DE69626886T2 - Ein MOS-Schaltkreis - Google Patents

Ein MOS-Schaltkreis

Info

Publication number
DE69626886T2
DE69626886T2 DE69626886T DE69626886T DE69626886T2 DE 69626886 T2 DE69626886 T2 DE 69626886T2 DE 69626886 T DE69626886 T DE 69626886T DE 69626886 T DE69626886 T DE 69626886T DE 69626886 T2 DE69626886 T2 DE 69626886T2
Authority
DE
Germany
Prior art keywords
mos circuit
mos
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69626886T
Other languages
English (en)
Other versions
DE69626886D1 (de
Inventor
Vladimir Koifman
Yachin Afek
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of DE69626886D1 publication Critical patent/DE69626886D1/de
Application granted granted Critical
Publication of DE69626886T2 publication Critical patent/DE69626886T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06—Modifications for ensuring a fully conducting state
    • H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0018—Special modifications or use of the back gate voltage of a FET
DE69626886T 1995-06-01 1996-05-28 Ein MOS-Schaltkreis Expired - Fee Related DE69626886T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB9511122A GB2301720B (en) 1995-06-01 1995-06-01 A MOS switching circuit

Publications (2)

Publication Number Publication Date
DE69626886D1 DE69626886D1 (de) 2003-04-30
DE69626886T2 true DE69626886T2 (de) 2003-09-25

Family

ID=10775369

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69626886T Expired - Fee Related DE69626886T2 (de) 1995-06-01 1996-05-28 Ein MOS-Schaltkreis

Country Status (5)

Country Link
US (1) US5905397A (de)
EP (1) EP0746099B1 (de)
JP (1) JP3396580B2 (de)
DE (1) DE69626886T2 (de)
GB (1) GB2301720B (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6137321A (en) * 1999-01-12 2000-10-24 Qualcomm Incorporated Linear sampling switch
US6515612B1 (en) 2001-10-23 2003-02-04 Agere Systems, Inc. Method and system to reduce signal-dependent charge drawn from reference voltage in switched capacitor circuits
US6566934B1 (en) * 2001-12-31 2003-05-20 International Business Machines Corporation Charge cancellation circuit for switched capacitor applications
JP4933036B2 (ja) * 2003-07-03 2012-05-16 パナソニック株式会社 差動容量素子、差動アンテナ素子及び差動共振素子

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3708694A (en) * 1971-05-20 1973-01-02 Siliconix Inc Voltage limiter
US3740581A (en) * 1972-03-08 1973-06-19 Hughes Aircraft Co Precision switching circuit for analog signals
DE3226339C2 (de) * 1981-07-17 1985-12-19 Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa Analoge Schaltervorrichtung mit MOS-Transistoren
US4734599A (en) * 1985-04-30 1988-03-29 Hughes Aircraft Company Circuit for multiplying a pump clock voltage
US5084634A (en) * 1990-10-24 1992-01-28 Burr-Brown Corporation Dynamic input sampling switch for CDACS
US5170075A (en) * 1991-06-11 1992-12-08 Texas Instruments Incorporated Sample and hold circuitry and methods
US5126590A (en) * 1991-06-17 1992-06-30 Micron Technology, Inc. High efficiency charge pump
US5187390A (en) * 1991-07-12 1993-02-16 Crystal Semiconductor Corporation Input sampling switch charge conservation
US5333093A (en) * 1991-11-06 1994-07-26 Siemens Aktiengesellschaft Protection apparatus for series pass MOSFETS
US5172019A (en) * 1992-01-17 1992-12-15 Burr-Brown Corporation Bootstrapped FET sampling switch
JP3158728B2 (ja) * 1992-09-24 2001-04-23 ソニー株式会社 半導体スイッチ回路
JP2524380Y2 (ja) * 1992-11-27 1997-01-29 双葉電子工業株式会社 ラジコン送信機の電源制御回路
JPH06208423A (ja) * 1993-01-12 1994-07-26 Mitsubishi Electric Corp 電源回路
JP3307453B2 (ja) * 1993-03-18 2002-07-24 ソニー株式会社 昇圧回路
US5422586A (en) * 1993-09-10 1995-06-06 Intel Corporation Apparatus for a two phase bootstrap charge pump
GB2283626B (en) * 1993-11-05 1998-02-18 Motorola Inc Driver circuits
JPH07175535A (ja) * 1993-12-16 1995-07-14 Nec Corp Ｆｅｔ増幅器用電源回路

Also Published As

Publication number Publication date
DE69626886D1 (de) 2003-04-30
US5905397A (en) 1999-05-18
JP3396580B2 (ja) 2003-04-14
GB2301720B (en) 2000-05-24
EP0746099A3 (de) 1998-01-07
EP0746099A2 (de) 1996-12-04
JPH0918316A (ja) 1997-01-17
EP0746099B1 (de) 2003-03-26
GB2301720A (en) 1996-12-11
GB9511122D0 (en) 1995-07-26

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: FREESCALE SEMICONDUCTOR, INC., AUSTIN, TEX., US

8339 Ceased/non-payment of the annual fee