DE69632955D1 - Herstellungsverfahren für hochohmwiderstände zur kathodenstrombegrenzung in feldemissionsanzeigen - Google Patents
Herstellungsverfahren für hochohmwiderstände zur kathodenstrombegrenzung in feldemissionsanzeigenInfo
- Publication number
- DE69632955D1 DE69632955D1 DE69632955T DE69632955T DE69632955D1 DE 69632955 D1 DE69632955 D1 DE 69632955D1 DE 69632955 T DE69632955 T DE 69632955T DE 69632955 T DE69632955 T DE 69632955T DE 69632955 D1 DE69632955 D1 DE 69632955D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- field emission
- cathode current
- current limitation
- emission displays
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
- H01L28/24—Resistors with an active material comprising a refractory, transition or noble metal, metal compound or metal alloy, e.g. silicides, oxides, nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
- H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/319—Circuit elements associated with the emitters by direct integration
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Cold Cathode And The Manufacture (AREA)
- Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
- Electrodes For Cathode-Ray Tubes (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US502388 | 1990-03-30 | ||
US08/502,388 US5585301A (en) | 1995-07-14 | 1995-07-14 | Method for forming high resistance resistors for limiting cathode current in field emission displays |
PCT/US1996/011643 WO1997004482A1 (en) | 1995-07-14 | 1996-07-12 | Method for forming high resistance resistors for limiting cathode current in field emission displays |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69632955D1 true DE69632955D1 (de) | 2004-08-26 |
DE69632955T2 DE69632955T2 (de) | 2005-09-15 |
Family
ID=23997593
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69632955T Expired - Lifetime DE69632955T2 (de) | 1995-07-14 | 1996-07-12 | Herstellungsverfahren für hochohmwiderstände zur kathodenstrombegrenzung in feldemissionsanzeigen |
Country Status (5)
Country | Link |
---|---|
US (2) | US5585301A (de) |
EP (1) | EP0839387B1 (de) |
JP (2) | JP3116309B2 (de) |
DE (1) | DE69632955T2 (de) |
WO (1) | WO1997004482A1 (de) |
Families Citing this family (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5652181A (en) * | 1993-11-10 | 1997-07-29 | Micron Display Technology, Inc. | Thermal process for forming high value resistors |
US5920296A (en) * | 1995-02-01 | 1999-07-06 | Pixel International | Flat screen having individually dipole-protected microdots |
US5585301A (en) * | 1995-07-14 | 1996-12-17 | Micron Display Technology, Inc. | Method for forming high resistance resistors for limiting cathode current in field emission displays |
WO1997006549A1 (en) * | 1995-08-04 | 1997-02-20 | Printable Field Emmitters Limited | Field electron emission materials and devices |
KR100201553B1 (ko) * | 1995-09-25 | 1999-06-15 | 하제준 | Mosfet를 일체화한 전계방출 어레이의 구조 및 그 제조 방법 |
US6181308B1 (en) | 1995-10-16 | 2001-01-30 | Micron Technology, Inc. | Light-insensitive resistor for current-limiting of field emission displays |
US5789851A (en) * | 1995-12-15 | 1998-08-04 | Balzers Aktiengesellschaft | Field emission device |
US20010045794A1 (en) * | 1996-01-19 | 2001-11-29 | Alwan James J. | Cap layer on glass panels for improving tip uniformity in cold cathode field emission technology |
JP2856135B2 (ja) * | 1996-01-30 | 1999-02-10 | 日本電気株式会社 | 電界放出冷陰極素子の固定構造及び固定方法 |
JP3134772B2 (ja) * | 1996-04-16 | 2001-02-13 | 双葉電子工業株式会社 | 電界放出型表示素子およびその駆動方法 |
US5757138A (en) * | 1996-05-01 | 1998-05-26 | Industrial Technology Research Institute | Linear response field emission device |
US5668437A (en) | 1996-05-14 | 1997-09-16 | Micro Display Technology, Inc. | Praseodymium-manganese oxide layer for use in field emission displays |
US5770919A (en) * | 1996-12-31 | 1998-06-23 | Micron Technology, Inc. | Field emission device micropoint with current-limiting resistive structure and method for making same |
US6144351A (en) * | 1997-02-19 | 2000-11-07 | Micron Technology, Inc. | Field emitter display baseplate and method of fabricating same |
US5903100A (en) * | 1997-03-07 | 1999-05-11 | Industrial Technology Research Institute | Reduction of smearing in cold cathode displays |
US5970340A (en) | 1997-06-24 | 1999-10-19 | Micron Technology, Inc. | Method for making semiconductor device incorporating an electrical contact to an internal conductive layer |
US5956611A (en) * | 1997-09-03 | 1999-09-21 | Micron Technologies, Inc. | Field emission displays with reduced light leakage |
US6165568A (en) * | 1998-02-09 | 2000-12-26 | Micron Technology, Inc. | Methods for forming field emission display devices |
US6458645B2 (en) * | 1998-02-26 | 2002-10-01 | Micron Technology, Inc. | Capacitor having tantalum oxynitride film and method for making same |
US6028322A (en) * | 1998-07-22 | 2000-02-22 | Micron Technology, Inc. | Double field oxide in field emission display and method |
US6278229B1 (en) | 1998-07-29 | 2001-08-21 | Micron Technology, Inc. | Field emission displays having a light-blocking layer in the extraction grid |
US6436788B1 (en) | 1998-07-30 | 2002-08-20 | Micron Technology, Inc. | Field emission display having reduced optical sensitivity and method |
US6133693A (en) * | 1998-07-30 | 2000-10-17 | Alliedsignal Inc. | Interconnects and electrodes for high luminance emissive displays |
US6710538B1 (en) | 1998-08-26 | 2004-03-23 | Micron Technology, Inc. | Field emission display having reduced power requirements and method |
US6197607B1 (en) | 1999-03-01 | 2001-03-06 | Micron Technology, Inc. | Method of fabricating field emission arrays to optimize the size of grid openings and to minimize the occurrence of electrical shorts |
US6008063A (en) | 1999-03-01 | 1999-12-28 | Micron Technology, Inc. | Method of fabricating row lines of a field emission array and forming pixel openings therethrough |
US6059625A (en) | 1999-03-01 | 2000-05-09 | Micron Technology, Inc. | Method of fabricating field emission arrays employing a hard mask to define column lines |
US6017772A (en) | 1999-03-01 | 2000-01-25 | Micron Technology, Inc. | Field emission arrays and method of fabricating emitter tips and corresponding resistors thereof with a single mask |
US6369497B1 (en) * | 1999-03-01 | 2002-04-09 | Micron Technology, Inc. | Method of fabricating row lines of a field emission array and forming pixel openings therethrough by employing two masks |
US6822386B2 (en) * | 1999-03-01 | 2004-11-23 | Micron Technology, Inc. | Field emitter display assembly having resistor layer |
US6635983B1 (en) * | 1999-09-02 | 2003-10-21 | Micron Technology, Inc. | Nitrogen and phosphorus doped amorphous silicon as resistor for field emission device baseplate |
US6373174B1 (en) * | 1999-12-10 | 2002-04-16 | Motorola, Inc. | Field emission device having a surface passivation layer |
JP4107792B2 (ja) * | 2000-08-28 | 2008-06-25 | 独立行政法人科学技術振興機構 | 可視光応答性を有する金属オキシナイトライドからなる光触媒 |
KR100477321B1 (ko) * | 2002-01-12 | 2005-03-18 | 김형수 | 스티렌계 영구제전성 수지 조성물의 제조방법 |
US20050212448A1 (en) * | 2002-11-20 | 2005-09-29 | Makoto Shibusawa | Organic EL display and active matrix substrate |
US7078306B1 (en) * | 2003-03-24 | 2006-07-18 | Integrated Device Technology, Inc. | Method for forming a thin film resistor structure |
US6720569B1 (en) * | 2003-05-13 | 2004-04-13 | Motorola, Inc. | Electro-optical device including a field emission array and photoconductive layer |
KR20060092512A (ko) * | 2005-02-18 | 2006-08-23 | 삼성에스디아이 주식회사 | 전자방출소자 및 그 제작 방법과 이를 채용한 전자방출 표시장치 |
JP2008041460A (ja) * | 2006-08-07 | 2008-02-21 | National Institute Of Advanced Industrial & Technology | 電界放出素子用エミッタ作製方法 |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3500102A (en) * | 1967-05-15 | 1970-03-10 | Us Army | Thin electron tube with electron emitters at intersections of crossed conductors |
US3671798A (en) * | 1970-12-11 | 1972-06-20 | Nasa | Method and apparatus for limiting field-emission current |
US3814968A (en) * | 1972-02-11 | 1974-06-04 | Lucas Industries Ltd | Solid state radiation sensitive field electron emitter and methods of fabrication thereof |
US3970887A (en) * | 1974-06-19 | 1976-07-20 | Micro-Bit Corporation | Micro-structure field emission electron source |
NL184589C (nl) * | 1979-07-13 | 1989-09-01 | Philips Nv | Halfgeleiderinrichting voor het opwekken van een elektronenbundel en werkwijze voor het vervaardigen van een dergelijke halfgeleiderinrichting. |
FR2623013A1 (fr) * | 1987-11-06 | 1989-05-12 | Commissariat Energie Atomique | Source d'electrons a cathodes emissives a micropointes et dispositif de visualisation par cathodoluminescence excitee par emission de champ,utilisant cette source |
US5142184B1 (en) * | 1990-02-09 | 1995-11-21 | Motorola Inc | Cold cathode field emission device with integral emitter ballasting |
US5212426A (en) * | 1991-01-24 | 1993-05-18 | Motorola, Inc. | Integrally controlled field emission flat display device |
JP2626276B2 (ja) * | 1991-02-06 | 1997-07-02 | 双葉電子工業株式会社 | 電子放出素子 |
US5318918A (en) * | 1991-12-31 | 1994-06-07 | Texas Instruments Incorporated | Method of making an array of electron emitters |
US5151061A (en) * | 1992-02-21 | 1992-09-29 | Micron Technology, Inc. | Method to form self-aligned tips for flat panel displays |
US5186670A (en) * | 1992-03-02 | 1993-02-16 | Micron Technology, Inc. | Method to form self-aligned gate structures and focus rings |
US5210472A (en) * | 1992-04-07 | 1993-05-11 | Micron Technology, Inc. | Flat panel display in which low-voltage row and column address signals control a much pixel activation voltage |
US5319233A (en) * | 1992-05-13 | 1994-06-07 | Motorola, Inc. | Field emission device employing a layer of single-crystal silicon |
US5283500A (en) * | 1992-05-28 | 1994-02-01 | At&T Bell Laboratories | Flat panel field emission display apparatus |
US5378962A (en) * | 1992-05-29 | 1995-01-03 | The United States Of America As Represented By The Secretary Of The Navy | Method and apparatus for a high resolution, flat panel cathodoluminescent display device |
US5359256A (en) * | 1992-07-30 | 1994-10-25 | The United States Of America As Represented By The Secretary Of The Navy | Regulatable field emitter device and method of production thereof |
JP3142388B2 (ja) * | 1992-09-16 | 2001-03-07 | 富士通株式会社 | 陰極装置 |
JP2861755B2 (ja) * | 1993-10-28 | 1999-02-24 | 日本電気株式会社 | 電界放出型陰極装置 |
US5550426A (en) * | 1994-06-30 | 1996-08-27 | Motorola | Field emission device |
US5525857A (en) * | 1994-08-19 | 1996-06-11 | Texas Instruments Inc. | Low density, high porosity material as gate dielectric for field emission device |
US5502347A (en) * | 1994-10-06 | 1996-03-26 | Motorola, Inc. | Electron source |
US5578896A (en) * | 1995-04-10 | 1996-11-26 | Industrial Technology Research Institute | Cold cathode field emission display and method for forming it |
US5585301A (en) * | 1995-07-14 | 1996-12-17 | Micron Display Technology, Inc. | Method for forming high resistance resistors for limiting cathode current in field emission displays |
-
1995
- 1995-07-14 US US08/502,388 patent/US5585301A/en not_active Expired - Lifetime
-
1996
- 1996-07-12 JP JP09506764A patent/JP3116309B2/ja not_active Expired - Fee Related
- 1996-07-12 WO PCT/US1996/011643 patent/WO1997004482A1/en active IP Right Grant
- 1996-07-12 EP EP96924472A patent/EP0839387B1/de not_active Expired - Lifetime
- 1996-07-12 DE DE69632955T patent/DE69632955T2/de not_active Expired - Lifetime
- 1996-07-29 US US08/688,098 patent/US5712534A/en not_active Expired - Lifetime
-
2000
- 2000-01-31 JP JP2000021971A patent/JP3116324B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP3116324B2 (ja) | 2000-12-11 |
JPH10511215A (ja) | 1998-10-27 |
US5712534A (en) | 1998-01-27 |
JP2000164116A (ja) | 2000-06-16 |
US5585301A (en) | 1996-12-17 |
EP0839387A4 (de) | 1999-03-24 |
JP3116309B2 (ja) | 2000-12-11 |
DE69632955T2 (de) | 2005-09-15 |
EP0839387B1 (de) | 2004-07-21 |
WO1997004482A1 (en) | 1997-02-06 |
EP0839387A1 (de) | 1998-05-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |