DE69514858D1 - Dünnschicht-Struktur mit leitfähiger Molybdän-Chrom Verdrahtung - Google Patents

Dünnschicht-Struktur mit leitfähiger Molybdän-Chrom Verdrahtung

Info

Publication number
DE69514858D1
DE69514858D1 DE69514858T DE69514858T DE69514858D1 DE 69514858 D1 DE69514858 D1 DE 69514858D1 DE 69514858 T DE69514858 T DE 69514858T DE 69514858 T DE69514858 T DE 69514858T DE 69514858 D1 DE69514858 D1 DE 69514858D1
Authority
DE
Germany
Prior art keywords
thin
film structure
conductive molybdenum
chrome wiring
chrome
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69514858T
Other languages
English (en)
Other versions
DE69514858T2 (de
Inventor
Jackson H Ho
Robert Allen
Tzu-Chin Chuang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xerox Corp
Original Assignee
Xerox Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xerox Corp filed Critical Xerox Corp
Application granted granted Critical
Publication of DE69514858D1 publication Critical patent/DE69514858D1/de
Publication of DE69514858T2 publication Critical patent/DE69514858T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53257—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being a refractory metal
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/136295—Materials; Compositions; Manufacture processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electrodes Of Semiconductors (AREA)
DE69514858T 1994-04-28 1995-04-13 Dünnschicht-Struktur mit leitfähiger Molybdän-Chrom Verdrahtung Expired - Lifetime DE69514858T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/235,008 US5693983A (en) 1994-04-28 1994-04-28 Thin-film structure with conductive molybdenum-chromium line

Publications (2)

Publication Number Publication Date
DE69514858D1 true DE69514858D1 (de) 2000-03-09
DE69514858T2 DE69514858T2 (de) 2000-06-29

Family

ID=22883674

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69514858T Expired - Lifetime DE69514858T2 (de) 1994-04-28 1995-04-13 Dünnschicht-Struktur mit leitfähiger Molybdän-Chrom Verdrahtung

Country Status (4)

Country Link
US (1) US5693983A (de)
EP (1) EP0680088B1 (de)
JP (1) JPH07301822A (de)
DE (1) DE69514858T2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2985124B2 (ja) * 1997-06-12 1999-11-29 株式会社日立製作所 液晶表示装置
TW336351B (en) * 1997-10-08 1998-07-11 Winbond Electronics Corp Metal wire structure and process for producing the same
KR100356452B1 (ko) 1998-10-02 2002-10-18 가부시키가이샤 히타치세이사쿠쇼 액정 표시 장치 및 그 제조 방법
JP3567142B2 (ja) 2000-05-25 2004-09-22 シャープ株式会社 金属配線およびそれを用いたアクティブマトリクス基板
US11908782B2 (en) 2021-03-22 2024-02-20 Xerox Corporation Spacers formed on a substrate with etched micro-springs
US11527420B2 (en) * 2021-03-22 2022-12-13 Palo Alto Research Center Incorporated Micro-fabricated, stress-engineered members formed on passivation layer of integrated circuit

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62229873A (ja) * 1986-03-29 1987-10-08 Hitachi Ltd 薄膜半導体装置の製造方法
US4782380A (en) * 1987-01-22 1988-11-01 Advanced Micro Devices, Inc. Multilayer interconnection for integrated circuit structure having two or more conductive metal layers
US5007984A (en) * 1987-09-28 1991-04-16 Mitsubishi Denki Kabushiki Kaisha Method for etching chromium film formed on substrate
JPH01209764A (ja) * 1988-02-18 1989-08-23 Stanley Electric Co Ltd 薄膜トランジスタとその製法
DE3914602A1 (de) * 1989-05-03 1990-11-08 Bosch Gmbh Robert Verfahren zum erzeugen von kontaktloechern in isolationsschichten
KR940005124B1 (ko) * 1989-10-04 1994-06-11 호시덴 가부시기가이샤 액정표시소자
EP0438138B1 (de) * 1990-01-17 1995-03-15 Kabushiki Kaisha Toshiba Flüssigkristall-Anzeigevorrichtung mit aktiver Matrix
JPH03248568A (ja) * 1990-02-27 1991-11-06 Fuji Xerox Co Ltd 薄膜半導体装置
US5010027A (en) * 1990-03-21 1991-04-23 General Electric Company Method for fabricating a self-aligned thin-film transistor utilizing planarization and back-side photoresist exposure
JPH0421823A (ja) * 1990-05-16 1992-01-24 Hosiden Corp 液晶表示素子の点欠陥の黒欠陥化法及び液晶表示素子
US5162933A (en) * 1990-05-16 1992-11-10 Nippon Telegraph And Telephone Corporation Active matrix structure for liquid crystal display elements wherein each of the gate/data lines includes at least a molybdenum-base alloy layer containing 0.5 to 10 wt. % of chromium
US5198694A (en) * 1990-10-05 1993-03-30 General Electric Company Thin film transistor structure with improved source/drain contacts
US5132745A (en) * 1990-10-05 1992-07-21 General Electric Company Thin film transistor having an improved gate structure and gate coverage by the gate dielectric
US5162931A (en) * 1990-11-06 1992-11-10 Honeywell, Inc. Method of manufacturing flat panel backplanes including redundant gate lines and displays made thereby
JP2766563B2 (ja) * 1991-03-27 1998-06-18 シャープ株式会社 液晶表示装置
JP2871235B2 (ja) * 1991-10-29 1999-03-17 ホシデン・フィリップス・ディスプレイ株式会社 能動液晶表示装置
US5241192A (en) * 1992-04-02 1993-08-31 General Electric Company Fabrication method for a self-aligned thin film transistor having reduced end leakage and device formed thereby
US5528082A (en) * 1994-04-28 1996-06-18 Xerox Corporation Thin-film structure with tapered feature
US5486939A (en) * 1994-04-28 1996-01-23 Xerox Corporation Thin-film structure with insulating and smoothing layers between crossing conductive lines
US5491347A (en) * 1994-04-28 1996-02-13 Xerox Corporation Thin-film structure with dense array of binary control units for presenting images
US5518805A (en) * 1994-04-28 1996-05-21 Xerox Corporation Hillock-free multilayer metal lines for high performance thin film structures

Also Published As

Publication number Publication date
EP0680088A1 (de) 1995-11-02
US5693983A (en) 1997-12-02
DE69514858T2 (de) 2000-06-29
EP0680088B1 (de) 2000-02-02
JPH07301822A (ja) 1995-11-14

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Legal Events

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