DE69609691D1 - Haltevorrichtung und Verfahren zur Laserherstellung mittels In-Situ-Spaltung von Halbleiterstäben - Google Patents

Haltevorrichtung und Verfahren zur Laserherstellung mittels In-Situ-Spaltung von Halbleiterstäben

Info

Publication number
DE69609691D1
DE69609691D1 DE69609691T DE69609691T DE69609691D1 DE 69609691 D1 DE69609691 D1 DE 69609691D1 DE 69609691 T DE69609691 T DE 69609691T DE 69609691 T DE69609691 T DE 69609691T DE 69609691 D1 DE69609691 D1 DE 69609691D1
Authority
DE
Germany
Prior art keywords
holding device
semiconductor rods
laser production
splitting
situ
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69609691T
Other languages
English (en)
Other versions
DE69609691T2 (de
Inventor
Utpal Kumar Chakrabarti
Jong Judith Francavilla De
Erdmann Frederick Schubert
James Dennis Wynn
George John Zydzik
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Corp filed Critical AT&T Corp
Application granted granted Critical
Publication of DE69609691D1 publication Critical patent/DE69609691D1/de
Publication of DE69609691T2 publication Critical patent/DE69609691T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0017—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing using moving tools
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0202—Cleaving
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T225/00—Severing by tearing or breaking
    • Y10T225/30—Breaking or tearing apparatus
    • Y10T225/35—Work-parting pullers [bursters]
    • Y10T225/357—Relatively movable clamps

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Dicing (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Sampling And Sample Adjustment (AREA)
DE69609691T 1995-10-30 1996-10-22 Haltevorrichtung und Verfahren zur Laserherstellung mittels In-Situ-Spaltung von Halbleiterstäben Expired - Fee Related DE69609691T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/549,897 US5719077A (en) 1995-10-30 1995-10-30 Fixture and method for laser fabrication by in-situ cleaving of semiconductor bars

Publications (2)

Publication Number Publication Date
DE69609691D1 true DE69609691D1 (de) 2000-09-14
DE69609691T2 DE69609691T2 (de) 2001-03-29

Family

ID=24194824

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69609691T Expired - Fee Related DE69609691T2 (de) 1995-10-30 1996-10-22 Haltevorrichtung und Verfahren zur Laserherstellung mittels In-Situ-Spaltung von Halbleiterstäben

Country Status (5)

Country Link
US (1) US5719077A (de)
EP (1) EP0771628B1 (de)
JP (1) JP3168252B2 (de)
DE (1) DE69609691T2 (de)
TW (1) TW296501B (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6045321A (en) * 1998-03-23 2000-04-04 Lucent Technologies, Inc. Method and apparatus for transporting laser bars
US6386533B1 (en) 1998-05-01 2002-05-14 Agere Systems Guardian Corp. Laser processing fixture
US5989932A (en) * 1998-07-28 1999-11-23 Lucent Technologies, Inc. Method and apparatus for retaining and releasing laser bars during a facet coating operation
US6102267A (en) * 1998-12-10 2000-08-15 Lucent Technologies, Inc. Method and apparatus for non-contact pulsating jet cleaving of a semiconductor material
US6274458B1 (en) 1999-07-07 2001-08-14 Agere Systems Optoelectronics Guardian Corp. Method of gas cleaving a semiconductor product
US6734453B2 (en) 2000-08-08 2004-05-11 Translucent Photonics, Inc. Devices with optical gain in silicon
US6451120B1 (en) * 2000-09-21 2002-09-17 Adc Telecommunications, Inc. Apparatus and method for batch processing semiconductor substrates in making semiconductor lasers
US7483212B2 (en) * 2006-10-11 2009-01-27 Rensselaer Polytechnic Institute Optical thin film, semiconductor light emitting device having the same and methods of fabricating the same

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5480070A (en) * 1977-12-08 1979-06-26 Toshiba Corp Cleaving device for single-crystal plate
JPH01152786A (ja) * 1987-12-10 1989-06-15 Nec Corp 半導体レーザウェハの劈開装置
EP0416190B1 (de) * 1989-09-07 1994-06-01 International Business Machines Corporation Verfahren zur Spiegelpassivierung bei Halbleiterlaserdioden
US5144634A (en) * 1989-09-07 1992-09-01 International Business Machines Corporation Method for mirror passivation of semiconductor laser diodes
EP0457998B1 (de) * 1990-05-25 1994-01-26 International Business Machines Corporation Verfahren und Vorrichtung zum Spalten von Halbleiterplatten und Bekleiden der gespalteten Facetten
JPH0474606A (ja) * 1990-07-18 1992-03-10 Mitsubishi Kasei Polytec Co 劈開加工方法
JPH04294589A (ja) * 1991-03-25 1992-10-19 Sumitomo Electric Ind Ltd 半導体レーザ型デバイスのへき開面コーティング方法
US5154333A (en) * 1991-10-30 1992-10-13 International Business Machines Corporation Jaw cleaving device
US5391036A (en) * 1993-03-15 1995-02-21 International Business Machines Corporation Magnetic transfer device

Also Published As

Publication number Publication date
TW296501B (en) 1997-01-21
JP3168252B2 (ja) 2001-05-21
EP0771628A2 (de) 1997-05-07
DE69609691T2 (de) 2001-03-29
EP0771628B1 (de) 2000-08-09
US5719077A (en) 1998-02-17
JPH09134894A (ja) 1997-05-20
EP0771628A3 (de) 1998-04-22

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Legal Events

Date Code Title Description
8339 Ceased/non-payment of the annual fee