DK0756331T3 - Strømbegrænserelement og fremgangsmåde til fremstilling heraf - Google Patents

Strømbegrænserelement og fremgangsmåde til fremstilling heraf

Info

Publication number
DK0756331T3
DK0756331T3 DK96420258T DK96420258T DK0756331T3 DK 0756331 T3 DK0756331 T3 DK 0756331T3 DK 96420258 T DK96420258 T DK 96420258T DK 96420258 T DK96420258 T DK 96420258T DK 0756331 T3 DK0756331 T3 DK 0756331T3
Authority
DK
Denmark
Prior art keywords
manufacture
current limiting
limiting element
current
limiting
Prior art date
Application number
DK96420258T
Other languages
English (en)
Inventor
Philippe Godignon
Juan Fernandez
Palma Jean-Francois De
Rene Deshayes
Jose Millan
Original Assignee
Ferraz Sa
Nacional De Microelectronica C
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ferraz Sa, Nacional De Microelectronica C filed Critical Ferraz Sa
Application granted granted Critical
Publication of DK0756331T3 publication Critical patent/DK0756331T3/da

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/87—Thyristor diodes, e.g. Shockley diodes, break-over diodes

Landscapes

  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Thyristors (AREA)
  • Tone Control, Compression And Expansion, Limiting Amplitude (AREA)
  • Emergency Protection Circuit Devices (AREA)
  • Bipolar Transistors (AREA)
DK96420258T 1995-07-28 1996-07-26 Strømbegrænserelement og fremgangsmåde til fremstilling heraf DK0756331T3 (da)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9509442A FR2737343B1 (fr) 1995-07-28 1995-07-28 Composant limiteur de courant et procede de realisation

Publications (1)

Publication Number Publication Date
DK0756331T3 true DK0756331T3 (da) 2000-05-01

Family

ID=9481668

Family Applications (1)

Application Number Title Priority Date Filing Date
DK96420258T DK0756331T3 (da) 1995-07-28 1996-07-26 Strømbegrænserelement og fremgangsmåde til fremstilling heraf

Country Status (7)

Country Link
US (1) US5696390A (da)
EP (1) EP0756331B1 (da)
DE (1) DE69605615T2 (da)
DK (1) DK0756331T3 (da)
ES (1) ES2140049T3 (da)
FR (1) FR2737343B1 (da)
PT (1) PT756331E (da)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2789519B1 (fr) * 1999-02-05 2003-03-28 Commissariat Energie Atomique Transistor mos a tension de seuil dynamique equipe d'un limiteur de courant, et procede de realisation d'un tel transistor
US6501630B1 (en) 1999-12-17 2002-12-31 Koninklijke Philips Electronics N.V. Bi-directional ESD diode structure
US6674129B1 (en) * 1999-12-17 2004-01-06 Koninklijke Phillips Electronics N.V. ESD diode structure

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL239104A (da) * 1958-05-26 1900-01-01 Western Electric Co
NL251532A (da) * 1959-06-17
US3175934A (en) * 1960-01-19 1965-03-30 Hitachi Ltd Semiconductor switching element and process for producing the same
US3093755A (en) * 1960-07-07 1963-06-11 Mallory & Co Inc P R Semiconductor diode exhibiting differential negative resistance
NL131695C (da) * 1960-07-19
DE1614440A1 (de) * 1967-03-08 1970-07-16 Siemens Ag Thyristor
FR2458905A1 (fr) * 1979-06-06 1981-01-02 Silicium Semiconducteur Ssc Diode de shockley et son procede de fabrication
JPH0638508B2 (ja) * 1988-05-12 1994-05-18 工業技術院長 半導体サージ保護素子
EP0347778B1 (de) * 1988-06-21 1995-05-31 Siemens Aktiengesellschaft Diode mit verbessertem Abschaltverhalten
DE3931589A1 (de) * 1989-09-22 1991-04-04 Bosch Gmbh Robert Halbleiterschaltelement
US5483086A (en) * 1993-04-20 1996-01-09 Shindengen Electric Manufacturing Co., Ltd. Four layer semiconductor surge protector having plural short-circuited junctions

Also Published As

Publication number Publication date
FR2737343B1 (fr) 1997-10-24
EP0756331B1 (fr) 1999-12-15
DE69605615D1 (de) 2000-01-20
FR2737343A1 (fr) 1997-01-31
ES2140049T3 (es) 2000-02-16
DE69605615T2 (de) 2000-05-31
US5696390A (en) 1997-12-09
PT756331E (pt) 2000-06-30
EP0756331A1 (fr) 1997-01-29

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