DE69627645T2 - Integrierter piezoresistiver Druckwandler und Herstellungsverfahren dazu - Google Patents

Integrierter piezoresistiver Druckwandler und Herstellungsverfahren dazu Download PDF

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Publication number
DE69627645T2
DE69627645T2 DE69627645T DE69627645T DE69627645T2 DE 69627645 T2 DE69627645 T2 DE 69627645T2 DE 69627645 T DE69627645 T DE 69627645T DE 69627645 T DE69627645 T DE 69627645T DE 69627645 T2 DE69627645 T2 DE 69627645T2
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Germany
Prior art keywords
layer
membrane
semiconductor zone
semiconductor
trench
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69627645T
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German (de)
English (en)
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DE69627645D1 (de
Inventor
Benedetto Vigna
Paolo Ferrari
Flavio Villa
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STMicroelectronics SRL
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STMicroelectronics SRL
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Publication of DE69627645D1 publication Critical patent/DE69627645D1/de
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Publication of DE69627645T2 publication Critical patent/DE69627645T2/de
Anticipated expiration legal-status Critical
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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0055—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements bonded on a diaphragm

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)
  • Micromachines (AREA)
DE69627645T 1996-07-31 1996-07-31 Integrierter piezoresistiver Druckwandler und Herstellungsverfahren dazu Expired - Fee Related DE69627645T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP96830435A EP0822398B1 (en) 1996-07-31 1996-07-31 Integrated piezoresistive pressure sensor and relative fabrication method

Publications (2)

Publication Number Publication Date
DE69627645D1 DE69627645D1 (de) 2003-05-28
DE69627645T2 true DE69627645T2 (de) 2004-02-05

Family

ID=8225986

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69627645T Expired - Fee Related DE69627645T2 (de) 1996-07-31 1996-07-31 Integrierter piezoresistiver Druckwandler und Herstellungsverfahren dazu

Country Status (4)

Country Link
US (2) US6131466A (ja)
EP (1) EP0822398B1 (ja)
JP (1) JP4298807B2 (ja)
DE (1) DE69627645T2 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7698950B2 (en) 2008-04-04 2010-04-20 Wika Alexander Wiegand Gmbh & Co. Kg Pressure sensor assembly for measuring absolute pressure

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6388279B1 (en) * 1997-06-11 2002-05-14 Denso Corporation Semiconductor substrate manufacturing method, semiconductor pressure sensor and manufacturing method thereof
DE19839122A1 (de) * 1998-08-27 2000-03-09 Siemens Ag Vor Umwelteinflüssen geschützter mikromechanischer Sensor
DE19932541B4 (de) * 1999-07-13 2011-07-28 Robert Bosch GmbH, 70469 Verfahren zur Herstellung einer Membran
WO2001019663A1 (en) * 1999-09-16 2001-03-22 Delphi Technologies, Inc. Piezoresistive torque sensor
US7011326B1 (en) 1999-09-16 2006-03-14 Delphi Technologies, Inc. Piezoresistive torque sensor
US6586841B1 (en) * 2000-02-23 2003-07-01 Onix Microsystems, Inc. Mechanical landing pad formed on the underside of a MEMS device
JP4710147B2 (ja) * 2000-06-13 2011-06-29 株式会社デンソー 半導体圧力センサ
ITVA20000042A1 (it) * 2000-12-15 2002-06-15 St Microelectronics Srl Sensore di pressione monoliticamente integrato e relativo processo direalizzazione.
DE10114862B9 (de) * 2001-03-26 2007-04-26 First Sensor Technology Gmbh Drucksensoreinrichtung
FI114755B (fi) 2001-10-01 2004-12-15 Valtion Teknillinen Menetelmä ontelorakenteen muodostamiseksi SOI-kiekolle sekä SOI-kiekon ontelorakenne
SE0103471D0 (sv) 2001-10-15 2001-10-15 Silex Microsystems Ab Electrum Pressure sensor
US6608370B1 (en) * 2002-01-28 2003-08-19 Motorola, Inc. Semiconductor wafer having a thin die and tethers and methods of making the same
JP3974537B2 (ja) 2003-02-18 2007-09-12 沖電気工業株式会社 半導体装置および半導体装置の製造方法
US7082834B2 (en) * 2003-06-18 2006-08-01 New Jersey Institute Of Technology Flexible thin film pressure sensor
DE10359217A1 (de) * 2003-12-17 2005-07-28 Robert Bosch Gmbh Elektrische Durchkontaktierung von HL-Chips
EP1577656B1 (en) 2004-03-19 2010-06-09 STMicroelectronics Srl Method for manufacturing a semiconductor pressure sensor
US7032456B1 (en) * 2004-12-30 2006-04-25 The United States Of America As Represented By The Secretary Of The Navy Isostatic piezoresistive pressure transducer with temperature output
CN101209382B (zh) * 2006-12-27 2010-06-23 鸿富锦精密工业（深圳）有限公司 动作传感装置
US7412892B1 (en) 2007-06-06 2008-08-19 Measurement Specialties, Inc. Method of making pressure transducer and apparatus
JP4655083B2 (ja) * 2007-11-16 2011-03-23 セイコーエプソン株式会社 微小電気機械装置
JP4600468B2 (ja) * 2007-12-10 2010-12-15 セイコーエプソン株式会社 半導体圧力センサ及びその製造方法、半導体装置並びに電子機器
JP5195102B2 (ja) * 2008-07-11 2013-05-08 大日本印刷株式会社 センサおよびその製造方法
US20100109104A1 (en) * 2008-10-30 2010-05-06 Radi Medical Systems Ab Pressure sensor and wire guide assembly
EP2182340A1 (en) 2008-10-30 2010-05-05 Radi Medical Systems AB Pressure Sensor and Guide Wire Assembly
US8196475B2 (en) * 2009-03-16 2012-06-12 Kavlico Corporation Cointegrated MEMS sensor and method
JP5206726B2 (ja) * 2010-04-12 2013-06-12 株式会社デンソー 力学量検出装置およびその製造方法
JP5024738B2 (ja) * 2010-10-18 2012-09-12 セイコーエプソン株式会社 微小電気機械装置
CN102156012A (zh) * 2011-03-15 2011-08-17 迈尔森电子（天津）有限公司 Mems压力传感器及其制作方法
US9162876B2 (en) 2011-03-18 2015-10-20 Stmicroelectronics S.R.L. Process for manufacturing a membrane microelectromechanical device, and membrane microelectromechanical device
RU2474007C1 (ru) * 2011-09-08 2013-01-27 Федеральное Государственное Бюджетное Учреждение "Научно-Производственный Комплекс "Технологический Центр" Миэт" Конструкция чувствительного элемента преобразователя давления на кни-структуре
US8558330B2 (en) * 2011-10-31 2013-10-15 Taiwan Semiconductor Manufacturing Co., Ltd. Deep well process for MEMS pressure sensor
SE1151051A1 (sv) 2011-11-09 2013-05-10 Koninklijke Philips Electronics Nv Sensorstyrtråd
CN104931188A (zh) * 2014-03-20 2015-09-23 立锜科技股份有限公司 微机电压力计以及其制作方法
CN104266781A (zh) * 2014-10-09 2015-01-07 苏州敏芯微电子技术有限公司 压阻式压力传感器及其制造方法
US10023461B2 (en) 2014-10-31 2018-07-17 Stmicroelectronics S.R.L. Microintegrated encapsulated MEMS sensor with mechanical decoupling and manufacturing process thereof
CN105651450B (zh) * 2014-11-14 2018-07-06 中芯国际集成电路制造(上海)有限公司 压力传感器及其形成方法
IT201700019426A1 (it) 2017-02-21 2018-08-21 St Microelectronics Srl Sensore di forza/pressione microelettromeccanico scalabile piezoresistivo di tipo bulk
IT201800001092A1 (it) * 2018-01-16 2019-07-16 St Microelectronics Srl Sensore di pressione piezoresistivo microelettromeccanico con capacita' di auto-diagnosi e relativo procedimento di fabbricazione
CN116429300B (zh) * 2023-06-12 2023-09-22 之江实验室 基于单晶硅和微流道冷却的超高温压力传感芯片及系统

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1399988A (en) * 1972-10-02 1975-07-02 Motorola Inc Silicon pressure sensor
US3893228A (en) * 1972-10-02 1975-07-08 Motorola Inc Silicon pressure sensor
US4320664A (en) * 1980-02-25 1982-03-23 Texas Instruments Incorporated Thermally compensated silicon pressure sensor
US4510671A (en) * 1981-08-31 1985-04-16 Kulite Semiconductor Products, Inc. Dielectrically isolated transducer employing single crystal strain gages
US4766666A (en) * 1985-09-30 1988-08-30 Kabushiki Kaisha Toyota Chuo Kenkyusho Semiconductor pressure sensor and method of manufacturing the same
US5095401A (en) * 1989-01-13 1992-03-10 Kopin Corporation SOI diaphragm sensor
CN1018844B (zh) * 1990-06-02 1992-10-28 中国科学院兰州化学物理研究所 防锈干膜润滑剂
FR2700003B1 (fr) * 1992-12-28 1995-02-10 Commissariat Energie Atomique Procédé de fabrication d'un capteur de pression utilisant la technologie silicium sur isolant et capteur obtenu.

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7698950B2 (en) 2008-04-04 2010-04-20 Wika Alexander Wiegand Gmbh & Co. Kg Pressure sensor assembly for measuring absolute pressure

Also Published As

Publication number Publication date
DE69627645D1 (de) 2003-05-28
EP0822398B1 (en) 2003-04-23
US6417021B1 (en) 2002-07-09
US6131466A (en) 2000-10-17
JP4298807B2 (ja) 2009-07-22
JPH10135487A (ja) 1998-05-22
EP0822398A1 (en) 1998-02-04

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