DE69733471D1 - Verfahren zur Herstellung von Geräten in einem halbleitenden Substrat - Google Patents

Verfahren zur Herstellung von Geräten in einem halbleitenden Substrat

Info

Publication number
DE69733471D1
DE69733471D1 DE69733471T DE69733471T DE69733471D1 DE 69733471 D1 DE69733471 D1 DE 69733471D1 DE 69733471 T DE69733471 T DE 69733471T DE 69733471 T DE69733471 T DE 69733471T DE 69733471 D1 DE69733471 D1 DE 69733471D1
Authority
DE
Germany
Prior art keywords
manufacturing devices
semiconductive substrate
semiconductive
substrate
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69733471T
Other languages
English (en)
Inventor
Giuseppe Queirolo
Giampiero Ottaviani
Gianfranco Cerofolini
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Application granted granted Critical
Publication of DE69733471D1 publication Critical patent/DE69733471D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Drying Of Semiconductors (AREA)
DE69733471T 1997-07-03 1997-07-03 Verfahren zur Herstellung von Geräten in einem halbleitenden Substrat Expired - Fee Related DE69733471D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP97830335A EP0889505B1 (de) 1997-07-03 1997-07-03 Verfahren zur Herstellung von Geräten in einem halbleitenden Substrat

Publications (1)

Publication Number Publication Date
DE69733471D1 true DE69733471D1 (de) 2005-07-14

Family

ID=8230695

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69733471T Expired - Fee Related DE69733471D1 (de) 1997-07-03 1997-07-03 Verfahren zur Herstellung von Geräten in einem halbleitenden Substrat

Country Status (4)

Country Link
US (1) US6303472B1 (de)
EP (1) EP0889505B1 (de)
JP (1) JPH1187491A (de)
DE (1) DE69733471D1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2809867B1 (fr) * 2000-05-30 2003-10-24 Commissariat Energie Atomique Substrat fragilise et procede de fabrication d'un tel substrat
US6579738B2 (en) * 2000-12-15 2003-06-17 Micron Technology, Inc. Method of alignment for buried structures formed by surface transformation of empty spaces in solid state materials
US20040084407A1 (en) * 2002-10-31 2004-05-06 Nptest, Inc. Method for surface preparation to enable uniform etching of polycrystalline materials
EP1864121A2 (de) * 2005-03-14 2007-12-12 QC Solutions, Inc. Halbleiterwafermetrologie-vorrichtung und -verfahren
US7657390B2 (en) * 2005-11-02 2010-02-02 Applied Materials, Inc. Reclaiming substrates having defects and contaminants
JP4720587B2 (ja) * 2006-04-10 2011-07-13 株式会社デンソー 超音波センサ
US8124506B2 (en) * 2008-08-14 2012-02-28 Varian Semiconductor Equipment Associates, Inc. USJ techniques with helium-treated substrates

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3982967A (en) * 1975-03-26 1976-09-28 Ibm Corporation Method of proton-enhanced diffusion for simultaneously forming integrated circuit regions of varying depths
US4749660A (en) * 1986-11-26 1988-06-07 American Telephone And Telegraph Company, At&T Bell Laboratories Method of making an article comprising a buried SiO2 layer
GB8725497D0 (en) * 1987-10-30 1987-12-02 Atomic Energy Authority Uk Isolation of silicon
FR2681472B1 (fr) * 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
US5416043A (en) * 1993-07-12 1995-05-16 Peregrine Semiconductor Corporation Minimum charge FET fabricated on an ultrathin silicon on sapphire wafer
FR2714524B1 (fr) * 1993-12-23 1996-01-26 Commissariat Energie Atomique Procede de realisation d'une structure en relief sur un support en materiau semiconducteur
FR2715502B1 (fr) * 1994-01-26 1996-04-05 Commissariat Energie Atomique Structure présentant des cavités et procédé de réalisation d'une telle structure.
FR2748851B1 (fr) * 1996-05-15 1998-08-07 Commissariat Energie Atomique Procede de realisation d'une couche mince de materiau semiconducteur
US5877070A (en) * 1997-05-31 1999-03-02 Max-Planck Society Method for the transfer of thin layers of monocrystalline material to a desirable substrate

Also Published As

Publication number Publication date
EP0889505B1 (de) 2005-06-08
JPH1187491A (ja) 1999-03-30
US6303472B1 (en) 2001-10-16
EP0889505A1 (de) 1999-01-07

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Legal Events

Date Code Title Description
8339 Ceased/non-payment of the annual fee