DE69532174D1 - Dünnfilm-Sensorelement sowie Verfahren zu seiner Herstellung - Google Patents

Dünnfilm-Sensorelement sowie Verfahren zu seiner Herstellung

Info

Publication number
DE69532174D1
DE69532174D1 DE69532174T DE69532174T DE69532174D1 DE 69532174 D1 DE69532174 D1 DE 69532174D1 DE 69532174 T DE69532174 T DE 69532174T DE 69532174 T DE69532174 T DE 69532174T DE 69532174 D1 DE69532174 D1 DE 69532174D1
Authority
DE
Germany
Prior art keywords
production
thin film
sensor element
film sensor
thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69532174T
Other languages
English (en)
Other versions
DE69532174T2 (de
Inventor
Hideo Torii
Takeshi Kamada
Shigenori Hayashi
Ryoichi Takayama
Takashi Hirao
Masumi Hattori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Application granted granted Critical
Publication of DE69532174D1 publication Critical patent/DE69532174D1/de
Publication of DE69532174T2 publication Critical patent/DE69532174T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/09—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by piezoelectric pick-up
    • G01P15/0922—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by piezoelectric pick-up of the bending or flexing mode type
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
    • H10N30/073—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies by fusion of metals or by adhesives
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
    • H10N30/706—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
    • H10N30/708—Intermediate layers, e.g. barrier, adhesion or growth control buffer layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/87—Electrodes or interconnections, e.g. leads or terminals
    • H10N30/877—Conductive materials
    • H10N30/878—Conductive materials the principal material being non-metallic, e.g. oxide or carbon based
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/42—Piezoelectric device making
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/4981—Utilizing transitory attached element or associated separate material

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Micromachines (AREA)
DE69532174T 1994-02-07 1995-01-23 Dünnfilm-Sensorelement sowie Verfahren zu seiner Herstellung Expired - Fee Related DE69532174T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP1341394 1994-02-07
JP1341394 1994-02-07
JP13698194 1994-06-20
JP13698194 1994-06-20

Publications (2)

Publication Number Publication Date
DE69532174D1 true DE69532174D1 (de) 2004-01-08
DE69532174T2 DE69532174T2 (de) 2004-04-15

Family

ID=26349208

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69532174T Expired - Fee Related DE69532174T2 (de) 1994-02-07 1995-01-23 Dünnfilm-Sensorelement sowie Verfahren zu seiner Herstellung

Country Status (5)

Country Link
US (2) US5612536A (de)
EP (1) EP0667532B1 (de)
KR (1) KR100262137B1 (de)
CN (1) CN1088918C (de)
DE (1) DE69532174T2 (de)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000076295A (ko) * 1998-01-16 2000-12-26 다니구찌 이찌로오, 기타오카 다카시 박막 압전 소자
US6351057B1 (en) * 1999-01-25 2002-02-26 Samsung Electro-Mechanics Co., Ltd Microactuator and method for fabricating the same
JP3438709B2 (ja) * 2000-08-31 2003-08-18 セイコーエプソン株式会社 圧電デバイス及びその製造方法と圧電発振器の製造方法
KR100398363B1 (ko) * 2000-12-05 2003-09-19 삼성전기주식회사 Ｆｂａｒ 소자 및 그 제조방법
JP3684233B2 (ja) * 2002-05-14 2005-08-17 キヤノン株式会社 指紋入力装置及びその製造方法
US7083270B2 (en) * 2002-06-20 2006-08-01 Matsushita Electric Industrial Co., Ltd. Piezoelectric element, ink jet head, angular velocity sensor, method for manufacturing the same, and ink jet recording apparatus
JP3966237B2 (ja) * 2003-06-19 2007-08-29 セイコーエプソン株式会社 圧電デバイス、圧電デバイスを搭載した電子機器
KR101238360B1 (ko) * 2006-08-16 2013-03-04 삼성전자주식회사 공진기 및 그 제조 방법
CA2588165C (fr) * 2007-05-07 2011-05-31 Serge Mai Systeme quasi-autonome de stockage d'energie et de motorisation electrique
US8912036B2 (en) 2007-08-24 2014-12-16 The Regents Of The University Of Michigan Growth of ordered crystalline organic films
KR100924533B1 (ko) 2007-09-19 2009-11-02 한국전기연구원 복합 생체신호 센서
JP4930569B2 (ja) * 2009-10-14 2012-05-16 株式会社村田製作所 磁気ヘッド駆動用圧電セラミックアクチュエータ
CN102107845B (zh) * 2009-12-25 2013-11-13 中国科学院金属研究所 一种微米传感元及其制备方法和应用
US8866367B2 (en) 2011-10-17 2014-10-21 The United States Of America As Represented By The Secretary Of The Army Thermally oxidized seed layers for the production of {001} textured electrodes and PZT devices and method of making
WO2014021701A1 (es) * 2012-07-31 2014-02-06 Universidad Nacional Autónoma de México Dispositivo de sensado de perturbaciones pulsadas de tipo elastomecánicas
JP6264525B2 (ja) * 2013-03-25 2018-01-24 セイコーエプソン株式会社 赤外線センサー、熱検知素子及びそれを用いた熱検知方法
DE102013209541A1 (de) * 2013-05-23 2014-11-27 Siemens Aktiengesellschaft Sensorelementanordnung und Verfahren zum Herstellen einer Sensorelementanordnung
US10396755B2 (en) * 2016-02-17 2019-08-27 Samsung Electro-Mechanics Co., Ltd. Resonator having frame and method of manufacturing the same
WO2018130436A1 (en) * 2017-01-11 2018-07-19 Koninklijke Philips N.V. Integrated temperature sensor on lead selenide plate detector assembly
US10697090B2 (en) * 2017-06-23 2020-06-30 Panasonic Intellectual Property Management Co., Ltd. Thin-film structural body and method for fabricating thereof
CN109371376B (zh) * 2018-12-04 2021-04-20 北京科技大学 一种单一晶体取向的NiO薄膜的可控制备方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE144482C (de) *
US4066527A (en) * 1975-07-18 1978-01-03 Futaba Denshi Kogyo K. K. Method of producing semiconductor device
US4339764A (en) * 1977-05-27 1982-07-13 The United States Of America As Represented By The Secretary Of The Navy PbSx Se1-x semiconductor
US4480209A (en) * 1981-10-09 1984-10-30 Clarion Co., Ltd. Surface acoustic wave device having a specified crystalline orientation
US4532424A (en) * 1983-04-25 1985-07-30 Rockwell International Corporation Pyroelectric thermal detector array
JPS60189307A (ja) * 1984-03-09 1985-09-26 Toshiba Corp 圧電薄膜共振器およびその製造方法
JPH0685450B2 (ja) * 1986-01-13 1994-10-26 松下電器産業株式会社 強誘電体薄膜素子
JPH0672800B2 (ja) * 1986-03-12 1994-09-14 松下電器産業株式会社 焦電型赤外線センサ
FR2656689A1 (fr) * 1989-12-29 1991-07-05 Philips Electronique Lab Element detecteur pyroelectrique et dispositifs pour la detection de phenomenes thermiques.
US5210455A (en) * 1990-07-26 1993-05-11 Ngk Insulators, Ltd. Piezoelectric/electrostrictive actuator having ceramic substrate having recess defining thin-walled portion
JP2584124B2 (ja) * 1990-11-01 1997-02-19 松下電器産業株式会社 焦電型赤外線検出器およびその製造方法
US5209119A (en) * 1990-12-12 1993-05-11 Regents Of The University Of Minnesota Microdevice for sensing a force
US5286975A (en) * 1991-05-29 1994-02-15 Matsushita Electric Industrial Co., Ltd. Pyro-electric type infrared-ray sensor
JPH05283756A (ja) * 1992-03-31 1993-10-29 Murata Mfg Co Ltd 強誘電体薄膜素子
US5413667A (en) * 1992-11-04 1995-05-09 Matsushita Electric Industrial Co., Ltd. Pyroelectric infrared detector fabricating method
US5387459A (en) * 1992-12-17 1995-02-07 Eastman Kodak Company Multilayer structure having an epitaxial metal electrode
KR950001303A (ko) * 1993-06-22 1995-01-03 이헌조 박막 적외선 센서구조 및 그 제조 방법

Also Published As

Publication number Publication date
US6105225A (en) 2000-08-22
EP0667532A3 (de) 1998-07-22
KR100262137B1 (ko) 2000-07-15
EP0667532A2 (de) 1995-08-16
CN1088918C (zh) 2002-08-07
EP0667532B1 (de) 2003-11-26
DE69532174T2 (de) 2004-04-15
CN1121999A (zh) 1996-05-08
KR950026041A (ko) 1995-09-18
US5612536A (en) 1997-03-18

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee