DE69508735T2 - Vor Überströmen geschützter Leistungsschalter - Google Patents

Vor Überströmen geschützter Leistungsschalter

Info

Publication number
DE69508735T2
DE69508735T2 DE69508735T DE69508735T DE69508735T2 DE 69508735 T2 DE69508735 T2 DE 69508735T2 DE 69508735 T DE69508735 T DE 69508735T DE 69508735 T DE69508735 T DE 69508735T DE 69508735 T2 DE69508735 T2 DE 69508735T2
Authority
DE
Germany
Prior art keywords
protected against
circuit breakers
against overcurrents
overcurrents
breakers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69508735T
Other languages
English (en)
Other versions
DE69508735D1 (de
Inventor
Edward Eilley
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB9420576A external-priority patent/GB9420576D0/en
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of DE69508735D1 publication Critical patent/DE69508735D1/de
Application granted granted Critical
Publication of DE69508735T2 publication Critical patent/DE69508735T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE69508735T 1994-10-12 1995-09-08 Vor Überströmen geschützter Leistungsschalter Expired - Fee Related DE69508735T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB9420576A GB9420576D0 (en) 1994-10-12 1994-10-12 A protected switch
GB9423076A GB9423076D0 (en) 1994-10-12 1994-11-16 A protected switch
PCT/IB1995/000743 WO1996012347A2 (en) 1994-10-12 1995-09-08 A protected switch

Publications (2)

Publication Number Publication Date
DE69508735D1 DE69508735D1 (de) 1999-05-06
DE69508735T2 true DE69508735T2 (de) 1999-10-07

Family

ID=26305783

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69508735T Expired - Fee Related DE69508735T2 (de) 1994-10-12 1995-09-08 Vor Überströmen geschützter Leistungsschalter

Country Status (6)

Country Link
US (1) US5650737A (de)
EP (1) EP0733284B1 (de)
JP (1) JPH09507370A (de)
DE (1) DE69508735T2 (de)
GB (1) GB9423076D0 (de)
WO (1) WO1996012347A2 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3746604B2 (ja) * 1997-12-09 2006-02-15 株式会社ルネサステクノロジ 半導体装置およびその製造方法
EP0743752B1 (de) * 1995-05-17 2004-07-28 STMicroelectronics S.r.l. Laden eines Bootstrap-Kondensators mittels eines lateralen DMOS-Transistors
US5796278A (en) * 1996-04-26 1998-08-18 Delco Electronics Corporaiton Circuitry for controlling load current
EP0814564A1 (de) * 1996-06-20 1997-12-29 ANSALDO INDUSTRIA S.p.A. Elektronischer Schaltkreis mit reduzierten Schalttransienten
DE19644193C2 (de) * 1996-10-24 2001-04-19 Bosch Gmbh Robert Integrierte Überlastschutzeinrichtung mit Temperatursensor
EP0887932A1 (de) * 1997-06-24 1998-12-30 STMicroelectronics S.r.l. Steuerung der Körperspannung eines Hochspannungs-LDMOS-Transistors
US6198351B1 (en) * 1999-05-10 2001-03-06 Tyco Electronics Logistics Ag Power sensing apparatus for power amplifiers
JP2001274402A (ja) 2000-03-24 2001-10-05 Toshiba Corp パワー半導体装置
JP3444263B2 (ja) * 2000-03-30 2003-09-08 株式会社日立製作所 制御回路内蔵絶縁ゲート半導体装置
US6384636B1 (en) * 2000-11-14 2002-05-07 Maxim Integrated Products, Inc. Fast and precise current-sense circuit for high-voltage switch
US6489834B2 (en) * 2001-03-16 2002-12-03 Hewlett-Packard Company System and method utilizing on-chip voltage monitoring to manage power consumption
US6459321B1 (en) * 2001-06-28 2002-10-01 Linear Technology Corporation Gate protection clamping circuits and techniques with controlled output discharge current
US6927605B2 (en) * 2003-11-07 2005-08-09 Hewlett-Packard Development Company, L.P. System and method for dynamically varying a clock signal
JP4401178B2 (ja) 2004-01-27 2010-01-20 Ｎｅｃエレクトロニクス株式会社 出力トランジスタの電流制限回路
JP4807768B2 (ja) * 2004-06-23 2011-11-02 ルネサスエレクトロニクス株式会社 パワートランジスタ装置及びそれを用いたパワー制御システム
TW201013925A (en) * 2008-09-17 2010-04-01 Grand Gem Semiconductor Co Ltd MOS transistor having reverse current limiting and a voltage converter applied with the MOS transistor
JP5266084B2 (ja) * 2009-02-17 2013-08-21 ルネサスエレクトロニクス株式会社 過電流保護回路
US8985850B1 (en) * 2009-10-30 2015-03-24 Cypress Semiconductor Corporation Adaptive gate driver strength control
JP2011174712A (ja) * 2010-02-23 2011-09-08 On Semiconductor Trading Ltd 電流検出回路及び半導体集積回路
JP5367651B2 (ja) * 2010-06-28 2013-12-11 日立オートモティブシステムズ株式会社 電流制御用半導体素子、およびそれを用いた制御装置
JP5901570B2 (ja) * 2013-05-08 2016-04-13 本田技研工業株式会社 電流印加方法および電流印加装置
US9969030B2 (en) 2016-05-12 2018-05-15 Pacesetter, Inc. Laser drilling of metal foils for assembly in an electrolytic capacitor
GB2618579A (en) * 2022-05-11 2023-11-15 Dyson Technology Ltd Circuit for limiting current through a conductor

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4136354A (en) * 1977-09-15 1979-01-23 National Semiconductor Corporation Power transistor including a sense emitter and a reference emitter for enabling power dissipation to be limited to less than a destructive level
US4577125A (en) * 1983-12-22 1986-03-18 Advanced Micro Devices, Inc. Output voltage driver with transient active pull-down
US4893158A (en) * 1987-06-22 1990-01-09 Nissan Motor Co., Ltd. MOSFET device
JPH07113861B2 (ja) * 1988-01-29 1995-12-06 株式会社日立製作所 半導体素子の状態検出及び保護回路とそれを用いたインバータ回路
JPH02266712A (ja) * 1989-04-07 1990-10-31 Fuji Electric Co Ltd 半導体装置
US5061863A (en) * 1989-05-16 1991-10-29 Kabushiki Kaisha Toyoda Jidoshokki Seisakusho Transistor provided with a current detecting function
DE68921004T2 (de) * 1989-11-17 1995-09-21 Sgs Thomson Microelectronics Schutzvorrichtung gegen den Kurzschluss eines MOS-Leistungsbauelementes mit einer vorherbestimmten Abhängigkeit von der Temperatur, bei welcher das Bauelement arbeitet.
US5159516A (en) * 1991-03-14 1992-10-27 Fuji Electric Co., Ltd. Overcurrent-detection circuit
DE4121176A1 (de) * 1991-06-22 1992-12-24 Halbleiterwerk Frankfurt Gmbh Schaltbare ausraeumschaltung
US5500619A (en) * 1992-03-18 1996-03-19 Fuji Electric Co., Ltd. Semiconductor device
JP3084982B2 (ja) * 1992-11-25 2000-09-04 富士電機株式会社 半導体装置
US5272392A (en) * 1992-12-04 1993-12-21 North American Philips Corporation Current limited power semiconductor device

Also Published As

Publication number Publication date
JPH09507370A (ja) 1997-07-22
WO1996012347A3 (en) 1996-07-04
EP0733284B1 (de) 1999-03-31
EP0733284A1 (de) 1996-09-25
GB9423076D0 (en) 1995-01-04
WO1996012347A2 (en) 1996-04-25
US5650737A (en) 1997-07-22
DE69508735D1 (de) 1999-05-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee