707084B2 (en) * 2002-02-06 2004-03-16 Micron Technology, Inc. Antiferromagnetically stabilized pseudo spin valve for memory applications
US6801412B2 (en) 2002-04-19 2004-10-05 International Business Machines Corporation Method and apparatus for improved pinning strength for self-pinned giant magnetoresistive heads
US6894878B1 (en) 2002-07-10 2005-05-17 Maxtor Corporation Differential GMR head using anti-parallel pinned layers
US6781798B2 (en) 2002-07-15 2004-08-24 International Business Machines Corporation CPP sensor with dual self-pinned AP pinned layer structures
US7019371B2 (en) 2004-01-26 2006-03-28 Seagate Technology Llc Current-in-plane magnetic sensor including a trilayer structure
US20070279971A1 (en) * 2004-06-04 2007-12-06 Micron Technology, Inc. Modified pseudo-spin valve (psv) for memory applications
US7573684B2 (en) 2005-04-13 2009-08-11 Seagate Technology Llc Current-in-plane differential magnetic tri-layer sensor
US7835116B2 (en) * 2005-09-09 2010-11-16 Seagate Technology Llc Magnetoresistive stack with enhanced pinned layer
US7643255B2 (en) * 2006-03-17 2010-01-05 Hitachi Global Storage Technologies Netherlands B.V. Anti-parallel magnetization layers in the free layers and magnetization layers of a differential sensor read head

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4103315A (en) * 1977-06-24 1978-07-25 International Business Machines Corporation Antiferromagnetic-ferromagnetic exchange bias films
JPH07105006B2 (ja) * 1985-11-05 1995-11-13 ソニー株式会社 磁気抵抗効果型磁気ヘツド
FR2648942B1 (fr) * 1989-06-27 1995-08-11 Thomson Csf Capteur a effet magnetoresistif
US5084794A (en) * 1990-03-29 1992-01-28 Eastman Kodak Company Shorted dual element magnetoresistive reproduce head exhibiting high density signal amplification
JP3088478B2 (ja) * 1990-05-21 2000-09-18 財団法人生産開発科学研究所 磁気抵抗効果素子
US5206590A (en) * 1990-12-11 1993-04-27 International Business Machines Corporation Magnetoresistive sensor based on the spin valve effect
US5159513A (en) * 1991-02-08 1992-10-27 International Business Machines Corporation Magnetoresistive sensor based on the spin valve effect
MY108176A (en) * 1991-02-08 1996-08-30 Hitachi Global Storage Tech Netherlands B V Magnetoresistive sensor based on oscillations in the magnetoresistance
US5341261A (en) * 1991-08-26 1994-08-23 International Business Machines Corporation Magnetoresistive sensor having multilayer thin film structure
US5304975A (en) * 1991-10-23 1994-04-19 Kabushiki Kaisha Toshiba Magnetoresistance effect element and magnetoresistance effect sensor
FR2685489B1 (fr) * 1991-12-23 1994-08-05 Thomson Csf Capteur de champ magnetique faible a effet magnetoresistif.
US5287238A (en) * 1992-11-06 1994-02-15 International Business Machines Corporation Dual spin valve magnetoresistive sensor
US5301079A (en) * 1992-11-17 1994-04-05 International Business Machines Corporation Current biased magnetoresistive spin valve sensor
US5452163A (en) * 1993-12-23 1995-09-19 International Business Machines Corporation Multilayer magnetoresistive sensor

Also Published As

Publication number Publication date
JPH07320229A (ja) 1995-12-08
DE69511145T2 (de) 2000-02-03
EP0676746A1 (de) 1995-10-11
EP0676746B1 (de) 1999-08-04
US5627703A (en) 1997-05-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: BLICKLE, K., DIPL.-ING., PAT.-ASS., 70327 STUTTGAR

8328 Change in the person/name/address of the agent

Representative=s name: DR. KUEHNER, H., RECHTSANW., 70327 STUTTGART

8339 Ceased/non-payment of the annual fee