DE69605615T2 - Stormbegrenzungsanordnung und Verfahren zur Herstellung - Google Patents

Stormbegrenzungsanordnung und Verfahren zur Herstellung

Info

Publication number
DE69605615T2
DE69605615T2 DE69605615T DE69605615T DE69605615T2 DE 69605615 T2 DE69605615 T2 DE 69605615T2 DE 69605615 T DE69605615 T DE 69605615T DE 69605615 T DE69605615 T DE 69605615T DE 69605615 T2 DE69605615 T2 DE 69605615T2
Authority
DE
Germany
Prior art keywords
storm
manufacture
limitation arrangement
limitation
arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69605615T
Other languages
English (en)
Other versions
DE69605615D1 (de
Inventor
Philippe Godignon
Palma Jean-Francois De
Rene Deshayes
Juan Fernandez
Jose Millan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centro Nacional de Microelectronica CSIC
Ferraz SA
Original Assignee
Centro Nacional de Microelectronica CSIC
Ferraz SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centro Nacional de Microelectronica CSIC, Ferraz SA filed Critical Centro Nacional de Microelectronica CSIC
Application granted granted Critical
Publication of DE69605615D1 publication Critical patent/DE69605615D1/de
Publication of DE69605615T2 publication Critical patent/DE69605615T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/87—Thyristor diodes, e.g. Shockley diodes, break-over diodes
DE69605615T 1995-07-28 1996-07-26 Stormbegrenzungsanordnung und Verfahren zur Herstellung Expired - Fee Related DE69605615T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9509442A FR2737343B1 (fr) 1995-07-28 1995-07-28 Composant limiteur de courant et procede de realisation

Publications (2)

Publication Number Publication Date
DE69605615D1 DE69605615D1 (de) 2000-01-20
DE69605615T2 true DE69605615T2 (de) 2000-05-31

Family

ID=9481668

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69605615T Expired - Fee Related DE69605615T2 (de) 1995-07-28 1996-07-26 Stormbegrenzungsanordnung und Verfahren zur Herstellung

Country Status (7)

Country Link
US (1) US5696390A (de)
EP (1) EP0756331B1 (de)
DE (1) DE69605615T2 (de)
DK (1) DK0756331T3 (de)
ES (1) ES2140049T3 (de)
FR (1) FR2737343B1 (de)
PT (1) PT756331E (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2789519B1 (fr) * 1999-02-05 2003-03-28 Commissariat Energie Atomique Transistor mos a tension de seuil dynamique equipe d'un limiteur de courant, et procede de realisation d'un tel transistor
US6674129B1 (en) * 1999-12-17 2004-01-06 Koninklijke Phillips Electronics N.V. ESD diode structure
US6501630B1 (en) 1999-12-17 2002-12-31 Koninklijke Philips Electronics N.V. Bi-directional ESD diode structure

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL239104A (de) * 1958-05-26 1900-01-01 Western Electric Co
NL251532A (de) * 1959-06-17
US3175934A (en) * 1960-01-19 1965-03-30 Hitachi Ltd Semiconductor switching element and process for producing the same
US3093755A (en) * 1960-07-07 1963-06-11 Mallory & Co Inc P R Semiconductor diode exhibiting differential negative resistance
NL266849A (de) * 1960-07-19
DE1614440A1 (de) * 1967-03-08 1970-07-16 Siemens Ag Thyristor
FR2458905A1 (fr) * 1979-06-06 1981-01-02 Silicium Semiconducteur Ssc Diode de shockley et son procede de fabrication
JPH0638508B2 (ja) * 1988-05-12 1994-05-18 工業技術院長 半導体サージ保護素子
JP2751103B2 (ja) * 1988-06-21 1998-05-18 シーメンス、アクチエンゲゼルシヤフト ダイオード
DE3931589A1 (de) * 1989-09-22 1991-04-04 Bosch Gmbh Robert Halbleiterschaltelement
US5483086A (en) * 1993-04-20 1996-01-09 Shindengen Electric Manufacturing Co., Ltd. Four layer semiconductor surge protector having plural short-circuited junctions

Also Published As

Publication number Publication date
US5696390A (en) 1997-12-09
EP0756331A1 (de) 1997-01-29
FR2737343B1 (fr) 1997-10-24
DK0756331T3 (da) 2000-05-01
ES2140049T3 (es) 2000-02-16
FR2737343A1 (fr) 1997-01-31
PT756331E (pt) 2000-06-30
EP0756331B1 (de) 1999-12-15
DE69605615D1 (de) 2000-01-20

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee