DE69620371D1 - Verfahren zur Messung von Dimensionen von Mustern auf einer Probe - Google Patents

Verfahren zur Messung von Dimensionen von Mustern auf einer Probe

Info

Publication number
DE69620371D1
DE69620371D1 DE69620371T DE69620371T DE69620371D1 DE 69620371 D1 DE69620371 D1 DE 69620371D1 DE 69620371 T DE69620371 T DE 69620371T DE 69620371 T DE69620371 T DE 69620371T DE 69620371 D1 DE69620371 D1 DE 69620371D1
Authority
DE
Germany
Prior art keywords
samples
sample
measuring dimensions
dimensions
measuring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69620371T
Other languages
English (en)
Other versions
DE69620371T2 (de
Inventor
Fumio Mizuno
Osamu Satoh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE69620371D1 publication Critical patent/DE69620371D1/de
Application granted granted Critical
Publication of DE69620371T2 publication Critical patent/DE69620371T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/02—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material
    • G01N23/04—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material and forming images of the material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y35/00—Methods or apparatus for measurement or analysis of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2813—Scanning microscopes characterised by the application
    • H01J2237/2814—Measurement of surface topography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2813—Scanning microscopes characterised by the application
    • H01J2237/2817—Pattern inspection

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Electromagnetism (AREA)
  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
DE69620371T 1995-12-28 1996-12-20 Verfahren zur Messung von Dimensionen von Mustern auf einer Probe Expired - Lifetime DE69620371T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7342932A JPH09184714A (ja) 1995-12-28 1995-12-28 パターン寸法測定方法

Publications (2)

Publication Number Publication Date
DE69620371D1 true DE69620371D1 (de) 2002-05-08
DE69620371T2 DE69620371T2 (de) 2002-08-14

Family

ID=18357637

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69637937T Expired - Lifetime DE69637937D1 (de) 1995-12-28 1996-12-20 Verfahren und Apparat zur Messung von Musterdimensionen
DE69620371T Expired - Lifetime DE69620371T2 (de) 1995-12-28 1996-12-20 Verfahren zur Messung von Dimensionen von Mustern auf einer Probe

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE69637937T Expired - Lifetime DE69637937D1 (de) 1995-12-28 1996-12-20 Verfahren und Apparat zur Messung von Musterdimensionen

Country Status (4)

Country Link
US (1) US5750990A (de)
EP (2) EP1102031B1 (de)
JP (1) JPH09184714A (de)
DE (2) DE69637937D1 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109540050A (zh) * 2017-09-22 2019-03-29 三星电子株式会社 关键尺寸测量系统和使用其测量关键尺寸的方法

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US6452677B1 (en) * 1998-02-13 2002-09-17 Micron Technology Inc. Method and apparatus for detecting defects in the manufacture of an electronic device
US6476388B1 (en) * 1998-10-19 2002-11-05 Hitachi, Ltd. Scanning electron microscope having magnification switching control
US6517669B2 (en) * 1999-02-26 2003-02-11 Micron Technology, Inc. Apparatus and method of detecting endpoint of a dielectric etch
US6068955A (en) * 1999-03-19 2000-05-30 Vlsi Technology, Inc. Methods of inspecting for mask-defined, feature dimensional conformity between multiple masks
US6373053B1 (en) * 2000-01-31 2002-04-16 Advanced Micro Devices, Inc. Analysis of CD-SEM signal to detect scummed/closed contact holes and lines
JP2001304840A (ja) * 2000-04-26 2001-10-31 Advantest Corp 電子ビーム測長装置及び測長方法
US6627887B1 (en) * 2000-06-20 2003-09-30 Advanced Micro Devices, Inc. System and method for constructing a profile of a structure in an integrated circuit
US6563116B1 (en) * 2000-10-26 2003-05-13 General Miosphorix Llc Method of measuring sizes of trapezoidal structure
KR100383258B1 (ko) * 2000-11-09 2003-05-09 삼성전자주식회사 주사 전자 현미경을 이용한 측정 장치의 측정 에러 검출방법
DE10108827C2 (de) 2001-02-23 2003-01-30 Infineon Technologies Ag Messverfahren zur Bestimmung der Breite einer Struktur auf einer Maske
JP4035974B2 (ja) * 2001-09-26 2008-01-23 株式会社日立製作所 欠陥観察方法及びその装置
US7274820B2 (en) * 2001-09-26 2007-09-25 Kabushiki Kaisha Toshiba Pattern evaluation system, pattern evaluation method and program
JP3944373B2 (ja) * 2001-10-12 2007-07-11 株式会社日立ハイテクノロジーズ 試料の測長方法、及び走査顕微鏡
JP2003329563A (ja) * 2002-05-16 2003-11-19 Seiko Instruments Inc 走査型プローブ顕微鏡
DE10250893B4 (de) * 2002-10-31 2008-04-03 Advanced Micro Devices, Inc., Sunnyvale Verfahren und Vorrichtung zum Bestimmen der Abmessung eines Strukturelements durch Variieren eines die Auflösung bestimmenden Parameters
US20040234106A1 (en) * 2003-05-23 2004-11-25 Luu Victor Van Method and apparatus for providing nanoscale dimensions to SEM (Scanning Electron Microscopy) or other nanoscopic images
US7511280B2 (en) * 2003-10-16 2009-03-31 Alis Corporation Ion sources, systems and methods
US7485873B2 (en) * 2003-10-16 2009-02-03 Alis Corporation Ion sources, systems and methods
US7368727B2 (en) 2003-10-16 2008-05-06 Alis Technology Corporation Atomic level ion source and method of manufacture and operation
US7414243B2 (en) * 2005-06-07 2008-08-19 Alis Corporation Transmission ion microscope
US20070228287A1 (en) * 2006-03-20 2007-10-04 Alis Technology Corporation Systems and methods for a gas field ionization source
US7511279B2 (en) * 2003-10-16 2009-03-31 Alis Corporation Ion sources, systems and methods
US7786451B2 (en) * 2003-10-16 2010-08-31 Alis Corporation Ion sources, systems and methods
US7488952B2 (en) * 2003-10-16 2009-02-10 Alis Corporation Ion sources, systems and methods
US7557361B2 (en) * 2003-10-16 2009-07-07 Alis Corporation Ion sources, systems and methods
US7521693B2 (en) * 2003-10-16 2009-04-21 Alis Corporation Ion sources, systems and methods
US7601953B2 (en) * 2006-03-20 2009-10-13 Alis Corporation Systems and methods for a gas field ion microscope
US8110814B2 (en) 2003-10-16 2012-02-07 Alis Corporation Ion sources, systems and methods
US7495232B2 (en) * 2003-10-16 2009-02-24 Alis Corporation Ion sources, systems and methods
US7504639B2 (en) * 2003-10-16 2009-03-17 Alis Corporation Ion sources, systems and methods
US7557358B2 (en) * 2003-10-16 2009-07-07 Alis Corporation Ion sources, systems and methods
US7321118B2 (en) * 2005-06-07 2008-01-22 Alis Corporation Scanning transmission ion microscope
US7786452B2 (en) * 2003-10-16 2010-08-31 Alis Corporation Ion sources, systems and methods
US7554096B2 (en) * 2003-10-16 2009-06-30 Alis Corporation Ion sources, systems and methods
US9159527B2 (en) * 2003-10-16 2015-10-13 Carl Zeiss Microscopy, Llc Systems and methods for a gas field ionization source
US7554097B2 (en) * 2003-10-16 2009-06-30 Alis Corporation Ion sources, systems and methods
US7518122B2 (en) * 2003-10-16 2009-04-14 Alis Corporation Ion sources, systems and methods
US7557359B2 (en) * 2003-10-16 2009-07-07 Alis Corporation Ion sources, systems and methods
US7557360B2 (en) * 2003-10-16 2009-07-07 Alis Corporation Ion sources, systems and methods
JP4476733B2 (ja) 2004-07-30 2010-06-09 株式会社東芝 パターン評価方法、プログラムおよびパターン評価装置
JP4587742B2 (ja) * 2004-08-23 2010-11-24 株式会社日立ハイテクノロジーズ 荷電粒子線顕微方法及び荷電粒子線応用装置
US7662648B2 (en) * 2005-08-31 2010-02-16 Micron Technology, Inc. Integrated circuit inspection system
US20070116373A1 (en) * 2005-11-23 2007-05-24 Sonosite, Inc. Multi-resolution adaptive filtering
US20070227883A1 (en) * 2006-03-20 2007-10-04 Ward Billy W Systems and methods for a helium ion pump
JP4074643B2 (ja) 2006-03-27 2008-04-09 株式会社アドバンテスト 線幅測定調整方法及び走査型電子顕微鏡
CN101173853B (zh) * 2006-11-01 2011-02-02 鸿富锦精密工业（深圳）有限公司 定位测量装置及方法
US7804068B2 (en) * 2006-11-15 2010-09-28 Alis Corporation Determining dopant information
US8263543B2 (en) 2009-04-17 2012-09-11 The Procter & Gamble Company Fabric care compositions comprising organosiloxane polymers
EP2584362A1 (de) * 2011-10-18 2013-04-24 FEI Company Abtastverfahren zum Abtasten einer Probe mit einer Sonde

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US4675528A (en) * 1985-06-28 1987-06-23 Control Data Corporation Method for measurement of spotsize and edgewidth in electron beam lithography
JP2823450B2 (ja) * 1992-11-19 1998-11-11 株式会社東芝 回路パターンの寸法測定方法
JP2802571B2 (ja) * 1993-03-23 1998-09-24 株式会社日立製作所 電子線測長装置
US5644512A (en) * 1996-03-04 1997-07-01 Advanced Surface Microscopy, Inc. High precision calibration and feature measurement system for a scanning probe microscope

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109540050A (zh) * 2017-09-22 2019-03-29 三星电子株式会社 关键尺寸测量系统和使用其测量关键尺寸的方法
CN109540050B (zh) * 2017-09-22 2022-05-24 三星电子株式会社 关键尺寸测量系统和使用其测量关键尺寸的方法

Also Published As

Publication number Publication date
DE69620371T2 (de) 2002-08-14
EP1102031A3 (de) 2001-11-28
JPH09184714A (ja) 1997-07-15
EP1102031A2 (de) 2001-05-23
EP0781976A2 (de) 1997-07-02
EP0781976A3 (de) 1998-06-10
EP0781976B1 (de) 2002-04-03
EP1102031B1 (de) 2009-05-20
DE69637937D1 (de) 2009-07-02
US5750990A (en) 1998-05-12

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Legal Events

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