DE69518682T2 - Kronenetherhaltige Entschichtungsmittel - Google Patents
Kronenetherhaltige EntschichtungsmittelInfo
- Publication number
- DE69518682T2 DE69518682T2 DE69518682T DE69518682T DE69518682T2 DE 69518682 T2 DE69518682 T2 DE 69518682T2 DE 69518682 T DE69518682 T DE 69518682T DE 69518682 T DE69518682 T DE 69518682T DE 69518682 T2 DE69518682 T2 DE 69518682T2
- Authority
- DE
- Germany
- Prior art keywords
- group
- ligand
- ions
- organic solvent
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 150000003983 crown ethers Chemical class 0.000 title claims description 5
- 239000003795 chemical substances by application Substances 0.000 title 1
- 239000003960 organic solvent Substances 0.000 claims description 14
- 239000003446 ligand Substances 0.000 claims description 12
- 150000002500 ions Chemical class 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 8
- 229920002120 photoresistant polymer Polymers 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 229920000858 Cyclodextrin Polymers 0.000 claims description 3
- 229940097362 cyclodextrins Drugs 0.000 claims description 3
- 150000002739 metals Chemical class 0.000 claims 2
- 238000005530 etching Methods 0.000 claims 1
- 238000011109 contamination Methods 0.000 description 10
- 239000002904 solvent Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000004033 plastic Substances 0.000 description 4
- 239000013110 organic ligand Substances 0.000 description 3
- XEZNGIUYQVAUSS-UHFFFAOYSA-N 18-crown-6 Chemical compound C1COCCOCCOCCOCCOCCO1 XEZNGIUYQVAUSS-UHFFFAOYSA-N 0.000 description 2
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- -1 polypropylene Polymers 0.000 description 2
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- RDSFGYBJMBTKMN-UHFFFAOYSA-N 1,4,7,10,13-pentaoxacyclooctadecane Chemical compound C1CCOCCOCCOCCOCCOCC1 RDSFGYBJMBTKMN-UHFFFAOYSA-N 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910001413 alkali metal ion Inorganic materials 0.000 description 1
- 229910001420 alkaline earth metal ion Inorganic materials 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000001212 derivatisation Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 239000012442 inert solvent Substances 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- WFKAJVHLWXSISD-UHFFFAOYSA-N isobutyramide Chemical compound CC(C)C(N)=O WFKAJVHLWXSISD-UHFFFAOYSA-N 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 150000003141 primary amines Chemical class 0.000 description 1
- 150000003335 secondary amines Chemical class 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Detergent Compositions (AREA)
- Photoreceptors In Electrophotography (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/210,193 US5417802A (en) | 1994-03-18 | 1994-03-18 | Integrated circuit manufacturing |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69518682D1 DE69518682D1 (de) | 2000-10-12 |
| DE69518682T2 true DE69518682T2 (de) | 2001-02-01 |
Family
ID=22781941
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69518682T Expired - Fee Related DE69518682T2 (de) | 1994-03-18 | 1995-03-16 | Kronenetherhaltige Entschichtungsmittel |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US5417802A (enExample) |
| EP (1) | EP0674231B1 (enExample) |
| JP (1) | JPH07273074A (enExample) |
| KR (1) | KR950034566A (enExample) |
| DE (1) | DE69518682T2 (enExample) |
| ES (1) | ES2150528T3 (enExample) |
| SG (1) | SG24106A1 (enExample) |
| TW (1) | TW295694B (enExample) |
Families Citing this family (51)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5665688A (en) * | 1996-01-23 | 1997-09-09 | Olin Microelectronics Chemicals, Inc. | Photoresist stripping composition |
| US5648324A (en) * | 1996-01-23 | 1997-07-15 | Ocg Microelectronic Materials, Inc. | Photoresist stripping composition |
| US5759973A (en) * | 1996-09-06 | 1998-06-02 | Olin Microelectronic Chemicals, Inc. | Photoresist stripping and cleaning compositions |
| US6030932A (en) | 1996-09-06 | 2000-02-29 | Olin Microelectronic Chemicals | Cleaning composition and method for removing residues |
| US5780406A (en) * | 1996-09-06 | 1998-07-14 | Honda; Kenji | Non-corrosive cleaning composition for removing plasma etching residues |
| US5817610A (en) * | 1996-09-06 | 1998-10-06 | Olin Microelectronic Chemicals, Inc. | Non-corrosive cleaning composition for removing plasma etching residues |
| US6133158A (en) * | 1998-01-27 | 2000-10-17 | Lucent Technologies Inc. | Process for removing alkali metals from solvents used in the manufacture of semiconductor wafers |
| US7135445B2 (en) * | 2001-12-04 | 2006-11-14 | Ekc Technology, Inc. | Process for the use of bis-choline and tris-choline in the cleaning of quartz-coated polysilicon and other materials |
| US6873087B1 (en) * | 1999-10-29 | 2005-03-29 | Board Of Regents, The University Of Texas System | High precision orientation alignment and gap control stages for imprint lithography processes |
| US6413923B2 (en) | 1999-11-15 | 2002-07-02 | Arch Specialty Chemicals, Inc. | Non-corrosive cleaning composition for removing plasma etching residues |
| MY129673A (en) | 2000-03-20 | 2007-04-30 | Avantor Performance Mat Inc | Method and composition for removing sodium-containing material from microcircuit substrates |
| EP2264524A3 (en) * | 2000-07-16 | 2011-11-30 | The Board of Regents of The University of Texas System | High-resolution overlay alignement methods and systems for imprint lithography |
| US6696220B2 (en) * | 2000-10-12 | 2004-02-24 | Board Of Regents, The University Of Texas System | Template for room temperature, low pressure micro-and nano-imprint lithography |
| WO2002006902A2 (en) * | 2000-07-17 | 2002-01-24 | Board Of Regents, The University Of Texas System | Method and system of automatic fluid dispensing for imprint lithography processes |
| KR20030040378A (ko) * | 2000-08-01 | 2003-05-22 | 보드 오브 리전츠, 더 유니버시티 오브 텍사스 시스템 | 임프린트 리소그래피를 위한 투명한 템플릿과 기판사이의고정확성 갭 및 방향설정 감지 방법 |
| WO2002017383A2 (en) * | 2000-08-21 | 2002-02-28 | Board Of Regents, The University Of Texas System | Flexure based translation stage |
| US20050274219A1 (en) * | 2004-06-01 | 2005-12-15 | Molecular Imprints, Inc. | Method and system to control movement of a body for nano-scale manufacturing |
| US6964793B2 (en) * | 2002-05-16 | 2005-11-15 | Board Of Regents, The University Of Texas System | Method for fabricating nanoscale patterns in light curable compositions using an electric field |
| WO2003091376A1 (en) * | 2002-04-24 | 2003-11-06 | Ekc Technology, Inc. | Oxalic acid as a cleaning product for aluminium, copper and dielectric surfaces |
| US7037639B2 (en) * | 2002-05-01 | 2006-05-02 | Molecular Imprints, Inc. | Methods of manufacturing a lithography template |
| US20030235787A1 (en) * | 2002-06-24 | 2003-12-25 | Watts Michael P.C. | Low viscosity high resolution patterning material |
| US6926929B2 (en) | 2002-07-09 | 2005-08-09 | Molecular Imprints, Inc. | System and method for dispensing liquids |
| US6932934B2 (en) | 2002-07-11 | 2005-08-23 | Molecular Imprints, Inc. | Formation of discontinuous films during an imprint lithography process |
| US7077992B2 (en) * | 2002-07-11 | 2006-07-18 | Molecular Imprints, Inc. | Step and repeat imprint lithography processes |
| US6900881B2 (en) | 2002-07-11 | 2005-05-31 | Molecular Imprints, Inc. | Step and repeat imprint lithography systems |
| US6908861B2 (en) * | 2002-07-11 | 2005-06-21 | Molecular Imprints, Inc. | Method for imprint lithography using an electric field |
| US7019819B2 (en) | 2002-11-13 | 2006-03-28 | Molecular Imprints, Inc. | Chucking system for modulating shapes of substrates |
| US7027156B2 (en) | 2002-08-01 | 2006-04-11 | Molecular Imprints, Inc. | Scatterometry alignment for imprint lithography |
| US6916584B2 (en) | 2002-08-01 | 2005-07-12 | Molecular Imprints, Inc. | Alignment methods for imprint lithography |
| US7070405B2 (en) * | 2002-08-01 | 2006-07-04 | Molecular Imprints, Inc. | Alignment systems for imprint lithography |
| US7071088B2 (en) * | 2002-08-23 | 2006-07-04 | Molecular Imprints, Inc. | Method for fabricating bulbous-shaped vias |
| US8349241B2 (en) | 2002-10-04 | 2013-01-08 | Molecular Imprints, Inc. | Method to arrange features on a substrate to replicate features having minimal dimensional variability |
| US6929762B2 (en) | 2002-11-13 | 2005-08-16 | Molecular Imprints, Inc. | Method of reducing pattern distortions during imprint lithography processes |
| US6980282B2 (en) | 2002-12-11 | 2005-12-27 | Molecular Imprints, Inc. | Method for modulating shapes of substrates |
| US6871558B2 (en) * | 2002-12-12 | 2005-03-29 | Molecular Imprints, Inc. | Method for determining characteristics of substrate employing fluid geometries |
| US7452574B2 (en) | 2003-02-27 | 2008-11-18 | Molecular Imprints, Inc. | Method to reduce adhesion between a polymerizable layer and a substrate employing a fluorine-containing layer |
| US7122079B2 (en) | 2004-02-27 | 2006-10-17 | Molecular Imprints, Inc. | Composition for an etching mask comprising a silicon-containing material |
| US7179396B2 (en) * | 2003-03-25 | 2007-02-20 | Molecular Imprints, Inc. | Positive tone bi-layer imprint lithography method |
| US7396475B2 (en) * | 2003-04-25 | 2008-07-08 | Molecular Imprints, Inc. | Method of forming stepped structures employing imprint lithography |
| US7307118B2 (en) * | 2004-11-24 | 2007-12-11 | Molecular Imprints, Inc. | Composition to reduce adhesion between a conformable region and a mold |
| US7157036B2 (en) | 2003-06-17 | 2007-01-02 | Molecular Imprints, Inc | Method to reduce adhesion between a conformable region and a pattern of a mold |
| US7136150B2 (en) | 2003-09-25 | 2006-11-14 | Molecular Imprints, Inc. | Imprint lithography template having opaque alignment marks |
| US7090716B2 (en) * | 2003-10-02 | 2006-08-15 | Molecular Imprints, Inc. | Single phase fluid imprint lithography method |
| US8211214B2 (en) * | 2003-10-02 | 2012-07-03 | Molecular Imprints, Inc. | Single phase fluid imprint lithography method |
| US8076386B2 (en) | 2004-02-23 | 2011-12-13 | Molecular Imprints, Inc. | Materials for imprint lithography |
| US7906180B2 (en) | 2004-02-27 | 2011-03-15 | Molecular Imprints, Inc. | Composition for an etching mask comprising a silicon-containing material |
| US20060062922A1 (en) * | 2004-09-23 | 2006-03-23 | Molecular Imprints, Inc. | Polymerization technique to attenuate oxygen inhibition of solidification of liquids and composition therefor |
| US20060094612A1 (en) * | 2004-11-04 | 2006-05-04 | Mayumi Kimura | Post etch cleaning composition for use with substrates having aluminum |
| US7759407B2 (en) * | 2005-07-22 | 2010-07-20 | Molecular Imprints, Inc. | Composition for adhering materials together |
| US8557351B2 (en) | 2005-07-22 | 2013-10-15 | Molecular Imprints, Inc. | Method for adhering materials together |
| US20080206991A1 (en) * | 2007-02-22 | 2008-08-28 | Nadia Rahhal-Orabi | Methods of forming transistor contacts and via openings |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3562295A (en) * | 1968-12-18 | 1971-02-09 | Du Pont | Macrocyclic polyether compounds and ionic complexes thereof |
| US3813309A (en) * | 1969-12-23 | 1974-05-28 | Ibm | Method for stripping resists from substrates |
| US3871929A (en) * | 1974-01-30 | 1975-03-18 | Allied Chem | Polymeric etch resist strippers and method of using same |
| US3997562A (en) * | 1974-10-01 | 1976-12-14 | E. I. Du Pont De Nemours And Company | Macrocyclic polyether/nitrile complexes |
| US4403029A (en) * | 1982-09-02 | 1983-09-06 | J. T. Baker Chemical Company | Stripping compositions and methods of stripping resists |
| EP0367074A3 (en) * | 1988-10-31 | 1991-06-12 | LeaRonal, Inc. | Preparing printed circuit boards for electroplating |
| DE69333877T2 (de) * | 1992-07-09 | 2006-06-14 | Ekc Technology Inc | Reinigungsmittelzusammensetzung, das einem Redox Aminverbindung enthält |
-
1994
- 1994-03-18 US US08/210,193 patent/US5417802A/en not_active Expired - Lifetime
-
1995
- 1995-03-15 TW TW084102548A patent/TW295694B/zh not_active IP Right Cessation
- 1995-03-16 DE DE69518682T patent/DE69518682T2/de not_active Expired - Fee Related
- 1995-03-16 ES ES95301748T patent/ES2150528T3/es not_active Expired - Lifetime
- 1995-03-16 EP EP95301748A patent/EP0674231B1/en not_active Expired - Lifetime
- 1995-03-17 JP JP7057836A patent/JPH07273074A/ja active Pending
- 1995-03-17 SG SG1995000121A patent/SG24106A1/en unknown
- 1995-03-18 KR KR1019950005686A patent/KR950034566A/ko not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| EP0674231A1 (en) | 1995-09-27 |
| ES2150528T3 (es) | 2000-12-01 |
| DE69518682D1 (de) | 2000-10-12 |
| KR950034566A (ko) | 1995-12-28 |
| TW295694B (enExample) | 1997-01-11 |
| US5417802A (en) | 1995-05-23 |
| SG24106A1 (en) | 1996-02-10 |
| EP0674231B1 (en) | 2000-09-06 |
| JPH07273074A (ja) | 1995-10-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |