DE69615273T2 - Polieren der Randbereiche von Wafers - Google Patents

Polieren der Randbereiche von Wafers

Info

Publication number
DE69615273T2
DE69615273T2 DE69615273T DE69615273T DE69615273T2 DE 69615273 T2 DE69615273 T2 DE 69615273T2 DE 69615273 T DE69615273 T DE 69615273T DE 69615273 T DE69615273 T DE 69615273T DE 69615273 T2 DE69615273 T2 DE 69615273T2
Authority
DE
Germany
Prior art keywords
wafers
polishing
edge areas
areas
edge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69615273T
Other languages
German (de)
English (en)
Other versions
DE69615273D1 (de
Inventor
Fumihiko Hasegawa
Yasuyoshi Kuroda
Shinichi Endou
Masayoshi Sekizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Naoetsu Electronics Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Naoetsu Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd, Naoetsu Electronics Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Application granted granted Critical
Publication of DE69615273D1 publication Critical patent/DE69615273D1/de
Publication of DE69615273T2 publication Critical patent/DE69615273T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B9/00Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
    • B24B9/02Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
    • B24B9/06Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
    • B24B9/065Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
DE69615273T 1995-05-29 1996-05-16 Polieren der Randbereiche von Wafers Expired - Fee Related DE69615273T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15381395 1995-05-29

Publications (2)

Publication Number Publication Date
DE69615273D1 DE69615273D1 (de) 2001-10-25
DE69615273T2 true DE69615273T2 (de) 2002-06-27

Family

ID=15570671

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69615273T Expired - Fee Related DE69615273T2 (de) 1995-05-29 1996-05-16 Polieren der Randbereiche von Wafers

Country Status (4)

Country Link
EP (1) EP0745456B1 (ko)
KR (1) KR960043006A (ko)
DE (1) DE69615273T2 (ko)
TW (1) TW303487B (ko)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5692950A (en) * 1996-08-08 1997-12-02 Minnesota Mining And Manufacturing Company Abrasive construction for semiconductor wafer modification
US8092707B2 (en) 1997-04-30 2012-01-10 3M Innovative Properties Company Compositions and methods for modifying a surface suited for semiconductor fabrication
JP2001007064A (ja) * 1999-06-17 2001-01-12 Sumitomo Metal Ind Ltd 半導体ウエーハの研削方法
JP4034096B2 (ja) * 2002-03-19 2008-01-16 日本碍子株式会社 半導体支持装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57184662A (en) * 1981-05-09 1982-11-13 Hitachi Ltd Chamfering method and device of wafer
JP3027882B2 (ja) * 1992-07-31 2000-04-04 信越半導体株式会社 ウエーハ面取部研磨装置
JP2798347B2 (ja) * 1993-07-08 1998-09-17 信越半導体株式会社 ウェーハのノッチ部研磨装置
JP2832138B2 (ja) * 1993-09-30 1998-12-02 信越半導体株式会社 ウェーハ外周部の研磨装置
JP2832142B2 (ja) * 1993-10-29 1998-12-02 信越半導体株式会社 ウェーハのノッチ部研磨装置
JPH07171749A (ja) * 1993-12-20 1995-07-11 Shin Etsu Handotai Co Ltd ウェーハ外周部の研磨装置
JPH08168946A (ja) * 1994-12-13 1996-07-02 Shin Etsu Handotai Co Ltd ウェーハ外周部の研磨装置

Also Published As

Publication number Publication date
EP0745456A1 (en) 1996-12-04
DE69615273D1 (de) 2001-10-25
KR960043006A (ko) 1996-12-21
TW303487B (ko) 1997-04-21
EP0745456B1 (en) 2001-09-19

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee