DE69606969D1 - Verfahren und Vorrichtung zur Gasspülung eines zylindrischen Reaktors - Google Patents

Verfahren und Vorrichtung zur Gasspülung eines zylindrischen Reaktors

Info

Publication number
DE69606969D1
DE69606969D1 DE69606969T DE69606969T DE69606969D1 DE 69606969 D1 DE69606969 D1 DE 69606969D1 DE 69606969 T DE69606969 T DE 69606969T DE 69606969 T DE69606969 T DE 69606969T DE 69606969 D1 DE69606969 D1 DE 69606969D1
Authority
DE
Germany
Prior art keywords
gas purging
cylindrical reactor
reactor
cylindrical
purging
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69606969T
Other languages
English (en)
Other versions
DE69606969T2 (de
Inventor
Thomas M Hanley
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SunEdison Inc
Original Assignee
SunEdison Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SunEdison Inc filed Critical SunEdison Inc
Publication of DE69606969D1 publication Critical patent/DE69606969D1/de
Application granted granted Critical
Publication of DE69606969T2 publication Critical patent/DE69606969T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE69606969T 1996-01-04 1996-11-05 Verfahren und Vorrichtung zur Gasspülung eines zylindrischen Reaktors Expired - Fee Related DE69606969T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/582,650 US5746834A (en) 1996-01-04 1996-01-04 Method and apparatus for purging barrel reactors

Publications (2)

Publication Number Publication Date
DE69606969D1 true DE69606969D1 (de) 2000-04-13
DE69606969T2 DE69606969T2 (de) 2000-10-05

Family

ID=24329947

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69606969T Expired - Fee Related DE69606969T2 (de) 1996-01-04 1996-11-05 Verfahren und Vorrichtung zur Gasspülung eines zylindrischen Reaktors

Country Status (9)

Country Link
US (1) US5746834A (de)
EP (1) EP0783041B1 (de)
JP (1) JPH09199435A (de)
KR (1) KR970060366A (de)
CN (1) CN1158493A (de)
DE (1) DE69606969T2 (de)
MY (1) MY115858A (de)
SG (1) SG90016A1 (de)
TW (1) TW444261B (de)

Families Citing this family (27)

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US5932013A (en) * 1997-04-23 1999-08-03 Advanced Micro Devices, Inc. Apparatus for cleaning a semiconductor processing tool
US5846330A (en) * 1997-06-26 1998-12-08 Celestech, Inc. Gas injection disc assembly for CVD applications
US6475284B1 (en) 1999-09-20 2002-11-05 Moore Epitaxial, Inc. Gas dispersion head
US6799603B1 (en) 1999-09-20 2004-10-05 Moore Epitaxial, Inc. Gas flow controller system
US6328221B1 (en) 2000-02-09 2001-12-11 Moore Epitaxial, Inc. Method for controlling a gas injector in a semiconductor processing reactor
US6347749B1 (en) 2000-02-09 2002-02-19 Moore Epitaxial, Inc. Semiconductor processing reactor controllable gas jet assembly
US6738683B1 (en) * 2000-09-05 2004-05-18 Cxe Equipment Services, Llc Apparatus and method for cleaning a bell jar in a barrel epitaxial reactor
US6390394B1 (en) * 2000-12-04 2002-05-21 Industrial Technology Research Institute Nozzle and adjust module
US7378127B2 (en) * 2001-03-13 2008-05-27 Micron Technology, Inc. Chemical vapor deposition methods
US6758909B2 (en) * 2001-06-05 2004-07-06 Honeywell International Inc. Gas port sealing for CVD/CVI furnace hearth plates
KR20030002070A (ko) * 2001-06-30 2003-01-08 삼성전자 주식회사 원심력을 이용한 비점착 웨이퍼 건조방법 및 장치
US7229666B2 (en) * 2002-01-22 2007-06-12 Micron Technology, Inc. Chemical vapor deposition method
US6787185B2 (en) 2002-02-25 2004-09-07 Micron Technology, Inc. Deposition methods for improved delivery of metastable species
US7468104B2 (en) * 2002-05-17 2008-12-23 Micron Technology, Inc. Chemical vapor deposition apparatus and deposition method
US6887521B2 (en) * 2002-08-15 2005-05-03 Micron Technology, Inc. Gas delivery system for pulsed-type deposition processes used in the manufacturing of micro-devices
TW200508413A (en) * 2003-08-06 2005-03-01 Ulvac Inc Device and method for manufacturing thin films
US7384486B2 (en) * 2004-03-26 2008-06-10 Taiwan Semiconductor Manufacturing Co., Ltd. Chamber cleaning method
US7794667B2 (en) * 2005-10-19 2010-09-14 Moore Epitaxial, Inc. Gas ring and method of processing substrates
US8137463B2 (en) * 2007-12-19 2012-03-20 Applied Materials, Inc. Dual zone gas injection nozzle
US8298338B2 (en) * 2007-12-26 2012-10-30 Samsung Electronics Co., Ltd. Chemical vapor deposition apparatus
KR101792562B1 (ko) * 2009-11-25 2017-11-02 다이나텍 엔지니어링 에이에스 실리콘의 제조를 위한 반응기 및 방법
NO334776B1 (no) 2011-09-26 2014-05-26 Dynatec Engineering As Reaktor og fremgangsmåte for fremstilling av silisium ved kjemisk dampavsetning
JP2013149753A (ja) * 2012-01-18 2013-08-01 Shin Etsu Handotai Co Ltd 気相成長装置の清浄度評価方法及びシリコンエピタキシャルウェーハの製造方法
CN103240233A (zh) * 2012-02-01 2013-08-14 上海科秉电子科技有限公司 一种用于内遮蔽挡板的洗净方法
WO2014163742A1 (en) * 2013-03-12 2014-10-09 Applied Materials, Inc. Multi-zone gas injection assembly with azimuthal and radial distribution control
JP2015035460A (ja) * 2013-08-08 2015-02-19 信越半導体株式会社 エピタキシャルウェーハの製造方法
US12012653B2 (en) * 2021-03-23 2024-06-18 Applied Materials, Inc. Cleaning assemblies for substrate processing chambers

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US4147571A (en) * 1977-07-11 1979-04-03 Hewlett-Packard Company Method for vapor epitaxial deposition of III/V materials utilizing organometallic compounds and a halogen or halide in a hot wall system
DE3326043A1 (de) * 1983-07-20 1985-02-07 Licentia Gmbh Verfahren zur herstellung eines aerosolstromes und dessen verwendung
US4632060A (en) * 1984-03-12 1986-12-30 Toshiba Machine Co. Ltd Barrel type of epitaxial vapor phase growing apparatus
JPS61143579A (ja) * 1984-12-14 1986-07-01 Nachi Fujikoshi Corp プラズマイオン供給方法
JPS61156270A (ja) * 1984-12-28 1986-07-15 Ricoh Co Ltd 両面複写機における定着温度制御方法
US4728389A (en) * 1985-05-20 1988-03-01 Applied Materials, Inc. Particulate-free epitaxial process
JPS62136871A (ja) * 1985-12-11 1987-06-19 Canon Inc 光センサ−、その製造方法及びその製造装置
JPS62261119A (ja) * 1986-05-08 1987-11-13 Sony Corp 気相成長方法及びその装置
FR2599558B1 (fr) * 1986-05-27 1988-09-02 Labo Electronique Physique Procede de realisation d'un dispositif semi-conducteur, incluant le depot en phase vapeur de couches sur un substrat
US5000113A (en) * 1986-12-19 1991-03-19 Applied Materials, Inc. Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
US4854263B1 (en) * 1987-08-14 1997-06-17 Applied Materials Inc Inlet manifold and methods for increasing gas dissociation and for PECVD of dielectric films
US5160545A (en) * 1989-02-03 1992-11-03 Applied Materials, Inc. Method and apparatus for epitaxial deposition
JPH02222134A (ja) * 1989-02-23 1990-09-04 Nobuo Mikoshiba 薄膜形成装置
US4928626A (en) * 1989-05-19 1990-05-29 Applied Materials, Inc. Reactant gas injection for IC processing
US5227708A (en) * 1989-10-20 1993-07-13 Applied Materials, Inc. Two-axis magnetically coupled robot
JP2763222B2 (ja) * 1991-12-13 1998-06-11 三菱電機株式会社 化学気相成長方法ならびにそのための化学気相成長処理システムおよび化学気相成長装置
US5352636A (en) * 1992-01-16 1994-10-04 Applied Materials, Inc. In situ method for cleaning silicon surface and forming layer thereon in same chamber
US5298107A (en) * 1992-02-27 1994-03-29 Applied Materials, Inc. Processing method for growing thick films
JPH06291040A (ja) * 1992-03-03 1994-10-18 Rintetsuku:Kk 液体気化供給方法と液体気化供給器
US5316794A (en) * 1992-12-11 1994-05-31 Applied Materials, Inc. Method for servicing vacuum chamber using non-reactive gas-filled maintenance enclosure
US5345999A (en) * 1993-03-17 1994-09-13 Applied Materials, Inc. Method and apparatus for cooling semiconductor wafers
US5332443A (en) * 1993-06-09 1994-07-26 Applied Materials, Inc. Lift fingers for substrate processing apparatus

Also Published As

Publication number Publication date
JPH09199435A (ja) 1997-07-31
EP0783041B1 (de) 2000-03-08
CN1158493A (zh) 1997-09-03
SG90016A1 (en) 2002-07-23
US5746834A (en) 1998-05-05
DE69606969T2 (de) 2000-10-05
EP0783041A1 (de) 1997-07-09
KR970060366A (ko) 1997-08-12
MY115858A (en) 2003-09-30
TW444261B (en) 2001-07-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee