DE69619207D1 - Polierverfahren - Google Patents

Polierverfahren

Info

Publication number
DE69619207D1
DE69619207D1 DE69619207T DE69619207T DE69619207D1 DE 69619207 D1 DE69619207 D1 DE 69619207D1 DE 69619207 T DE69619207 T DE 69619207T DE 69619207 T DE69619207 T DE 69619207T DE 69619207 D1 DE69619207 D1 DE 69619207D1
Authority
DE
Germany
Prior art keywords
polishing process
polishing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69619207T
Other languages
English (en)
Other versions
DE69619207T2 (de
Inventor
Naoto Miyashita
Masahiro Abe
Mariko Shimomura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE69619207D1 publication Critical patent/DE69619207D1/de
Publication of DE69619207T2 publication Critical patent/DE69619207T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/97—Specified etch stop material

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
DE69619207T 1995-11-13 1996-11-13 Polierverfahren Expired - Lifetime DE69619207T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP31705495 1995-11-13
JP11057696A JP3230986B2 (ja) 1995-11-13 1996-04-08 ポリッシング方法、半導体装置の製造方法及び半導体製造装置。

Publications (2)

Publication Number Publication Date
DE69619207D1 true DE69619207D1 (de) 2002-03-21
DE69619207T2 DE69619207T2 (de) 2002-09-19

Family

ID=26450182

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69619207T Expired - Lifetime DE69619207T2 (de) 1995-11-13 1996-11-13 Polierverfahren

Country Status (7)

Country Link
US (1) US6069083A (de)
EP (1) EP0777266B1 (de)
JP (1) JP3230986B2 (de)
KR (1) KR100348097B1 (de)
CN (1) CN1083154C (de)
DE (1) DE69619207T2 (de)
TW (1) TW428225B (de)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6097076A (en) * 1997-03-25 2000-08-01 Micron Technology, Inc. Self-aligned isolation trench
JPH10309660A (ja) 1997-05-07 1998-11-24 Tokuyama Corp 仕上げ研磨剤
FR2797603B1 (fr) * 1997-09-01 2004-01-16 United Microelectronics Corp Machine et procede de polissage chimio-mecanique et manchon de retenue utilise dans cette machine
US5948699A (en) * 1997-11-21 1999-09-07 Sibond, L.L.C. Wafer backing insert for free mount semiconductor polishing apparatus and process
ES2216490T3 (es) 1998-02-24 2004-10-16 Showa Denko Kabushiki Kaisha Composicion abrasiva para pulir un dispositivo semiconductor y procedimiento para producir un dispositivo semiconductor con la misma.
US6124207A (en) * 1998-08-31 2000-09-26 Micron Technology, Inc. Slurries for mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies, and methods and apparatuses for making and using such slurries
US6555466B1 (en) * 1999-03-29 2003-04-29 Speedfam Corporation Two-step chemical-mechanical planarization for damascene structures on semiconductor wafers
US6110832A (en) * 1999-04-28 2000-08-29 International Business Machines Corporation Method and apparatus for slurry polishing
US6375693B1 (en) 1999-05-07 2002-04-23 International Business Machines Corporation Chemical-mechanical planarization of barriers or liners for copper metallurgy
JP4513145B2 (ja) * 1999-09-07 2010-07-28 ソニー株式会社 半導体装置の製造方法および研磨方法
JP3645142B2 (ja) * 2000-01-18 2005-05-11 セイコーエプソン株式会社 半導体ウエハの処理方法ならびに半導体装置の製造方法
US6348395B1 (en) * 2000-06-07 2002-02-19 International Business Machines Corporation Diamond as a polish-stop layer for chemical-mechanical planarization in a damascene process flow
JP2002170792A (ja) 2000-11-29 2002-06-14 Mitsubishi Electric Corp 研磨液供給装置及び研磨液供給方法、研磨装置及び研磨方法、並びに、半導体装置の製造方法
CN1746255B (zh) * 2001-02-20 2010-11-10 日立化成工业株式会社 抛光剂及基片的抛光方法
US7078343B2 (en) * 2001-03-06 2006-07-18 Sumitomo Electric Industries, Ltd. Method of manufacturing compound semiconductor wafer
US6641632B1 (en) * 2002-11-18 2003-11-04 International Business Machines Corporation Polishing compositions and use thereof
US6910951B2 (en) * 2003-02-24 2005-06-28 Dow Global Technologies, Inc. Materials and methods for chemical-mechanical planarization
JP4954462B2 (ja) * 2004-10-19 2012-06-13 株式会社フジミインコーポレーテッド 窒化シリコン膜選択的研磨用組成物およびそれを用いる研磨方法
KR100687425B1 (ko) * 2005-12-14 2007-02-26 동부일렉트로닉스 주식회사 반도체 웨이퍼의 연마/세정장치 및 방법
JP2007234784A (ja) * 2006-02-28 2007-09-13 Fujimi Inc 研磨用組成物
JP2008117807A (ja) * 2006-10-31 2008-05-22 Fujimi Inc 研磨用組成物及び研磨方法
JP2008130988A (ja) * 2006-11-24 2008-06-05 Fujimi Inc 研磨用組成物及び研磨方法
WO2008105223A1 (ja) * 2007-02-27 2008-09-04 Hitachi Chemical Co., Ltd. シリコン膜用ｃｍｐスラリー
CN101570002B (zh) * 2008-05-04 2014-08-13 世界先进积体电路股份有限公司 研磨设备
CN103909464B (zh) * 2013-01-09 2017-10-31 华邦电子股份有限公司 化学机械研磨方法与自我对准方法
CN106531776B (zh) * 2015-09-11 2021-06-29 联华电子股份有限公司 半导体结构
KR101693278B1 (ko) * 2015-09-25 2017-01-05 유비머트리얼즈주식회사 슬러리 및 이를 이용한 기판 연마 방법
CN111745468A (zh) * 2020-06-04 2020-10-09 东莞市天域半导体科技有限公司 一种采用金刚石抛光膏的碳化硅晶片快速抛光方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4690693A (en) * 1985-12-05 1987-09-01 Gte Products Corporation High purity silicon nitride polishing compound
US4735679A (en) * 1987-03-30 1988-04-05 International Business Machines Corporation Method of improving silicon-on-insulator uniformity
JPH01187930A (ja) * 1988-01-22 1989-07-27 Nippon Telegr & Teleph Corp <Ntt> 研磨剤及び研磨方法
JPH02109332A (ja) * 1988-10-19 1990-04-23 Canon Inc 半導体基板の製造方法
US4954142A (en) * 1989-03-07 1990-09-04 International Business Machines Corporation Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor
US5084071A (en) * 1989-03-07 1992-01-28 International Business Machines Corporation Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor
US5094972A (en) * 1990-06-14 1992-03-10 National Semiconductor Corp. Means of planarizing integrated circuits with fully recessed isolation dielectric
JP2689706B2 (ja) * 1990-08-08 1997-12-10 上村工業株式会社 研磨方法
WO1993001129A1 (en) * 1991-07-03 1993-01-21 Novosibirsky Zavod Iskusstvennogo Volokna Carbon composition and method of obtaining it
US5376222A (en) * 1991-09-04 1994-12-27 Fujitsu Limited Polishing method for polycrystalline silicon
US5246884A (en) * 1991-10-30 1993-09-21 International Business Machines Corporation Cvd diamond or diamond-like carbon for chemical-mechanical polish etch stop
JP3060714B2 (ja) * 1992-04-15 2000-07-10 日本電気株式会社 半導体集積回路の製造方法
US5225034A (en) * 1992-06-04 1993-07-06 Micron Technology, Inc. Method of chemical mechanical polishing predominantly copper containing metal layers in semiconductor processing
WO1994002562A1 (en) * 1992-07-28 1994-02-03 Minnesota Mining And Manufacturing Company Abrasive grain, method of making same and abrasive products
US5213591A (en) * 1992-07-28 1993-05-25 Ahmet Celikkaya Abrasive grain, method of making same and abrasive products
US5607718A (en) * 1993-03-26 1997-03-04 Kabushiki Kaisha Toshiba Polishing method and polishing apparatus
US5603739A (en) * 1995-06-09 1997-02-18 Diamond Scientific, Inc. Abrasive suspension system
EP0786504A3 (de) * 1996-01-29 1998-05-20 Fujimi Incorporated Politurzusammensetzung
US5738800A (en) * 1996-09-27 1998-04-14 Rodel, Inc. Composition and method for polishing a composite of silica and silicon nitride
US5721172A (en) * 1996-12-02 1998-02-24 Taiwan Semiconductor Manufacturing Company, Ltd. Self-aligned polish stop layer hard masking method for forming planarized aperture fill layers
US5759917A (en) * 1996-12-30 1998-06-02 Cabot Corporation Composition for oxide CMP

Also Published As

Publication number Publication date
JP3230986B2 (ja) 2001-11-19
CN1156326A (zh) 1997-08-06
KR970030439A (ko) 1997-06-26
TW428225B (en) 2001-04-01
EP0777266A1 (de) 1997-06-04
JPH09199455A (ja) 1997-07-31
EP0777266B1 (de) 2002-02-13
DE69619207T2 (de) 2002-09-19
KR100348097B1 (ko) 2003-01-06
CN1083154C (zh) 2002-04-17
US6069083A (en) 2000-05-30

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition