DE69633616D1 - Selektive ätzung von halbleitendem substrat in beziehung auf epitaktische schichten - Google Patents
Selektive ätzung von halbleitendem substrat in beziehung auf epitaktische schichtenInfo
- Publication number
- DE69633616D1 DE69633616D1 DE1996633616 DE69633616T DE69633616D1 DE 69633616 D1 DE69633616 D1 DE 69633616D1 DE 1996633616 DE1996633616 DE 1996633616 DE 69633616 T DE69633616 T DE 69633616T DE 69633616 D1 DE69633616 D1 DE 69633616D1
- Authority
- DE
- Germany
- Prior art keywords
- selective etching
- semiconductive substrate
- substrate relating
- epitactic
- layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000005530 etching Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30612—Etching of AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/469—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers
- H01L21/471—Inorganic layers
- H01L21/473—Inorganic layers composed of oxides or glassy oxides or oxide based glass
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Weting (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/581,233 US5756403A (en) | 1995-12-29 | 1995-12-29 | Method of preferentially etching a semiconductor substrate with respect to epitaxial layers |
PCT/IB1996/001399 WO1997024754A1 (en) | 1995-12-29 | 1996-12-09 | Preferential etch of semiconductor substrate with respect to epitaxial layers |
Publications (1)
Publication Number | Publication Date |
---|---|
DE69633616D1 true DE69633616D1 (de) | 2004-11-18 |
Family
ID=24324384
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE1996633616 Expired - Fee Related DE69633616D1 (de) | 1995-12-29 | 1996-12-09 | Selektive ätzung von halbleitendem substrat in beziehung auf epitaktische schichten |
Country Status (5)
Country | Link |
---|---|
US (1) | US5756403A (de) |
EP (1) | EP0815585B1 (de) |
JP (1) | JPH11502975A (de) |
DE (1) | DE69633616D1 (de) |
WO (1) | WO1997024754A1 (de) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6419554B2 (en) * | 1999-06-24 | 2002-07-16 | Micron Technology, Inc. | Fixed abrasive chemical-mechanical planarization of titanium nitride |
JP3858888B2 (ja) * | 2003-12-02 | 2006-12-20 | ソニー株式会社 | エッチング方法及び半導体装置の製造方法 |
TWI363891B (en) * | 2006-11-14 | 2012-05-11 | Lg Display Co Ltd | Manufacturing method of the flexible display device |
DE102007006151B4 (de) * | 2007-02-07 | 2008-11-06 | Siltronic Ag | Verfahren zur Verringerung und Homogenisierung der Dicke einer Halbleiterschicht, die sich auf der Oberfläche eines elektrisch isolierenden Materials befindet |
CA2736927A1 (en) | 2008-10-03 | 2010-04-08 | Nestec S.A. | User-friendly interface for a beverage machine |
AU2010317053B2 (en) | 2009-11-05 | 2015-07-02 | Nestec S.A. | Remote diagnosis of beverage preparation machines |
AU2010101537A4 (en) | 2009-12-02 | 2016-04-14 | Nestec S.A. | Beverage preparation machine comprising an extended user-advisory functionality |
US8876000B2 (en) | 2009-12-02 | 2014-11-04 | Nestec S.A. | Beverage preparation machine with touch menu functionality |
WO2011067232A1 (en) | 2009-12-02 | 2011-06-09 | Nestec S.A. | Beverage preparation machine supporting a remote service functionality |
JP2013512697A (ja) | 2009-12-02 | 2013-04-18 | ネステク ソシエテ アノニム | カード読み取り装置を備える飲料調製マシン |
ES2433084T3 (es) | 2009-12-02 | 2013-12-09 | Nestec S.A. | Máquina para la preparación de bebidas con funcionalidad de compra virtual |
EP2507773A1 (de) | 2009-12-02 | 2012-10-10 | Nestec S.A. | Getränkezubereitungsautomat mit umgebungsemulationsfunktion |
JP5881683B2 (ja) | 2010-05-21 | 2016-03-09 | ネステク ソシエテ アノニム | 人間工学的なディスペンサインターフェース |
ES2474593T3 (es) | 2010-05-21 | 2014-07-09 | Nestec S.A. | Máquina de bebidas con una gestión ergonómica del agua |
EP2571404B2 (de) | 2010-05-21 | 2017-10-25 | Nestec S.A. | Ergonomischer griff und benutzerschnittstelle |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3237235C2 (de) * | 1982-10-07 | 1986-07-10 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | Verfahren zum Polieren von III-V-Halbleiteroberflächen |
US5071510A (en) * | 1989-09-22 | 1991-12-10 | Robert Bosch Gmbh | Process for anisotropic etching of silicon plates |
CA2028899C (en) * | 1989-10-31 | 1997-03-04 | Teturo Ijichi | Semiconductor laser elements and method for the production thereof |
US5015346A (en) * | 1990-04-10 | 1991-05-14 | United States Department Of Energy | Electrochemical method for defect delineation in silicon-on-insulator wafers |
US5110765A (en) * | 1990-11-30 | 1992-05-05 | At&T Bell Laboratories | Selective etch for GaAs-containing group III-V compounds |
US5279704A (en) * | 1991-04-23 | 1994-01-18 | Honda Giken Kogyo Kabushiki Kaisha | Method of fabricating semiconductor device |
US5419808A (en) * | 1993-03-19 | 1995-05-30 | Mitsubishi Denki Kabushiki Kaisha | Etching solution and etching method for semiconductors |
JP3135185B2 (ja) * | 1993-03-19 | 2001-02-13 | 三菱電機株式会社 | 半導体エッチング液,半導体エッチング方法,及びGaAs面の判定方法 |
US5811839A (en) * | 1994-09-01 | 1998-09-22 | Mitsubishi Chemical Corporation | Semiconductor light-emitting devices |
-
1995
- 1995-12-29 US US08/581,233 patent/US5756403A/en not_active Expired - Fee Related
-
1996
- 1996-12-09 JP JP9524144A patent/JPH11502975A/ja not_active Abandoned
- 1996-12-09 EP EP96939275A patent/EP0815585B1/de not_active Expired - Lifetime
- 1996-12-09 DE DE1996633616 patent/DE69633616D1/de not_active Expired - Fee Related
- 1996-12-09 WO PCT/IB1996/001399 patent/WO1997024754A1/en active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
WO1997024754A1 (en) | 1997-07-10 |
JPH11502975A (ja) | 1999-03-09 |
EP0815585A1 (de) | 1998-01-07 |
US5756403A (en) | 1998-05-26 |
EP0815585B1 (de) | 2004-10-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8320 | Willingness to grant licences declared (paragraph 23) | ||
8339 | Ceased/non-payment of the annual fee |