DE69606969D1 - Verfahren und Vorrichtung zur Gasspülung eines zylindrischen Reaktors - Google Patents
Verfahren und Vorrichtung zur Gasspülung eines zylindrischen ReaktorsInfo
- Publication number
- DE69606969D1 DE69606969D1 DE69606969T DE69606969T DE69606969D1 DE 69606969 D1 DE69606969 D1 DE 69606969D1 DE 69606969 T DE69606969 T DE 69606969T DE 69606969 T DE69606969 T DE 69606969T DE 69606969 D1 DE69606969 D1 DE 69606969D1
- Authority
- DE
- Germany
- Prior art keywords
- gas purging
- cylindrical reactor
- reactor
- cylindrical
- purging
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title 1
- 238000010926 purge Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/582,650 US5746834A (en) | 1996-01-04 | 1996-01-04 | Method and apparatus for purging barrel reactors |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69606969D1 true DE69606969D1 (de) | 2000-04-13 |
DE69606969T2 DE69606969T2 (de) | 2000-10-05 |
Family
ID=24329947
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69606969T Expired - Fee Related DE69606969T2 (de) | 1996-01-04 | 1996-11-05 | Verfahren und Vorrichtung zur Gasspülung eines zylindrischen Reaktors |
Country Status (9)
Country | Link |
---|---|
US (1) | US5746834A (de) |
EP (1) | EP0783041B1 (de) |
JP (1) | JPH09199435A (de) |
KR (1) | KR970060366A (de) |
CN (1) | CN1158493A (de) |
DE (1) | DE69606969T2 (de) |
MY (1) | MY115858A (de) |
SG (1) | SG90016A1 (de) |
TW (1) | TW444261B (de) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5932013A (en) * | 1997-04-23 | 1999-08-03 | Advanced Micro Devices, Inc. | Apparatus for cleaning a semiconductor processing tool |
US5846330A (en) * | 1997-06-26 | 1998-12-08 | Celestech, Inc. | Gas injection disc assembly for CVD applications |
US6475284B1 (en) | 1999-09-20 | 2002-11-05 | Moore Epitaxial, Inc. | Gas dispersion head |
US6799603B1 (en) | 1999-09-20 | 2004-10-05 | Moore Epitaxial, Inc. | Gas flow controller system |
US6328221B1 (en) | 2000-02-09 | 2001-12-11 | Moore Epitaxial, Inc. | Method for controlling a gas injector in a semiconductor processing reactor |
US6347749B1 (en) | 2000-02-09 | 2002-02-19 | Moore Epitaxial, Inc. | Semiconductor processing reactor controllable gas jet assembly |
US6738683B1 (en) * | 2000-09-05 | 2004-05-18 | Cxe Equipment Services, Llc | Apparatus and method for cleaning a bell jar in a barrel epitaxial reactor |
US6390394B1 (en) * | 2000-12-04 | 2002-05-21 | Industrial Technology Research Institute | Nozzle and adjust module |
US7378127B2 (en) * | 2001-03-13 | 2008-05-27 | Micron Technology, Inc. | Chemical vapor deposition methods |
US6758909B2 (en) * | 2001-06-05 | 2004-07-06 | Honeywell International Inc. | Gas port sealing for CVD/CVI furnace hearth plates |
KR20030002070A (ko) * | 2001-06-30 | 2003-01-08 | 삼성전자 주식회사 | 원심력을 이용한 비점착 웨이퍼 건조방법 및 장치 |
US7229666B2 (en) * | 2002-01-22 | 2007-06-12 | Micron Technology, Inc. | Chemical vapor deposition method |
US6787185B2 (en) | 2002-02-25 | 2004-09-07 | Micron Technology, Inc. | Deposition methods for improved delivery of metastable species |
US7468104B2 (en) * | 2002-05-17 | 2008-12-23 | Micron Technology, Inc. | Chemical vapor deposition apparatus and deposition method |
US6887521B2 (en) * | 2002-08-15 | 2005-05-03 | Micron Technology, Inc. | Gas delivery system for pulsed-type deposition processes used in the manufacturing of micro-devices |
TW200508413A (en) * | 2003-08-06 | 2005-03-01 | Ulvac Inc | Device and method for manufacturing thin films |
US7384486B2 (en) * | 2004-03-26 | 2008-06-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Chamber cleaning method |
US7794667B2 (en) * | 2005-10-19 | 2010-09-14 | Moore Epitaxial, Inc. | Gas ring and method of processing substrates |
US8137463B2 (en) * | 2007-12-19 | 2012-03-20 | Applied Materials, Inc. | Dual zone gas injection nozzle |
US8298338B2 (en) * | 2007-12-26 | 2012-10-30 | Samsung Electronics Co., Ltd. | Chemical vapor deposition apparatus |
KR101792562B1 (ko) * | 2009-11-25 | 2017-11-02 | 다이나텍 엔지니어링 에이에스 | 실리콘의 제조를 위한 반응기 및 방법 |
NO334776B1 (no) | 2011-09-26 | 2014-05-26 | Dynatec Engineering As | Reaktor og fremgangsmåte for fremstilling av silisium ved kjemisk dampavsetning |
JP2013149753A (ja) * | 2012-01-18 | 2013-08-01 | Shin Etsu Handotai Co Ltd | 気相成長装置の清浄度評価方法及びシリコンエピタキシャルウェーハの製造方法 |
CN103240233A (zh) * | 2012-02-01 | 2013-08-14 | 上海科秉电子科技有限公司 | 一种用于内遮蔽挡板的洗净方法 |
WO2014163742A1 (en) * | 2013-03-12 | 2014-10-09 | Applied Materials, Inc. | Multi-zone gas injection assembly with azimuthal and radial distribution control |
JP2015035460A (ja) * | 2013-08-08 | 2015-02-19 | 信越半導体株式会社 | エピタキシャルウェーハの製造方法 |
US12012653B2 (en) * | 2021-03-23 | 2024-06-18 | Applied Materials, Inc. | Cleaning assemblies for substrate processing chambers |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4147571A (en) * | 1977-07-11 | 1979-04-03 | Hewlett-Packard Company | Method for vapor epitaxial deposition of III/V materials utilizing organometallic compounds and a halogen or halide in a hot wall system |
DE3326043A1 (de) * | 1983-07-20 | 1985-02-07 | Licentia Gmbh | Verfahren zur herstellung eines aerosolstromes und dessen verwendung |
US4632060A (en) * | 1984-03-12 | 1986-12-30 | Toshiba Machine Co. Ltd | Barrel type of epitaxial vapor phase growing apparatus |
JPS61143579A (ja) * | 1984-12-14 | 1986-07-01 | Nachi Fujikoshi Corp | プラズマイオン供給方法 |
JPS61156270A (ja) * | 1984-12-28 | 1986-07-15 | Ricoh Co Ltd | 両面複写機における定着温度制御方法 |
US4728389A (en) * | 1985-05-20 | 1988-03-01 | Applied Materials, Inc. | Particulate-free epitaxial process |
JPS62136871A (ja) * | 1985-12-11 | 1987-06-19 | Canon Inc | 光センサ−、その製造方法及びその製造装置 |
JPS62261119A (ja) * | 1986-05-08 | 1987-11-13 | Sony Corp | 気相成長方法及びその装置 |
FR2599558B1 (fr) * | 1986-05-27 | 1988-09-02 | Labo Electronique Physique | Procede de realisation d'un dispositif semi-conducteur, incluant le depot en phase vapeur de couches sur un substrat |
US5000113A (en) * | 1986-12-19 | 1991-03-19 | Applied Materials, Inc. | Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process |
US4854263B1 (en) * | 1987-08-14 | 1997-06-17 | Applied Materials Inc | Inlet manifold and methods for increasing gas dissociation and for PECVD of dielectric films |
US5160545A (en) * | 1989-02-03 | 1992-11-03 | Applied Materials, Inc. | Method and apparatus for epitaxial deposition |
JPH02222134A (ja) * | 1989-02-23 | 1990-09-04 | Nobuo Mikoshiba | 薄膜形成装置 |
US4928626A (en) * | 1989-05-19 | 1990-05-29 | Applied Materials, Inc. | Reactant gas injection for IC processing |
US5227708A (en) * | 1989-10-20 | 1993-07-13 | Applied Materials, Inc. | Two-axis magnetically coupled robot |
JP2763222B2 (ja) * | 1991-12-13 | 1998-06-11 | 三菱電機株式会社 | 化学気相成長方法ならびにそのための化学気相成長処理システムおよび化学気相成長装置 |
US5352636A (en) * | 1992-01-16 | 1994-10-04 | Applied Materials, Inc. | In situ method for cleaning silicon surface and forming layer thereon in same chamber |
US5298107A (en) * | 1992-02-27 | 1994-03-29 | Applied Materials, Inc. | Processing method for growing thick films |
JPH06291040A (ja) * | 1992-03-03 | 1994-10-18 | Rintetsuku:Kk | 液体気化供給方法と液体気化供給器 |
US5316794A (en) * | 1992-12-11 | 1994-05-31 | Applied Materials, Inc. | Method for servicing vacuum chamber using non-reactive gas-filled maintenance enclosure |
US5345999A (en) * | 1993-03-17 | 1994-09-13 | Applied Materials, Inc. | Method and apparatus for cooling semiconductor wafers |
US5332443A (en) * | 1993-06-09 | 1994-07-26 | Applied Materials, Inc. | Lift fingers for substrate processing apparatus |
-
1996
- 1996-01-04 US US08/582,650 patent/US5746834A/en not_active Expired - Fee Related
- 1996-10-17 TW TW085112674A patent/TW444261B/zh active
- 1996-10-18 MY MYPI96004340A patent/MY115858A/en unknown
- 1996-11-05 DE DE69606969T patent/DE69606969T2/de not_active Expired - Fee Related
- 1996-11-05 EP EP96308007A patent/EP0783041B1/de not_active Expired - Lifetime
- 1996-11-29 KR KR1019960059990A patent/KR970060366A/ko active IP Right Grant
- 1996-12-10 CN CN96119772A patent/CN1158493A/zh active Pending
- 1996-12-26 JP JP8347343A patent/JPH09199435A/ja not_active Withdrawn
-
1997
- 1997-01-03 SG SG9700276A patent/SG90016A1/en unknown
Also Published As
Publication number | Publication date |
---|---|
JPH09199435A (ja) | 1997-07-31 |
EP0783041B1 (de) | 2000-03-08 |
CN1158493A (zh) | 1997-09-03 |
SG90016A1 (en) | 2002-07-23 |
US5746834A (en) | 1998-05-05 |
DE69606969T2 (de) | 2000-10-05 |
EP0783041A1 (de) | 1997-07-09 |
KR970060366A (ko) | 1997-08-12 |
MY115858A (en) | 2003-09-30 |
TW444261B (en) | 2001-07-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |