DE69516000T2 - Verfahren zur beseitigung von zyklusinduzierten eingefangenen elektroden im tunneloxid von flash-eeproms mit nur 5-volt-spannung - Google Patents

Verfahren zur beseitigung von zyklusinduzierten eingefangenen elektroden im tunneloxid von flash-eeproms mit nur 5-volt-spannung

Info

Publication number
DE69516000T2
DE69516000T2 DE69516000T DE69516000T DE69516000T2 DE 69516000 T2 DE69516000 T2 DE 69516000T2 DE 69516000 T DE69516000 T DE 69516000T DE 69516000 T DE69516000 T DE 69516000T DE 69516000 T2 DE69516000 T2 DE 69516000T2
Authority
DE
Germany
Prior art keywords
tunnel oxide
volt voltage
flash eeproms
induced electrodes
eliminating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69516000T
Other languages
English (en)
Other versions
DE69516000D1 (de
Inventor
Yuan Tang
Chi Chang
Buskirk A Van
K Chang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Micro Devices Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Application granted granted Critical
Publication of DE69516000D1 publication Critical patent/DE69516000D1/de
Publication of DE69516000T2 publication Critical patent/DE69516000T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
DE69516000T 1994-10-11 1995-09-29 Verfahren zur beseitigung von zyklusinduzierten eingefangenen elektroden im tunneloxid von flash-eeproms mit nur 5-volt-spannung Expired - Fee Related DE69516000T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/320,368 US5485423A (en) 1994-10-11 1994-10-11 Method for eliminating of cycling-induced electron trapping in the tunneling oxide of 5 volt only flash EEPROMS
PCT/US1995/013012 WO1996011475A1 (en) 1994-10-11 1995-09-29 Method for eliminating of cycling-induced electron trapping in the tunneling oxide of 5 volt only flash eeproms

Publications (2)

Publication Number Publication Date
DE69516000D1 DE69516000D1 (de) 2000-05-04
DE69516000T2 true DE69516000T2 (de) 2000-11-09

Family

ID=23246105

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69516000T Expired - Fee Related DE69516000T2 (de) 1994-10-11 1995-09-29 Verfahren zur beseitigung von zyklusinduzierten eingefangenen elektroden im tunneloxid von flash-eeproms mit nur 5-volt-spannung

Country Status (5)

Country Link
US (1) US5485423A (de)
EP (1) EP0761004B1 (de)
DE (1) DE69516000T2 (de)
TW (1) TW288208B (de)
WO (1) WO1996011475A1 (de)

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Publication number Priority date Publication date Assignee Title
US5694356A (en) * 1994-11-02 1997-12-02 Invoice Technology, Inc. High resolution analog storage EPROM and flash EPROM
US5629893A (en) * 1995-05-12 1997-05-13 Advanced Micro Devices, Inc. System for constant field erasure in a flash EPROM
DE69521203T2 (de) * 1995-07-31 2006-01-12 Stmicroelectronics S.R.L., Agrate Brianza Flash-EEPROM mit gesteuerter Entladungszeit der Wortleitungs- und Sourcespannungen nach der Löschung
US5848000A (en) * 1996-03-29 1998-12-08 Aplus Flash Technology, Inc. Flash memory address decoder with novel latch structure
US5699298A (en) * 1996-05-22 1997-12-16 Macronix International Co., Ltd. Flash memory erase with controlled band-to-band tunneling current
WO1997044791A1 (en) * 1996-05-22 1997-11-27 Macronix International Co., Ltd. Flash memory erase with controlled band-to-band tunneling current
JPH09320287A (ja) * 1996-05-24 1997-12-12 Nec Corp 不揮発性半導体記憶装置
US5917757A (en) * 1996-08-01 1999-06-29 Aplus Flash Technology, Inc. Flash memory with high speed erasing structure using thin oxide semiconductor devices
US5914896A (en) * 1996-08-01 1999-06-22 Aplus Flash Technology, Inc. Flash memory with high speed erasing structure using thin oxide and thick oxide semiconductor devices
US6381670B1 (en) * 1997-01-07 2002-04-30 Aplus Flash Technology, Inc. Flash memory array having maximum and minimum threshold voltage detection for eliminating over-erasure problem and enhancing write operation
JP3211868B2 (ja) * 1996-12-10 2001-09-25 日本電気株式会社 不揮発性半導体メモリの消去方法及び消去装置
JP3211869B2 (ja) * 1996-12-10 2001-09-25 日本電気株式会社 不揮発性半導体メモリの消去方法及び消去装置
US5726933A (en) * 1997-05-15 1998-03-10 Taiwan Semiconductor Manufacturing Company, Ltd. Clipped sine shaped waveform to reduce the cycling-induced electron trapping in the tunneling oxide of flash EEPROM
US5862078A (en) * 1997-08-11 1999-01-19 Taiwan Semiconductor Manufacturing Company, Ltd. Mixed mode erase method to improve flash eeprom write/erase threshold closure
US5838618A (en) * 1997-09-11 1998-11-17 Taiwan Semiconductor Manufacturing Company Ltd. Bi-modal erase method for eliminating cycling-induced flash EEPROM cell write/erase threshold closure
US5903499A (en) * 1997-09-12 1999-05-11 Taiwan Semiconductor Manufacturing Company, Ltd. Method to erase a flash EEPROM using negative gate source erase followed by a high negative gate erase
US5949717A (en) * 1997-09-12 1999-09-07 Taiwan Semiconductor Manufacturing Company, Ltd. Method to improve flash EEPROM cell write/erase threshold voltage closure
US5828605A (en) * 1997-10-14 1998-10-27 Taiwan Semiconductor Manufacturing Company Ltd. Snapback reduces the electron and hole trapping in the tunneling oxide of flash EEPROM
US6303454B1 (en) 1998-02-02 2001-10-16 Taiwan Semiconductor Manufacturing Company Process for a snap-back flash EEPROM cell
US6005809A (en) * 1998-06-19 1999-12-21 Taiwan Semiconductor Manufacturing Company, Ltd. Program and erase method for a split gate flash EEPROM
US6185133B1 (en) * 1998-06-26 2001-02-06 Amic Technology, Inc. Flash EPROM using junction hot hole injection for erase
US6049484A (en) * 1998-09-10 2000-04-11 Taiwan Semiconductor Manufacturing Company Erase method to improve flash EEPROM endurance by combining high voltage source erase and negative gate erase
US6256755B1 (en) 1998-10-19 2001-07-03 International Business Machines Corporation Apparatus and method for detecting defective NVRAM cells
US6040996A (en) * 1998-11-16 2000-03-21 Chartered Semiconductor Manufacturing, Ltd. Constant current programming waveforms for non-volatile memories
US6049486A (en) * 1999-01-04 2000-04-11 Taiwan Semiconductor Manufacturing Company Triple mode erase scheme for improving flash EEPROM cell threshold voltage (VT) cycling closure effect
US6134150A (en) * 1999-07-23 2000-10-17 Aplus Flash Technology, Inc. Erase condition for flash memory
DE19941684B4 (de) * 1999-09-01 2004-08-26 Infineon Technologies Ag Halbleiterbauelement als Verzögerungselement
IT1308855B1 (it) * 1999-10-29 2002-01-11 St Microelectronics Srl Metodo di riprogrammazione controllata per celle di memoria nonvolatile,in particolare di tipo flash eeprom ed eprom.
US6518122B1 (en) * 1999-12-17 2003-02-11 Chartered Semiconductor Manufacturing Ltd. Low voltage programmable and erasable flash EEPROM
CN1411602A (zh) * 1999-12-17 2003-04-16 先进微装置公司 于eeprom擦除期间可增进可靠度的减少定电场的方法
US6266281B1 (en) 2000-02-16 2001-07-24 Advanced Micro Devices, Inc. Method of erasing non-volatile memory cells
US20020123180A1 (en) * 2001-03-01 2002-09-05 Peter Rabkin Transistor and memory cell with ultra-short gate feature and method of fabricating the same
US6614693B1 (en) 2002-03-19 2003-09-02 Taiwan Semiconductor Manufacturing Company Combination erase waveform to reduce oxide trapping centers generation rate of flash EEPROM
US6795348B2 (en) * 2002-05-29 2004-09-21 Micron Technology, Inc. Method and apparatus for erasing flash memory
TWI301604B (en) * 2005-05-24 2008-10-01 Au Optronics Corp Method for driving an active display
US7512008B2 (en) * 2005-11-30 2009-03-31 Atmel Corporation Circuit to control voltage ramp rate

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Publication number Priority date Publication date Assignee Title
US4434478A (en) * 1981-11-27 1984-02-28 International Business Machines Corporation Programming floating gate devices
US5315547A (en) * 1988-07-11 1994-05-24 Hitachi, Ltd. Nonvolatile semiconductor memory device with selective tow erasure
US5042009A (en) * 1988-12-09 1991-08-20 Waferscale Integration, Inc. Method for programming a floating gate memory device
US5168174A (en) * 1991-07-12 1992-12-01 Texas Instruments Incorporated Negative-voltage charge pump with feedback control

Also Published As

Publication number Publication date
EP0761004A1 (de) 1997-03-12
WO1996011475A1 (en) 1996-04-18
EP0761004B1 (de) 2000-03-29
US5485423A (en) 1996-01-16
DE69516000D1 (de) 2000-05-04
TW288208B (de) 1996-10-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee